32 results about "Helium ions" patented technology

The invention relates to a method and a product for eliminating helium bubble defects in nuclear power steel, which comprises the following steps of: treating the nuclear power steel which is damaged by helium ion irradiation to generate helium bubble gathering and surface hardening by pulse current, eliminating the helium bubble defects, recovering the surface hardness of the nuclear power steel, and realizing dynamic self-repairing of irradiation damaged tissues of the nuclear power steel. The method is suitable for pulse current elimination of irradiation helium bubble defects of nuclear power steel such as austenitic stainless steel and austenite-ferrite duplex stainless steel, and is also suitable for pulse current elimination of irradiation helium bubble defects of any metal material. Experiments prove that helium bubbles induced by irradiation cause serious hardening of the surface of the material, and after the helium bubbles are eliminated through pulse current treatment, nanoindentation tests show that the hardness of the material is remarkably reduced and basically returns to the original level before irradiation. The method has the advantages of short treatment time and low energy consumption, and can effectively prolong the service life of key components such as nuclear-grade main pipelines.

The invention relates to a helium ionization detector based on an MEMS technology, and the detector comprises a substrate and a detection structure, the substrate comprises a substrate, a first bonding layer and a second bonding layer, the first bonding layer and the second bonding layer are respectively bonded to two opposite sides of the substrate in a first direction, and the first direction is perpendicular to the surface of the substrate; the detection structure comprises a detection channel, an air inlet assembly and an air outlet and detection assembly. The detection channel penetrates through the substrate along a first direction; the air inlet assembly is located at an air inlet port, close to the first bonding layer, of the detection channel and is in sealed connection with the air inlet port; the gas outlet and detection assembly is located at a gas outlet port, close to the second bonding layer, of the detection channel and is in sealed connection with the gas outlet port; a sealed space defined by the air inlet assembly, the air outlet and detection assembly and the detection channel is a cavity of the detection structure. The sealing performance between different film layers in the substrate and the sealing performance of the cavity are improved, and the sensitivity of the helium ionization detector is improved.

The invention discloses a silicon-based substrate structure for semiconductor epitaxial stress regulation and control and a preparation method of the silicon-based substrate structure, and belongs to the technical field of semiconductor materials. The method comprises the following steps: firstly prefabricating vacancy gradient in a silicon body by adopting silicon self-ions or inert heavy ions, and then performing helium ion implantation with a relatively low dose, so that helium atoms selectively nucleate in the formed vacancy gradient and grow through unified annealing to obtain a pore volume fraction which continuously changes along with depth. According to the invention, through a division cooperation mechanism of'vacancy prefabrication 'and'helium pore-forming', a coupling relationship between vacancy and gas is not generated by single helium injection any more, so that a pore gradient and a Young modulus gradient which can be designed and continuously adjusted in the thickness direction are realized, the controllability, stability and process compatibility of a pore-forming structure are remarkably improved, and the production cost is reduced. By constructing a modulus gradient structure in the silicon body, the problems of wafer warping, device layer cracking, bonding failure and the like are reduced.

The invention relates to the technical field of gene detection devices, in particular to a silicon nitride nanopore device and a preparation method and application thereof based on an angstrom hole, a helium ion beam is used for irradiating the surface of a silicon nitride film of a cleaned silicon nitride chip to obtain a silicon nitride chip with an angstrom hole, and the silicon nitride chip is used for detecting the gene detection device. And after cleaning and drying, carrying out dielectric breakdown to obtain a nanopore with a required size, measuring the obtained nanopore again by using the patch clamp, and drying by using nitrogen to obtain the silicon nitride nanopore device. According to the silicon nitride nanopore device and the preparation method and application thereof based on the angstrom pore, the generation position of the nanopore is controlled in a helium ion beam irradiation area through an angstrom pore confinement intrinsic carrier effect and an avalanche effect and breakdown critical defect density correlation mechanism; and then the formation, evolution and size regulation and control of the nanopore are tracked in real time through dielectric breakdown ion current, and controllable manufacturing of the nanopore with the extremely small size is achieved.

The application relates to a synchrotron for a proton-helium ion therapy device, which comprises eight dipole deflection magnets connected in sequence through eight straight-line sections to form a ring structure, the deflection angle of the eight dipole deflection magnets is 45 degrees, and the maximum magnetic field strength is 2.4T; the eight straight-line sections comprise four long straight-line sections and four short straight-line sections, which are used for accelerating the helium ion beam from an injection energy of 8-10 MeV / u to 200-235 MeV / u and leading out for helium ion therapy, or accelerating the proton beam from an injection energy of 8-10 MeV to 200-750 MeV and leading out for proton therapy. According to the synchrotron for the proton-helium ion therapy device, the structure is very compact, unnecessary gaps and magnet elements are reduced, the circumference of the whole accelerator is reduced, the space of the synchrotron is effectively utilized, and the construction cost of the device and the building is reduced to the maximum extent, and the treatment cost is reduced.

