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Single chip difference free layer push-pull type magnetic field sensor electric bridge and preparation method thereof

一种磁场传感器、推挽式的技术,应用在磁性传感器领域,能够解决影响两轴或三轴传感器测量精度、增加工艺复杂性、影响传感器测量精度等问题

Active Publication Date: 2015-01-14
MULTIDIMENSION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1) When the X and Y axis magnetoresistive sensors are prepared on the same plane at the same time, since the X and Y axis magnetoresistance sensors are discrete components, integrated manufacturing cannot be realized, which increases the complexity of the process and affects the two-axis or three-axis Measuring Accuracy of Shaft Sensors
[0005] 2) The push arm and wrist arm cannot realize the integrated manufacturing process, and the process of connecting discrete slices with flying wires also increases the complexity of the process and affects the measurement accuracy of the sensor

Method used

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  • Single chip difference free layer push-pull type magnetic field sensor electric bridge and preparation method thereof
  • Single chip difference free layer push-pull type magnetic field sensor electric bridge and preparation method thereof
  • Single chip difference free layer push-pull type magnetic field sensor electric bridge and preparation method thereof

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Embodiment 1

[0090] figure 1 It is a full-bridge structure diagram of a push-pull magnetoresistive sensor, including four bridge arms R1, R2, R3 and R4, where R1 and R4 are push arms, and R2 and R3 are pull arms. For magnetoresistive sensors, push arms and pull arms Under the action of the external magnetic field, the arms have the characteristics of opposite magnetic field changes. For the GMR spin valve and TMR type magnetoresistive sensing units, it means that the angle between the magnetization directions of the free layer and the pinned layer increases (decreases) and decreases respectively. Small (increased), and the magnitude of the change is the same.

[0091] Figure 2a , 2b are the two possible cases of the magnetization state in a push-pull magnetoresistive sensor of GMR spin valve or TMR type, Figure 2b In the case of flipping the pinned layer, the magnetization direction of the pinned layer in the push arm magnetoresistive sensing unit and the pull arm magnetoresistive sen...

Embodiment 2

[0094] image 3 The invention proposes to use a soft magnetic flux concentrator to transform the same Y-direction measurement external magnetic field H into a magnetic field distribution with opposite two X-component magnetic fields and the position diagram of the corresponding push magneto-resistance sensing unit and pull magneto-resistance sensing unit. Among them, the soft magnetic flux concentrator 1 has sides parallel to the X and Y axes, and has four corners, which are marked as A, B, C and D in a clockwise direction from the upper left, and the Y outward magnetic field H passes through the flux concentrator After 1, the magnetic field is distorted near the flux concentrator 1, and in addition to the Y magnetic field component, an X magnetic field component also appears, where the magnetic field near angular position D and angular position B has a positive X magnetic field component at angular position A and the magnetic field near the angular position C has a negative X...

Embodiment 3

[0098] Figure 4 with Figure 5For the structural diagram of the single-chip differential free layer push-pull magnetoresistive sensor proposed by the present invention and its measurement principle diagram to the external magnetic field in the X and Y directions, including the substrate positioned on the X-Y plane, the first and 12 are composed of 11 That is, the second two soft magnetic flux concentrator arrays are staggered to form a soft magnetic flux concentrator array, and a magnetoresistive sensor array 35 composed of a push magnetoresistance sensing unit and a pull magnetoresistance sensing unit. The row direction of the soft magnetic flux concentrator array is parallel to the X axis, and the column direction is parallel to the Y axis. The gap in the Y direction is ygap, and the gaps in the X direction are xgap and rgap, that is, along the positive X direction, the first soft magnetic flux concentrator The X-direction gap between the first column and the first column ...

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Abstract

The invention provides a single chip difference free layer push-pull type magnetic field sensor electric bridge and a preparation method thereof. The magnetic field sensor electric bridge comprises a substrate, a staggered soft magnetic flux concentrator array and a GMR spin valve or a TMR magnetic resistor sensor unit array which is placed on the substrate and has an X-direction magnetic sensitive direction. Each soft magnetic flux concentrator comprises edges parallel to the X axis, edges parallel to the Y axis and four corners, and the four corners are sequentially marked as A, B, C and D from the upper left position in the clockwise direction. Magnetic resistor sensor units are placed at the gaps between the soft magnetic flux concentrators. Meanwhile, the magnetic resistor sensor units corresponding to the corners A and the corners C of the soft magnetic flux concentrators and the magnetic resistor sensor units corresponding to the corners B and the corners D are defined as push magnetic resistor sensor units and pull magnetic resistor sensor units respectively. The push magnetic resistor sensor units are electrically connected to form one or more push arms, the pull magnetic sensor units are electrically connected to form one or more pull arms, and the push arms and the pull arms are electrically connected to form a push-pull type sensor bridge. According to the single chip difference free layer push-pull type magnetic field sensor electric bridge and the preparation method therefore, the power consumption is low, the magnetic field sensitivity is high, and a magnetic field in the Y direction can be measured.

Description

technical field [0001] The invention relates to the field of magnetic sensors, in particular to a single-chip differential free layer push-pull magnetic field sensor bridge and a preparation method. Background technique [0002] In the design process of two-axis and three-axis magnetic compass chips, X-axis and Y-axis magnetic sensors need to be used at the same time. For magnetoresistive type sensing units, they generally have a single sensitive magnetic field direction, for example, they are sensitive to magnetic fields in the X direction. For the acquisition of magnetic field sensitivity in the Y direction, the magnetic field sensitive sensing unit in the X direction is generally rotated by 90 degrees to obtain the magnetic field sensitive unit in the Y direction. A pull bridge in which the push arm and the wrist arm are manufactured separately, that is, one of them is rotated 180 degrees relative to the other, so that the push arm and the wrist arm have opposite pinned l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/09G01R17/00G01R3/00G01C17/28
CPCG01R33/09G01R3/00G01R33/093G01R33/098G01R33/0017G01R33/0011G01R17/00G01C17/28
Inventor 詹姆斯·G·迪克周志敏
Owner MULTIDIMENSION TECH CO LTD
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