This invention relates to substrate supports, e.g., coated electrostatic chucks, having a
dielectric multilayer formed thereon;
dielectric multilayers that provide erosive and corrosive barrier protection in harsh environments such as
plasma treating vessels used in
semiconductor device manufacture; process chambers, e.g., deposition chambers, for
processing substrates; methods for protecting substrate supports; and methods for producing substrate supports and electronic devices. The
dielectric multilayer comprises (a) an undercoat
dielectric layer comprising a
metal oxide or
metal nitride formed on a surface; and (b) a topcoat
dielectric layer comprising a
metal oxide formed on the undercoat
dielectric layer. The topcoat dielectric layer has an aluminum
oxide content of less than about 1 weight percent. The topcoat dielectric layer has a
corrosion resistance and / or
plasma erosion resistance greater than the
corrosion resistance and / or
plasma erosion resistance of the undercoat dielectric layer. The undercoat dielectric layer can have a resistivity greater than the resistivity of the topcoat dielectric layer. The topcoat dielectric layer can have a dielectric constant greater than the dielectric constant of the undercoat dielectric layer. The undercoat dielectric layer can have a
porosity greater than the
porosity of the topcoat dielectric layer. The invention is useful, for example, in the manufacture and protection of electrostatic chucks used in
semiconductor device manufacture.