15 results about "Helium ions" patented technology

The invention relates to a method and a product for eliminating helium bubble defects in nuclear power steel, which comprises the following steps of: treating the nuclear power steel which is damaged by helium ion irradiation to generate helium bubble gathering and surface hardening by pulse current, eliminating the helium bubble defects, recovering the surface hardness of the nuclear power steel, and realizing dynamic self-repairing of irradiation damaged tissues of the nuclear power steel. The method is suitable for pulse current elimination of irradiation helium bubble defects of nuclear power steel such as austenitic stainless steel and austenite-ferrite duplex stainless steel, and is also suitable for pulse current elimination of irradiation helium bubble defects of any metal material. Experiments prove that helium bubbles induced by irradiation cause serious hardening of the surface of the material, and after the helium bubbles are eliminated through pulse current treatment, nanoindentation tests show that the hardness of the material is remarkably reduced and basically returns to the original level before irradiation. The method has the advantages of short treatment time and low energy consumption, and can effectively prolong the service life of key components such as nuclear-grade main pipelines.

The invention discloses a silicon-based substrate structure for semiconductor epitaxial stress regulation and control and a preparation method of the silicon-based substrate structure, and belongs to the technical field of semiconductor materials. The method comprises the following steps: firstly prefabricating vacancy gradient in a silicon body by adopting silicon self-ions or inert heavy ions, and then performing helium ion implantation with a relatively low dose, so that helium atoms selectively nucleate in the formed vacancy gradient and grow through unified annealing to obtain a pore volume fraction which continuously changes along with depth. According to the invention, through a division cooperation mechanism of'vacancy prefabrication 'and'helium pore-forming', a coupling relationship between vacancy and gas is not generated by single helium injection any more, so that a pore gradient and a Young modulus gradient which can be designed and continuously adjusted in the thickness direction are realized, the controllability, stability and process compatibility of a pore-forming structure are remarkably improved, and the production cost is reduced. By constructing a modulus gradient structure in the silicon body, the problems of wafer warping, device layer cracking, bonding failure and the like are reduced.

The invention relates to the technical field of gene detection devices, in particular to a silicon nitride nanopore device and a preparation method and application thereof based on an angstrom hole, a helium ion beam is used for irradiating the surface of a silicon nitride film of a cleaned silicon nitride chip to obtain a silicon nitride chip with an angstrom hole, and the silicon nitride chip is used for detecting the gene detection device. And after cleaning and drying, carrying out dielectric breakdown to obtain a nanopore with a required size, measuring the obtained nanopore again by using the patch clamp, and drying by using nitrogen to obtain the silicon nitride nanopore device. According to the silicon nitride nanopore device and the preparation method and application thereof based on the angstrom pore, the generation position of the nanopore is controlled in a helium ion beam irradiation area through an angstrom pore confinement intrinsic carrier effect and an avalanche effect and breakdown critical defect density correlation mechanism; and then the formation, evolution and size regulation and control of the nanopore are tracked in real time through dielectric breakdown ion current, and controllable manufacturing of the nanopore with the extremely small size is achieved.

The invention discloses a surface in-situ treatment method for a tungsten first wall of a fusion device, which comprises the following steps: heating the tungsten first wall to a preset temperature interval, and the preset temperature interval is [700 DEG C, 1300 DEG C]; and on the basis of a preset irradiation mode, helium injected in advance is processed, helium plasma is generated, the incident ion energy of the helium plasma reaching the first wall of tungsten is controlled to be within a preset energy interval, and the preset energy interval is [20 eV, 100 eV]. And according to the helium plasma, the first tungsten wall in the preset temperature interval is subjected to irradiation treatment till the accumulated helium ion fluffy quantity of the first tungsten wall meets a preset condition, a tungsten fluff layer and helium bubbles are generated on the first tungsten wall in situ, and the preset condition is that the accumulated helium ion fluffy quantity is larger than the accumulated helium ion fluffy quantity. In this way, the tungsten fluff layer can prevent helium plasma from being polluted by tungsten ions by reducing the net sputtering yield of tungsten. And the helium bubbles can inhibit recrystallization nucleation and grain growth at high temperature.

The application discloses a surface in-situ processing method of a tungsten first wall of a fusion device, comprising: heating the tungsten first wall to a preset temperature interval, wherein the preset temperature interval is [700 DEG C, 1300 DEG C]. Based on a preset irradiation mode, pre-injected helium gas is processed to generate a helium plasma and control incident ion energy of the helium plasma reaching the tungsten first wall to be in a preset energy interval, wherein the preset energy interval is [20 eV, 100 eV]. According to the helium plasma, the tungsten first wall in the preset temperature interval is irradiated and processed until a cumulative helium ion fluence of the tungsten first wall meets a preset condition, so as to in-situ generate a tungsten villus layer and a helium bubble on the tungsten first wall, wherein the preset condition is that the cumulative helium ion fluence is greater than 1.0 x 10 22 He / m 2. In this way, the tungsten villus layer can reduce the net sputtering yield of tungsten and avoid contamination of the helium plasma by tungsten ions. The helium bubble can inhibit recrystallization nucleation and grain growth at high temperature.

