72 results about "Helium ions" patented technology

One ECR ion source generates a He < 2 + > ion beam, the other ECR ion source generates a H2 < + > ion beam, the He < 2 + > or H2 < + > ion beam is selected by a deflection magnet and then transmitted and focused by LEBT to enter an RFQ, the focusing factor of the RFQ is increased and then reduced, DTL is IH-DTL designed by adopting KONUS beam dynamics and comprises two KONUS periods, the working frequencies of the RFQ and the DTL are respectively 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, after He < 2 + > or H2 < + > ion beams are accelerated by RFQ and DTL, the MEBT distributes and transmits the ion beams to a downstream accelerator and an isotope production device. According to the proton helium ion implanter provided by the invention, the particle beam can meet the injection requirement of a subsequent synchrotron, the miniaturization of the proton helium ion implanter is realized, and the production of medical isotopes is considered.

The invention discloses simulated lunar soil for engineering and a preparation process thereof, the simulated lunar soil has a multilayer structure design, and comprises a basic mineral structure layer, a surface activity control layer and a simulated space environment effect layer. The basic mineral structure layer is prepared from modified olivine, titanium-rich basalt, rare earth doped plagioclase, calcium phosphate minerals, nano iron particles and vitreous minerals according to a specific proportion; the surface activity control layer adopts an atomic layer deposition technology to form a nano oxide layer on the surface of the mineral particles; the simulated space environment effect layer is formed through low-pressure helium ion bombardment and ultraviolet irradiation. The preparation process comprises the steps of intelligent graded crushing, mineral phase change control, surface modification and activation treatment, multi-parameter synchronous regulation and control and the like. The simulated lunar soil can be produced in a customized mode according to different lunar area characteristics, the matching degree with real lunar soil physical characteristics exceeds 90%, the ground testing precision of lunar exploration equipment is remarkably improved, and technical support is provided for lunar on-site resource utilization and lunar base construction.

The invention discloses a tungsten fluff thickness prediction method based on a surface temperature rise condition, and belongs to the technical field of tungsten surface nanostructure evolution under helium ion irradiation. The method comprises the following steps: establishing a tungsten fluff growth rate prediction formula considering a growth-annealing synergistic effect on the basis of an adsorption particle migration mechanism and an annealing kinetics theory; constructing an SURO-FUZZ model in order to simulate the growth dynamic process of tungsten villus and obtain simulation data required by fitting unknown parameters of a prediction formula; through comparison with an experiment, the accuracy of the SURO-FUZZ model is verified; and fitting unknown parameters of a prediction formula through simulation data of SURO-FUZZ. According to the analysis formula provided by the invention, two inhibition effects are fully considered, compared with the prior art, the integrating degree with experimental data under the long-term irradiation condition is higher, and compared with numerical simulation, the consumption of computing resources is greatly reduced, and the growth conditions of tungsten fluff under different surface temperature conditions can be efficiently predicted.

The invention provides a proton helium ion treatment device. The proton helium ion treatment device comprises an injector, an accelerator, a rotating rack, a treatment head, a beam distribution system and a six-dimensional treatment bed which are sequentially arranged in the conveying direction of a beam. The injector comprises a hydrogen ion source and a helium ion source which can be switched; the treatment head and beam distribution system comprises an integrated scanning magnet, a position ionization chamber, a dose ionization chamber, a ridge-shaped filter and a range shifter which are installed on a treatment head support and sequentially arranged in the beam conveying direction, and the integrated scanning magnet is used for beam deflection in the transverse X direction and the transverse Y direction at the same time. A cone beam CT system is further fixedly installed on the rotating rack, and precise positioning and positioning correction of a patient are achieved in combination with the six-dimensional mechanical arm treatment bed. The proton helium ion treatment device can meet the requirement for high precision of patient positioning in ion treatment, ion treatment with optional proton helium ions can be achieved, and the treatment system is more compact through the design of the integrated scanning magnet.

