The present application relates to a method and device for removing particles from an
ion beam
etching system, which comprises a
metal grid added to the bottom of the
reaction chamber of the
ion beam
etching system, the grid being connected to a DC power supply to generate a positive
voltage, the
voltage value of the applied positive
voltage being adjusted within 100kv according to the size of the particles to be removed. The material of the
metal grid c is a
hard metal such as
molybdenum or
nickel, and the mesh size is less than 5mm. After the
etching process is completed, the
ion source of the
ion beam etching
system is disconnected, and the lower
electrode is rotated to be perpendicular to the grid c; the neutralizer is turned on to generate a large number of electrons attached to the particles to be removed to make the particles negatively charged; the grid c applies a positive voltage through the DC power supply c, and the negatively charged particles move towards the grid c under the action of the
electric field; the particles pass through the mesh of the grid c and are pumped out of the chamber by the molecular pump, so that the particles are quickly and effectively removed, the deposition of particles in the interior of the
reaction chamber is prevented, and the production efficiency of the
ion beam etching system is improved.