The invention discloses a method and a system for deducting a hydrogen background of a helium mass spectrometer leak detector, and belongs to the technical field of helium mass spectrometer leak detectors. The positive and negative bias voltages are applied to the original acceleration voltage, so that the maximum value and the minimum value of the hydrogen ion signal are obtained, and the background value of the hydrogen ion signal at the peak value of the helium ion signal when the bias voltage is not applied can be estimated through the maximum value and the minimum value of the hydrogen ion signal. And the total ion signal is deducted from the total ion signal when the bias voltage is not applied, so that the detection result of the helium ion signal is more accurate.

The invention discloses a system for analyzing the component content of a decomposition product of sulfur hexafluoride gas or sulfur hexafluoride / nitrogen mixed insulating gas in electrical equipment and a use method of the system, and belongs to the field of gas chromatography detection. In particular to an analysis system for the component content of a decomposition product of sulfur hexafluoride gas or sulfur hexafluoride / nitrogen mixed insulating gas in electrical equipment and a use method of the analysis system. The invention aims to solve the technical problem that the existing electrical equipment insulating gas decomposition product component detection system cannot comprehensively identify the types of decomposition products of SF6 gas or SF6 / N2 mixed insulating gas. According to the invention, the analytical column, the conductivity detector, the hydrogen flame ionization detector and the flame photometric detector are designed, so that analysis and detection of trace components of gas can be realized; the device can effectively detect multiple components of decomposition products of SF6 gas and SF6 / N2 mixed insulating gas, is high in accuracy and sensitivity, and is low in cost, quick and efficient compared with a helium ionization detection system.

The invention provides a method for reducing YBCO nanowire warping voltage through ion irradiation, and belongs to the technical field of single photon detection. According to the method, a focused ion beam (FIB) is adopted to carry out helium (He) ion beam local periodic irradiation, an extra pinning center is introduced into the ultrathin YBCO nanowire, the movement of vortex in the nanowire is limited, the distribution uniformity of vortex pinning points is improved, and the warping voltage before voltage jump of the YBCO nanowire can be effectively reduced; meanwhile, the ion radius of He ions is small, the diffusion range of the He ions in the ultra-thin YBCO nanowire is smaller, and the influence of ion diffusion on the superconducting performance of the ultra-thin YBCO nanowire can be effectively reduced.

The utility model provides a proton helium ion treatment device. The proton helium ion treatment device comprises an injector, an accelerator, a rotating rack, a treatment head, a beam distribution system and a six-dimensional treatment bed which are sequentially arranged along the transportation direction of a beam. The injector comprises a hydrogen ion source and a helium ion source which can be switched; the treatment head and beam distribution system comprises an integrated scanning magnet, a position ionization chamber, a dose ionization chamber, a ridge-shaped filter and a range shifter which are installed on a treatment head support and sequentially arranged in the beam conveying direction, and the integrated scanning magnet is used for beam deflection in the transverse X direction and the transverse Y direction at the same time. A cone beam CT system is further fixedly installed on the rotating rack, and precise positioning and positioning correction of a patient are achieved in combination with the six-dimensional mechanical arm treatment bed. The proton helium ion treatment device can meet the requirement for high precision of patient positioning in ion treatment, ion treatment with optional proton helium ions can be achieved, and the treatment system is more compact through the design of the integrated scanning magnet.

This invention relates to the technical field of pipeline leak detection devices, specifically a helium-nitrogen mixed gas pipeline leak detection device. It mainly includes a main body, with a flexible hose connected to the air inlet of the main body, and a connecting pipe connected to the other end of the hose. It also includes: a filter mechanism disposed inside the connecting pipe; an adjustment mechanism disposed below the connecting pipe; and a cleaning mechanism disposed inside the connecting pipe. When detecting a pipeline leak by bringing the suction tube close to the outer wall of the pipeline, the suction tube draws in the gas from the outer wall of the pipeline. The gas enters the main body for detection through the connecting pipe, connecting sleeve, connecting pipe, and flexible hose. As the gas passes through the connecting pipe, it is filtered by the filter cartridge and filter frame. These dust particles will not enter the mass spectrometry analysis chamber of the main body and will not interfere with the detection of helium ions. Even minor leaks in the pipeline can be accurately identified, thereby improving the accuracy of the detection.