The invention discloses a surface in-situ treatment method for a tungsten first wall of a fusion device, which comprises the following steps: heating the tungsten first wall to a preset temperature interval, and the preset temperature interval is [700 DEG C, 1300 DEG C]; and on the basis of a preset irradiation mode, helium injected in advance is processed, helium plasma is generated, the incident ion energy of the helium plasma reaching the first wall of tungsten is controlled to be within a preset energy interval, and the preset energy interval is [20 eV, 100 eV]. And according to the helium plasma, the first tungsten wall in the preset temperature interval is subjected to irradiation treatment till the accumulated helium ion fluffy quantity of the first tungsten wall meets a preset condition, a tungsten fluff layer and helium bubbles are generated on the first tungsten wall in situ, and the preset condition is that the accumulated helium ion fluffy quantity is larger than the accumulated helium ion fluffy quantity. In this way, the tungsten fluff layer can prevent helium plasma from being polluted by tungsten ions by reducing the net sputtering yield of tungsten. And the helium bubbles can inhibit recrystallization nucleation and grain growth at high temperature.

The application discloses a surface in-situ processing method of a tungsten first wall of a fusion device, comprising: heating the tungsten first wall to a preset temperature interval, wherein the preset temperature interval is [700 DEG C, 1300 DEG C]. Based on a preset irradiation mode, pre-injected helium gas is processed to generate a helium plasma and control incident ion energy of the helium plasma reaching the tungsten first wall to be in a preset energy interval, wherein the preset energy interval is [20 eV, 100 eV]. According to the helium plasma, the tungsten first wall in the preset temperature interval is irradiated and processed until a cumulative helium ion fluence of the tungsten first wall meets a preset condition, so as to in-situ generate a tungsten villus layer and a helium bubble on the tungsten first wall, wherein the preset condition is that the cumulative helium ion fluence is greater than 1.0 x 10 22 He / m 2. In this way, the tungsten villus layer can reduce the net sputtering yield of tungsten and avoid contamination of the helium plasma by tungsten ions. The helium bubble can inhibit recrystallization nucleation and grain growth at high temperature.

The invention discloses a helium-induced damage resistant and corrosion resistant medium-entropy alloy coating and a preparation method thereof. The FeCrAlN medium-entropy alloy coating which is uniform in component, compact in structure and good in combination with a matrix is successfully prepared on the surface of the matrix such as austenitic stainless steel by adopting an unbalanced magnetron sputtering technology and accurately regulating and controlling key process parameters such as nitrogen partial pressure and sputtering power. The coating comprises the following elements in percentage by weight: 20 to 30 at.% of Fe, 20 to 30 at.% of Cr, 20 to 30 at.% of Al, 10 to 35 at.% of N, and the balance of Fe and inevitable impurities. The thickness is 2-4.5 [mu] m, and the material has a nanocrystalline / amorphous composite structure. On the basis of the medium-entropy alloy design concept, the nitrogen element is introduced, the components and the structure are optimized, effective control over chemical components, phase composition and the microstructure of the coating can be achieved, the comprehensive performance of the coating in a severe service environment is remarkably improved, and the coating especially has excellent helium ion irradiation resistance and liquid lead and bismuth corrosion resistance; and the service life of key components such as the cladding pipe can be effectively prolonged, and the operation safety of a reactor is improved.

The invention provides a method for improving helium ion irradiation resistance of the surface of a body-centered cubic iron material, which comprises the following steps of: (1) surface pretreatment: polishing the surface to be processed by adopting 180-800 # abrasive paper in sequence, so that the surface is bright and flat; and (2) laser surface remelting: carrying out laser surface remelting treatment on the polished pure iron sample by adopting pulse laser. And (3) high-temperature helium ion irradiation: performing high-temperature helium ion irradiation on the prepared sample. The irradiation conditions are as follows: the helium ion type is He < 2 + >, the temperature is 750 DEG C, the incident ion energy is 300 keV, the ion fluence is 1 * 10 < 17 > cm <-2 > and the like. According to the method, laser remelting is carried out on the surface of the body-centered cubic iron material, a large number of dislocation and fine crystal grains are obtained on the near surface layer, growth and aggregation of helium bubbles are inhibited in the high-temperature helium ion irradiation process, and therefore the brittle fracture and failure risks caused by helium bubble coarsening are reduced, and the irradiation resistance of the body-centered cubic iron material is improved.