The invention relates to a proton helium ion treatment device based on a synchrotron, an ion source system respectively generates # imgabs0 # and helium ions through two electron cyclotron resonance ion sources, an injector comprises a four-wing RFQ and an IH-DTL, # imgabs1 # or helium ions are preliminarily accelerated to 8MeV / u through the four-wing RFQ and the IH-DTL, # imgabs2 # is stripped into protons through a stripper, and # imgabs3 # or helium ions are stripped into protons through the four-wing RFQ and the IH-DTL. Protons or helium ions are injected into the synchrotron through the injection system, the synchrotron accelerates the protons or helium ions to 235 MeV / u and then the protons or helium ions are led out of the synchrotron through the leading-out system, and the led-out protons or helium ions enter a treatment room for treatment after the transverse size of the protons or helium ions is made to be smaller than 10 mm through the beam transmission system. According to the proton helium ion treatment device, miniaturization of the treatment device is achieved, popularization of helium ion treatment is finally achieved, and the proton helium ion treatment device is welfare for livelihood.

The invention discloses a local platinum doping method for a fast soft recovery diode, and relates to the technical field of semiconductor manufacturing. According to the local platinum doping method for the fast soft recovery diode, hydrogen ions and helium ions are injected to form prefabricated atom vacancy defects, platinum atoms are induced to gather and stay in a prefabricated vacancy defect area, and local platinum atom doping is achieved. The performance advantages of traditional global platinum doping life control and local hydrogen / helium ion life control on the silicon-based fast recovery diode are organically combined, and prefabricated vacancy defects are flexibly formed at different depths through hydrogen ions and helium ions, so that precise local doping of platinum atoms is realized; meanwhile, the fast soft recovery diode has the performance advantages of good reverse recovery characteristic, high softness factor, low reverse recovery voltage change rate, good long-term reliability, low electric leakage, high device junction temperature and the like.

The invention relates to a method and a product for eliminating helium bubble defects in nuclear power steel, which comprises the following steps of: treating the nuclear power steel which is damaged by helium ion irradiation to generate helium bubble gathering and surface hardening by pulse current, eliminating the helium bubble defects, recovering the surface hardness of the nuclear power steel, and realizing dynamic self-repairing of irradiation damaged tissues of the nuclear power steel. The method is suitable for pulse current elimination of irradiation helium bubble defects of nuclear power steel such as austenitic stainless steel and austenite-ferrite duplex stainless steel, and is also suitable for pulse current elimination of irradiation helium bubble defects of any metal material. Experiments prove that helium bubbles induced by irradiation cause serious hardening of the surface of the material, and after the helium bubbles are eliminated through pulse current treatment, nanoindentation tests show that the hardness of the material is remarkably reduced and basically returns to the original level before irradiation. The method has the advantages of short treatment time and low energy consumption, and can effectively prolong the service life of key components such as nuclear-grade main pipelines.

The invention discloses a preparation method of a memristor and the memristor. The preparation method of the memristor comprises the following steps: forming a bottom electrode on a substrate; forming a memristor material layer on one side, far away from the substrate, of the bottom electrode; bombarding the memristive material layer through a helium ion beam to form a conductive channel structure in the memristive material layer; and forming a top electrode on one side, far away from the bottom electrode, of the memristor material layer, wherein the top electrode is electrically connected with the conductive channel structure. According to the technical scheme, the helium ion beam is used for bombarding the memristive material layer to obtain the conductive channel, so that the construction method of the conductive channel is higher in controllability and wider in applicability.

The invention relates to a helium ionization detector based on an MEMS technology, and the detector comprises a substrate and a detection structure, the substrate comprises a substrate, a first bonding layer and a second bonding layer, the first bonding layer and the second bonding layer are respectively bonded to two opposite sides of the substrate in a first direction, and the first direction is perpendicular to the surface of the substrate; the detection structure comprises a detection channel, an air inlet assembly and an air outlet and detection assembly. The detection channel penetrates through the substrate along a first direction; the air inlet assembly is located at an air inlet port, close to the first bonding layer, of the detection channel and is in sealed connection with the air inlet port; the gas outlet and detection assembly is located at a gas outlet port, close to the second bonding layer, of the detection channel and is in sealed connection with the gas outlet port; a sealed space defined by the air inlet assembly, the air outlet and detection assembly and the detection channel is a cavity of the detection structure. The sealing performance between different film layers in the substrate and the sealing performance of the cavity are improved, and the sensitivity of the helium ionization detector is improved.

According to the preparation method of the helium ion detector provided by the invention, ideal electric field distribution can be obtained by arranging the collecting electrode in the closed chamber, and the ion collecting efficiency can be effectively improved by arranging the bias electrode in the closed chamber, so that the helium ion detector can also have a lower detection limit on the premise of a smaller volume, and the detection cost is reduced. The detection sensitivity is relatively high. In addition, the helium ion detector adopts a sandwich structure and is suitable for being combined with a chromatographic column for use or being integrated with a micro-chromatographic column in a monolithic manner.

