The invention relates to a thin-film magnetoresistive sensor element. The thin-film magnetoresistive sensor element comprises a lower electrode, a seed layer, an anti-ferromagnetic pinning layer, magnetic nail-pinning layer structure, a non-magnetic isolation layer, a magnetic free layer, a protecting layer, an upper electrode and a magnetic biasing layer. The invention also relates to a bridge for the thin-film magnetoresistive sensor. The thin-film magnetoresistive sensor element and the bridge thereof disclosed by the invention have the characteristics of small magnetic retardation, high precision and linearity, adjustable linear range, simple process, high response frequency, low cost, strong anti-jamming property and favorable temperature characteristic.