The invention discloses a method and a system for deducting a hydrogen background of a helium mass spectrometer leak detector, and belongs to the technical field of helium mass spectrometer leak detectors. The positive and negative bias voltages are applied to the original acceleration voltage, so that the maximum value and the minimum value of the hydrogen ion signal are obtained, and the background value of the hydrogen ion signal at the peak value of the helium ion signal when the bias voltage is not applied can be estimated through the maximum value and the minimum value of the hydrogen ion signal. And the total ion signal is deducted from the total ion signal when the bias voltage is not applied, so that the detection result of the helium ion signal is more accurate.

To prevent a lamination defect in an SiC semiconductor device from expanding during current application.SOLUTION: A method of manufacturing a semiconductor device 10 comprises irradiating the semiconductor device 10 with helium ions to form a point defect in a buffer layer 14, where the semiconductor device comprises a substrate 12 made of silicon carbide, the buffer layer 14 of a first conductivity type on a first surface 12a of the substrate 12, and a drift layer 16 of the first conductivity type which is on the buffer layer 14 and has lower impurity concentration than the buffer layer 14. The maximum density of the point defect formed in the buffer layer 14 by the irradiation with the helium ions is 2×1016 / cm3 or larger, and the density of a point defect formed in the drift layer 16 by the irradiation with the helium ions is 2×1017 / cm3 or smaller.SELECTED DRAWING: Figure 2

The application discloses a helium ion gas chromatograph suitable for SF6 decomposition product detection, wherein sample gas in a quantitative ring is introduced into a rear-stage adsorption column through carrier gas, the adsorption column contains sufficient kdhf-0 type molecular sieve, after the sample gas and the carrier gas are left in the adsorption column for a set time, SO2 gas is completely adsorbed, and then the gas containing only helium and SF6 gas after adsorption is blown to a rear-stage chromatographic column for separation through the carrier gas; after a set time, a heating rod in the adsorption column is started to heat the molecular sieve to 100 DEG C for desorption, the desorbed SO2 gas is introduced into a small gas storage tank through the carrier gas, after a set time, a valve is controlled to make the carrier gas stop entering the adsorption column, a vacuum pump is started to exhaust all residual gas in the adsorption column into the gas storage tank, then the vacuum pump is stopped, the carrier gas is controlled to flow through the adsorption column again, the gas in the gas storage tank is pushed into the rear-stage chromatographic column, and the SO2 gas in the gas is introduced into a PDHID detector, so that the ultra-low concentration SO2 gas concentration is accurately detected without SF6 gas interference.

The invention discloses a system for analyzing the component content of a decomposition product of sulfur hexafluoride gas or sulfur hexafluoride / nitrogen mixed insulating gas in electrical equipment and a use method of the system, and belongs to the field of gas chromatography detection. In particular to an analysis system for the component content of a decomposition product of sulfur hexafluoride gas or sulfur hexafluoride / nitrogen mixed insulating gas in electrical equipment and a use method of the analysis system. The invention aims to solve the technical problem that the existing electrical equipment insulating gas decomposition product component detection system cannot comprehensively identify the types of decomposition products of SF6 gas or SF6 / N2 mixed insulating gas. According to the invention, the analytical column, the conductivity detector, the hydrogen flame ionization detector and the flame photometric detector are designed, so that analysis and detection of trace components of gas can be realized; the device can effectively detect multiple components of decomposition products of SF6 gas and SF6 / N2 mixed insulating gas, is high in accuracy and sensitivity, and is low in cost, quick and efficient compared with a helium ionization detection system.

The invention provides a method for reducing YBCO nanowire warping voltage through ion irradiation, and belongs to the technical field of single photon detection. According to the method, a focused ion beam (FIB) is adopted to carry out helium (He) ion beam local periodic irradiation, an extra pinning center is introduced into the ultrathin YBCO nanowire, the movement of vortex in the nanowire is limited, the distribution uniformity of vortex pinning points is improved, and the warping voltage before voltage jump of the YBCO nanowire can be effectively reduced; meanwhile, the ion radius of He ions is small, the diffusion range of the He ions in the ultra-thin YBCO nanowire is smaller, and the influence of ion diffusion on the superconducting performance of the ultra-thin YBCO nanowire can be effectively reduced.