The invention discloses a silicon-based substrate structure for semiconductor epitaxial stress regulation and control and a preparation method of the silicon-based substrate structure, and belongs to the technical field of semiconductor materials. The method comprises the following steps: firstly prefabricating vacancy gradient in a silicon body by adopting silicon self-ions or inert heavy ions, and then performing helium ion implantation with a relatively low dose, so that helium atoms selectively nucleate in the formed vacancy gradient and grow through unified annealing to obtain a pore volume fraction which continuously changes along with depth. According to the invention, through a division cooperation mechanism of'vacancy prefabrication 'and'helium pore-forming', a coupling relationship between vacancy and gas is not generated by single helium injection any more, so that a pore gradient and a Young modulus gradient which can be designed and continuously adjusted in the thickness direction are realized, the controllability, stability and process compatibility of a pore-forming structure are remarkably improved, and the production cost is reduced. By constructing a modulus gradient structure in the silicon body, the problems of wafer warping, device layer cracking, bonding failure and the like are reduced.

The utility model relates to an injection and extraction static deflector for a proton helium ion therapy synchrotron, which comprises a cutting plate, a cathode, a first support plate, a second support plate and a vacuum cylinder, the first support plate and the second support plate are positioned on the same plane, the cutting plate is movably mounted in the vacuum cylinder through the first support plate, and the cathode is arranged in the vacuum cylinder. The cathode is a titanium electrode and is movably installed in the vacuum cylinder through a second supporting plate. According to the injection and extraction electrostatic deflector for the proton helium ion treatment synchrotron, the positions and deflection angles of the deflector can be respectively adjusted as required through the first supporting plate and the second supporting plate which can be independently adjusted, the cutting plate and the cathode; therefore, different precession distances, field intensities and deflection angles required by proton and helium ion injection and extraction are realized.

The invention relates to the technical field of gene detection devices, in particular to a silicon nitride nanopore device and a preparation method and application thereof based on an angstrom hole, a helium ion beam is used for irradiating the surface of a silicon nitride film of a cleaned silicon nitride chip to obtain a silicon nitride chip with an angstrom hole, and the silicon nitride chip is used for detecting the gene detection device. And after cleaning and drying, carrying out dielectric breakdown to obtain a nanopore with a required size, measuring the obtained nanopore again by using the patch clamp, and drying by using nitrogen to obtain the silicon nitride nanopore device. According to the silicon nitride nanopore device and the preparation method and application thereof based on the angstrom pore, the generation position of the nanopore is controlled in a helium ion beam irradiation area through an angstrom pore confinement intrinsic carrier effect and an avalanche effect and breakdown critical defect density correlation mechanism; and then the formation, evolution and size regulation and control of the nanopore are tracked in real time through dielectric breakdown ion current, and controllable manufacturing of the nanopore with the extremely small size is achieved.

The application relates to a synchrotron for a proton-helium ion therapy device, which comprises eight dipole deflection magnets connected in sequence through eight straight-line sections to form a ring structure, the deflection angle of the eight dipole deflection magnets is 45 degrees, and the maximum magnetic field strength is 2.4T; the eight straight-line sections comprise four long straight-line sections and four short straight-line sections, which are used for accelerating the helium ion beam from an injection energy of 8-10 MeV / u to 200-235 MeV / u and leading out for helium ion therapy, or accelerating the proton beam from an injection energy of 8-10 MeV to 200-750 MeV and leading out for proton therapy. According to the synchrotron for the proton-helium ion therapy device, the structure is very compact, unnecessary gaps and magnet elements are reduced, the circumference of the whole accelerator is reduced, the space of the synchrotron is effectively utilized, and the construction cost of the device and the building is reduced to the maximum extent, and the treatment cost is reduced.