The utility model relates to the technical field of trace phosphine analysis, in particular to a trace phosphine detection device for a disilane synthesis and purification process, which comprises a six-way valve, a first interface, a second interface, a third interface, a fourth interface, a fifth interface and a sixth interface are annularly and sequentially arranged on the six-way valve at equal intervals, the second interface is a carrier gas inlet, and the third interface is a carrier gas outlet. The fifth interface is a sample inlet, and the sixth interface is an emptying hole; the two ends of the first air pipe are communicated with the first connector and the fourth connector respectively, and a quantitative pipe is arranged on the first air pipe; one end of the second gas pipe is communicated with the third interface, the second organ is provided with a chromatographic column and a DID helium ionization detector, and the chromatographic column is arranged between the third interface and the DID helium ionization detector. When trace phosphorane is analyzed, impurity concentration changes can be rapidly detected, a balanced (stable state) analysis value can be rapidly measured, and the method has the advantages of being accurate in quantification, low in detection limit and short in analysis period.

The application discloses a kind of powder refinement processing equipment and ceramic powder refinement method based on ion beam injection, it is related to ceramic material preparation technical field, including: material cavity, helium ion emitter;First hopper is arranged in material cavity, the lateral recess that is recessed to the outside of material cavity is arranged on the inner wall of material cavity, and the lateral recess is used to support the powder in material cavity;Material cavity can be vertically rotated by driving motor, and the powder in material cavity can be transported to the top of material cavity;Helium ion emitter is arranged in the side of the bottom of first hopper, for emitting lateral helium ion beam below the bottom of first hopper;The application can inject helium ion beam in ceramic powder coarse material, cooperate annealing and grinding process method, can be prepared with the particle size of submicron grade superfine ceramic powder finished product, the particle size distribution of prepared ceramic powder finished product is narrow, and uniformity is good, no waste liquid discharge, meet green manufacturing and sustainable development concept, save energy consumption, and the degree of refinement is high.

The invention belongs to the field of magnetic confinement controlled nuclear fusion, and discloses a numerical calculation method and system for phase space distribution function evolution of helium ions in magnetic confinement deuterium-tritium fusion, and the method comprises the steps: carrying out the numerical stability verification based on a self-adaptive CFL condition, and determining a proper step size value, carrying out discretization processing on the input data by utilizing a multi-dimensional grid; establishing a Fokker-Planck equation containing friction, energy diffusion, position space transport and helium ion generation source items, and converting the Fokker-Planck equation into a difference format capable of being solved in a recursive manner through a finite difference method; in the calculation process, a corresponding boundary condition is set in combination with physical reality, a difference format of a boundary area is corrected, self-consistent updating is carried out on the main ion density based on a quasi-neutral condition, and information of evolution of a helium ion phase space distribution function along with time is obtained; and introducing an energy boundary judgment method related to the equivalent temperature of helium ash, distinguishing the helium ash from high-energy particles, and outputting a result of evolution of density profiles of the helium ash and the high-energy particles along with time.

Provided is a proton and helium ion therapeutic device (A) based on a synchrotron (4). An ion source system (1) separately generates H 2 + and helium ions by means of two electron cyclotron resonance ion sources. An injector (2) comprises a four-vane RFQ and IH-DTL. H 2 + or helium ions are preliminarily accelerated to 8 MeV / u by means of the four-vane RFQ and IH-DTL, and then stripped into protons by means of a stripper. The protons or helium ions are injected into the synchrotron (4) by an injection system (3), accelerated to 235 MeV / u in the synchrotron (4), and then extracted from the synchrotron (4) by an extraction system (5). The extracted protons or helium ions pass through a beam transmission system (6) to make the transverse size thereof less than 10 mm, and then enter a treatment room (7) for treatment.

The invention relates to a 12-inch wafer native defect mechanism modeling and high-resolution recognition method technology based on deep learning, and aims to solve the problem that the existing defect detection and repair technology is difficult to consider high-resolution recognition, physical mechanism modeling and process collaborative optimization at the same time. The method comprises the following steps: performing high-precision three-dimensional imaging on a wafer through a laser scanning confocal microscope to obtain surface topography data; performing intelligent classification and evaluation on defects by combining a mixed deep learning model of a convolutional neural network and a long-short-term memory network; depositing a monocrystalline silicon thin film on the back surface of the wafer, then performing high-temperature oxidation treatment, monitoring the warping state in real time by using a laser interferometer, and dynamically adjusting the clamping pressure through a fuzzy logic algorithm; helium ions are synchronously injected in the controlled multi-section cooling process to repair dislocation and microcracks, and the defect recombination efficiency is improved with the assistance of rapid thermal annealing; and meanwhile, process parameters are optimized by fusing finite element thermal stress modeling and a genetic algorithm, and closed-loop feedback is realized through an online detection system.