Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Hdd pattern implant system

A substrate, processing chamber technology, applied in the field of hard disk drive media

Inactive Publication Date: 2012-01-25
APPLIED MATERIALS INC
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the read / write head of a typical hard drive can fly as close to 2nm off the surface of the disk, these topographical changes can become limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hdd pattern implant system
  • Hdd pattern implant system
  • Hdd pattern implant system

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0121] Example 1 - Helium Injection

[0122] The glass substrate was sputtered with a soft magnetic layer of Fe-Ni alloy to a thickness of about 100 nm. The cobalt-chromium-platinum alloy magnetic film layer is sputtered on the iron-nickel alloy soft magnetic layer to a thickness of about 20nm. Samples prepared as described above were subjected to a plasma containing helium ions by providing helium gas into the processing chamber. The process chamber pressure was about 15 mTorr, the RF bias was about 2 kV, the power supply was about 500 W, helium was provided at a flow rate of about 300 sccm and the injection time was about 25 seconds. Helium ions were found to penetrate resist layers up to a thickness of about 85 nm. Implantation of helium ions in this manner reduces the saturation magnetic flux density of the exposed portion from 1.36 Tesla (T) to 0.1T. Although not used in this example, a second gas may be provided along with helium to aid in plasma formation. For examp...

example 2

[0124] Example 2 - Boron Implantation

[0125] A sample similar to that used in Example 1 was subjected to boron ion implantation. By providing BF to the processing chamber containing the sample 3 gas to subject samples prepared as described above to a plasma containing boron ions. The process chamber pressure was maintained at about 15 mTorr, the RF bias was about 9 kV, the power supply was about 500 W, and the BF was delivered at a flow rate of about 300 sccm 3 gas and the injection time is about 20 seconds. Boron ions were found to penetrate the resist layer up to a thickness of about 65 nm, and further penetrate the magnetic layer at a constant concentration up to a depth of about 10 nm, decreasing thereafter. As in Example 1, argon may also be used in this example to supplement plasma formation. The implanted boron ions reduced the saturation flux density of the sample from about 1.36 T to about 0.5 T, a reduction of more than 50%.

[0126] It is evident from the abo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Sizeaaaaaaaaaa
Login to View More

Abstract

Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

Description

technical field [0001] Embodiments of the invention relate to hard disk drive media and apparatus and methods for manufacturing hard disk drive media. More specifically, embodiments of the invention relate to methods and apparatus for forming patterned magnetic media for hard disk drives. Background technique [0002] Hard drives are the storage medium of choice for computers and related devices. Hard drives are found in most desktop and laptop computers, and may also be found in several consumer electronics devices, such as media recorders and players, and instruments for collecting and recording data. Hard drives are also deployed in arrays for network storage. [0003] Hard drives store information magnetically. The magnetic disks in a hard disk drive are configured with magnetic domains that are individually addressable by magnetic heads. The magnetic head moves close to the magnetic domains and changes the magnetic properties of the magnetic domains to record inform...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11B5/73G11B5/82G11B5/84
CPCG11B5/82G11B5/855C23C14/48C23C14/50C23C16/00C23F1/00G11B5/84H01L21/673H01L21/677H01L21/687
Inventor M・A・孚德J・纽曼J・A・马林D・J・霍夫曼S・莫法特S・文哈弗贝克
Owner APPLIED MATERIALS INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com