TITLE: Process of micro- or nano-surface structuring of a material. The invention relates to a method for micro- or nano-structuring the surface of a material, characterized in that it comprises an irradiation step (a) consisting of irradiating a localized surface area of ​​said material with a focused gas ion beam, said beam being defined by: - ​​an ion kinetic energy of between 5 and 30 keV for hydrogen ions, between 10 and 60 keV for helium ions, or between 20 and 500 keV for ions with an atomic mass unit greater than or equal to 12, - a flux fixed at a value between 10¹³ and 10¹⁸ ions / cm² / s, and - a fluence whose value is derived from a database linking the nature of said material, the type of ions used and the associated kinetic energy, and the flux value required to obtain micro- or nano-structuring of the surface of the material. Figure for the abstract: Fig. 1

The invention discloses a surface in-situ treatment method for a tungsten first wall of a fusion device, which comprises the following steps: heating the tungsten first wall to a preset temperature interval, and the preset temperature interval is [700 DEG C, 1300 DEG C]; and on the basis of a preset irradiation mode, helium injected in advance is processed, helium plasma is generated, the incident ion energy of the helium plasma reaching the first wall of tungsten is controlled to be within a preset energy interval, and the preset energy interval is [20 eV, 100 eV]. And according to the helium plasma, the first tungsten wall in the preset temperature interval is subjected to irradiation treatment till the accumulated helium ion fluffy quantity of the first tungsten wall meets a preset condition, a tungsten fluff layer and helium bubbles are generated on the first tungsten wall in situ, and the preset condition is that the accumulated helium ion fluffy quantity is larger than the accumulated helium ion fluffy quantity. In this way, the tungsten fluff layer can prevent helium plasma from being polluted by tungsten ions by reducing the net sputtering yield of tungsten. And the helium bubbles can inhibit recrystallization nucleation and grain growth at high temperature.

The preparation method of the vanadium alloy comprises the steps that vanadium powder and alloy raw materials are mixed in proportion to form a mixture; placing the mixture in a vacuum furnace for pretreatment; smelting the mixture in a smelting furnace to form a melt; and the melt is cooled and demoulded, and the vanadium alloy is formed. The method is simple and efficient, and the formed vanadium alloy can effectively improve the helium ion sputtering resistance, so that the safety and reliability of the device are ensured.

The invention discloses a three-beam ion irradiation device for simulating research and development of a novel nuclear reactor material, and the device comprises an accelerator which is used for generating a heavy ion beam line; the hydrogen ion implanter is used for generating hydrogen ion beams; the helium ion implanter is used for generating helium ion beams; the irradiation target chamber is used for receiving beam lines generated by the accelerator, the hydrogen ion implanter and the helium ion implanter; the hydrogen ion beam line and the helium ion beam line are located on the two sides of the heavy ion beam line respectively. According to the three-beam ion irradiation device for simulating the research and development of the novel nuclear reactor material, disclosed by the invention, the deviation of the material between the actual conditions of a simulation experiment and a reactor is reduced, and the influence of neutral particles in a simulation experiment irradiation target chamber on the simulation experiment is reduced, so that the detection of the simulation experiment is more accurate.

The application discloses a surface in-situ processing method of a tungsten first wall of a fusion device, comprising: heating the tungsten first wall to a preset temperature interval, wherein the preset temperature interval is [700 DEG C, 1300 DEG C]. Based on a preset irradiation mode, pre-injected helium gas is processed to generate a helium plasma and control incident ion energy of the helium plasma reaching the tungsten first wall to be in a preset energy interval, wherein the preset energy interval is [20 eV, 100 eV]. According to the helium plasma, the tungsten first wall in the preset temperature interval is irradiated and processed until a cumulative helium ion fluence of the tungsten first wall meets a preset condition, so as to in-situ generate a tungsten villus layer and a helium bubble on the tungsten first wall, wherein the preset condition is that the cumulative helium ion fluence is greater than 1.0 x 10 22 He / m 2. In this way, the tungsten villus layer can reduce the net sputtering yield of tungsten and avoid contamination of the helium plasma by tungsten ions. The helium bubble can inhibit recrystallization nucleation and grain growth at high temperature.

The invention discloses a helium-induced damage resistant and corrosion resistant medium-entropy alloy coating and a preparation method thereof. The FeCrAlN medium-entropy alloy coating which is uniform in component, compact in structure and good in combination with a matrix is successfully prepared on the surface of the matrix such as austenitic stainless steel by adopting an unbalanced magnetron sputtering technology and accurately regulating and controlling key process parameters such as nitrogen partial pressure and sputtering power. The coating comprises the following elements in percentage by weight: 20 to 30 at.% of Fe, 20 to 30 at.% of Cr, 20 to 30 at.% of Al, 10 to 35 at.% of N, and the balance of Fe and inevitable impurities. The thickness is 2-4.5 [mu] m, and the material has a nanocrystalline / amorphous composite structure. On the basis of the medium-entropy alloy design concept, the nitrogen element is introduced, the components and the structure are optimized, effective control over chemical components, phase composition and the microstructure of the coating can be achieved, the comprehensive performance of the coating in a severe service environment is remarkably improved, and the coating especially has excellent helium ion irradiation resistance and liquid lead and bismuth corrosion resistance; and the service life of key components such as the cladding pipe can be effectively prolonged, and the operation safety of a reactor is improved.

The invention provides a method for improving helium ion irradiation resistance of the surface of a body-centered cubic iron material, which comprises the following steps of: (1) surface pretreatment: polishing the surface to be processed by adopting 180-800 # abrasive paper in sequence, so that the surface is bright and flat; and (2) laser surface remelting: carrying out laser surface remelting treatment on the polished pure iron sample by adopting pulse laser. And (3) high-temperature helium ion irradiation: performing high-temperature helium ion irradiation on the prepared sample. The irradiation conditions are as follows: the helium ion type is He < 2 + >, the temperature is 750 DEG C, the incident ion energy is 300 keV, the ion fluence is 1 * 10 < 17 > cm <-2 > and the like. According to the method, laser remelting is carried out on the surface of the body-centered cubic iron material, a large number of dislocation and fine crystal grains are obtained on the near surface layer, growth and aggregation of helium bubbles are inhibited in the high-temperature helium ion irradiation process, and therefore the brittle fracture and failure risks caused by helium bubble coarsening are reduced, and the irradiation resistance of the body-centered cubic iron material is improved.

The invention discloses a method and a system for deducting a hydrogen background of a helium mass spectrometer leak detector, and belongs to the technical field of helium mass spectrometer leak detectors. The positive and negative bias voltages are applied to the original acceleration voltage, so that the maximum value and the minimum value of the hydrogen ion signal are obtained, and the background value of the hydrogen ion signal at the peak value of the helium ion signal when the bias voltage is not applied can be estimated through the maximum value and the minimum value of the hydrogen ion signal. And the total ion signal is deducted from the total ion signal when the bias voltage is not applied, so that the detection result of the helium ion signal is more accurate.

The invention relates to a method for transferring a thin film onto a support substrate, the method comprising the steps of:-providing a bonding structure comprising a donor substrate and a support substrate assembled by direct bonding with their respective front faces following a bonding interface extending along a main plane, a donor substrate comprising an embedded frangible plane substantially parallel to the main plane and formed by a step of implanting a light substance comprising co-implanting a first dose and a first implantation energy of hydrogen ions and a second dose and a second implantation energy of helium ions; -applying a breaking thermal treatment to the bonded structure so as to initiate a spontaneous separation along the embedded frangible plane, the spontaneous separation being associated with microcrack growth caused in said plane due to thermal activation, the separation resulting in the transfer of a thin film from the donor substrate onto the support substrate. The method is notable in that the step of implanting the light substance further comprises locally implanting a third dose and a third energy localized hydrogen ion, thereby forming an excess localized region in the embedded frangible plane, the third dose corresponding to more than three times the first dose, such that the excess localized region constitutes a separation start point.

To prevent a lamination defect in an SiC semiconductor device from expanding during current application.SOLUTION: A method of manufacturing a semiconductor device 10 comprises irradiating the semiconductor device 10 with helium ions to form a point defect in a buffer layer 14, where the semiconductor device comprises a substrate 12 made of silicon carbide, the buffer layer 14 of a first conductivity type on a first surface 12a of the substrate 12, and a drift layer 16 of the first conductivity type which is on the buffer layer 14 and has lower impurity concentration than the buffer layer 14. The maximum density of the point defect formed in the buffer layer 14 by the irradiation with the helium ions is 2×1016 / cm3 or larger, and the density of a point defect formed in the drift layer 16 by the irradiation with the helium ions is 2×1017 / cm3 or smaller.SELECTED DRAWING: Figure 2

Methods open etch stop layers in an integrated environment along with metallization processes. In some embodiments, a method for opening an etch stop layer (ESL) prior to metallization may include etching the ESL with an anisotropic process using direct plasma to form helium ions that are configured to roughen the ESL for a first duration of approximately 10 seconds to approximately 30 seconds, forming aluminum fluoride on the ESL using remote plasma and nitrogen trifluoride gas for a second duration of approximately 10 seconds to approximately 30 seconds, and exposing the ESL to a gas mixture of boron trichloride, trimethylaluminum, and / or dimethylaluminum chloride at a temperature of approximately 100 degrees Celsius to approximately 350 degrees Celsius to remove aluminum fluoride from the ESL and a portion of a material of the ESL for a third duration of approximately 30 seconds to approximately 60 seconds.

A method for post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate comprises: positioning the substrate having the silicon nitride (SiN)-based dielectric film formed thereon in a processing chamber; and exposing the silicon nitride (SiN)-based dielectric film to a helium-containing high-energy, low-dose plasma in the processing chamber. The energy of the helium ions in the helium-containing high-energy, low-dose plasma is between 1 eV and 3.01 eV, and the flux density of the helium ions in the helium-containing high-energy, low-dose plasma is between 5×10 15 ions / cm 2 · second and 1.37×10 16 ions / cm 2 · Between seconds.

The present invention relates to a method for transferring a thin film onto a support substrate, comprising: providing a bonded structure comprising a donor substrate and a support substrate assembled by direct bonding at their respective front surfaces according to a bonding interface extending along a main plane, the donor substrate being substantially parallel to the main plane and comprising a buried brittle surface formed by implanting light species, the implanting light species comprising co-implantation of hydrogen ions at a first dose and a first implantation energy and helium ions at a second dose and a second implantation energy; and applying a thermal breakdown treatment to the bonded structure to induce spontaneous separation along said plane associated with the growth of microcracks in the buried brittle surface by thermal activation, the separation resulting in the transfer of the thin film from the donor substrate onto the support substrate. The implanting light species is notable in that it further comprises a localized implantation of hydrogen ions with a third dose and a third energy to form a localized overdosed region in the buried brittle surface. The third dose corresponds to more than three times the first dose, with the local area of ​​overdosing constituting the starting point of separation.

The present invention addresses the problem of forming a carbon film having high etching resistance. The solution is that a carbon film raw material is coated on a substrate by a spin coating method to form a carbon-containing film on the substrate, the carbon-containing film is heated and fired to form a carbon film, and the carbon film is irradiated with helium ions.

The invention relates to a rotating rack of a helium ion treatment device, which comprises a first rolling ring, a second rolling ring, a connecting assembly, a first supporting mechanism and a second supporting mechanism, and is characterized in that the first rolling ring is supported by the first supporting mechanism and can rotate relative to the first supporting mechanism; the second rolling ring is supported by the second supporting mechanism and can rotate relative to the second supporting mechanism; the first rolling ring and the second rolling ring are fixedly connected through the connecting assembly, a driving mechanism is arranged on the first supporting mechanism, and the driving mechanism is connected with the first rolling ring and used for driving the first rolling ring and the second rolling ring to rotate; the first rolling ring is provided with a treatment head, the connecting assembly is provided with a beam transmission assembly, and the beam transmission assembly is connected with the treatment head. The rotating rack of the helium ion treatment device is simple in structure, small in size, light in weight and low in manufacturing cost.

The application discloses a helium ion gas chromatograph suitable for SF6 decomposition product detection, wherein sample gas in a quantitative ring is introduced into a rear-stage adsorption column through carrier gas, the adsorption column contains sufficient kdhf-0 type molecular sieve, after the sample gas and the carrier gas are left in the adsorption column for a set time, SO2 gas is completely adsorbed, and then the gas containing only helium and SF6 gas after adsorption is blown to a rear-stage chromatographic column for separation through the carrier gas; after a set time, a heating rod in the adsorption column is started to heat the molecular sieve to 100 DEG C for desorption, the desorbed SO2 gas is introduced into a small gas storage tank through the carrier gas, after a set time, a valve is controlled to make the carrier gas stop entering the adsorption column, a vacuum pump is started to exhaust all residual gas in the adsorption column into the gas storage tank, then the vacuum pump is stopped, the carrier gas is controlled to flow through the adsorption column again, the gas in the gas storage tank is pushed into the rear-stage chromatographic column, and the SO2 gas in the gas is introduced into a PDHID detector, so that the ultra-low concentration SO2 gas concentration is accurately detected without SF6 gas interference.