The present invention provides an SOI wafer and a manufacturing method thereof, a stripping layer is formed in a device substrate by sequentially performing a hydrogen ion implantation process and a helium ion implantation process, and the ion beam current of the helium ion implantation process is less than 0.315 times the implantation energy of the hydrogen ion implantation process; a peeling process is performed to peel a portion of the thickness of the device substrate along the peeling layer. As the ion beam current of the helium ion implantation process is smaller than 0.315 times of the implantation energy of the hydrogen ion implantation process, helium ions can be uniformly distributed in the stripping layer, and the dissipation of the helium ions and the hydrogen ions is reduced or avoided, so that the foaming effect of a stripping interface during stripping treatment is improved, and the stripping efficiency is improved. And further, the surface roughness of the device substrate after stripping treatment is reduced, so that the warping degree of the SOI wafer is less than 28 microns, and the surface roughness is less than or equal to 0.25.

The utility model relates to a rotating rack of a helium ion treatment device, which comprises a first rolling ring, a second rolling ring, a connecting assembly, a first supporting mechanism and a second supporting mechanism, and is characterized in that the first rolling ring is supported by the first supporting mechanism and can rotate relative to the first supporting mechanism; the second rolling ring is supported by the second supporting mechanism and can rotate relative to the second supporting mechanism; the first rolling ring and the second rolling ring are fixedly connected through the connecting assembly, a driving mechanism is arranged on the first supporting mechanism, and the driving mechanism is connected with the first rolling ring and used for driving the first rolling ring and the second rolling ring to rotate; the first rolling ring is provided with a treatment head, the connecting assembly is provided with a beam transmission assembly, and the beam transmission assembly is connected with the treatment head. The rotating rack of the helium ion treatment device is simple in structure, small in size, light in weight and low in manufacturing cost.

The utility model provides a proton helium ion treatment device. The proton helium ion treatment device comprises an injector, an accelerator, a rotating rack, a treatment head, a beam distribution system and a six-dimensional treatment bed which are sequentially arranged along the transportation direction of a beam. The injector comprises a hydrogen ion source and a helium ion source which can be switched; the treatment head and beam distribution system comprises an integrated scanning magnet, a position ionization chamber, a dose ionization chamber, a ridge-shaped filter and a range shifter which are installed on a treatment head support and sequentially arranged in the beam conveying direction, and the integrated scanning magnet is used for beam deflection in the transverse X direction and the transverse Y direction at the same time. A cone beam CT system is further fixedly installed on the rotating rack, and precise positioning and positioning correction of a patient are achieved in combination with the six-dimensional mechanical arm treatment bed. The proton helium ion treatment device can meet the requirement for high precision of patient positioning in ion treatment, ion treatment with optional proton helium ions can be achieved, and the treatment system is more compact through the design of the integrated scanning magnet.

This invention relates to the technical field of pipeline leak detection devices, specifically a helium-nitrogen mixed gas pipeline leak detection device. It mainly includes a main body, with a flexible hose connected to the air inlet of the main body, and a connecting pipe connected to the other end of the hose. It also includes: a filter mechanism disposed inside the connecting pipe; an adjustment mechanism disposed below the connecting pipe; and a cleaning mechanism disposed inside the connecting pipe. When detecting a pipeline leak by bringing the suction tube close to the outer wall of the pipeline, the suction tube draws in the gas from the outer wall of the pipeline. The gas enters the main body for detection through the connecting pipe, connecting sleeve, connecting pipe, and flexible hose. As the gas passes through the connecting pipe, it is filtered by the filter cartridge and filter frame. These dust particles will not enter the mass spectrometry analysis chamber of the main body and will not interfere with the detection of helium ions. Even minor leaks in the pipeline can be accurately identified, thereby improving the accuracy of the detection.

The invention provides a multi-energy multi-ion linear accelerator for isotope production. The multi-energy multi-ion linear accelerator comprises an ion source system located on a main path of a beam, a radio frequency quadrupole accelerator and a multi-section drift tube linear acceleration unit, the ion source system comprises a plurality of ion sources, deflection magnets are arranged between two adjacent sections of the drift tube linear acceleration unit and on the downstream of the last section, and the deflection magnets can be switched between an opening state and a closing state and are used for enabling beam current to deflect to a sub-path of the beam current in the opening state and enabling the beam current to deflect to a sub-path of the beam current in the closing state. Therefore, each deflection magnet serves as a beam extraction position when being opened, and extraction of beams with different energies is realized. The multi-energy multi-ion linear accelerator for isotope production can output ion beams with different energies through different beam extraction positions, and accelerated ions can be protons, deuterium ions, helium ions, carbon ions, nitrogen ions, oxygen ions and other ions. Therefore, isotope production types are enriched, and isotope production efficiency is improved.

The invention discloses a system and a process for thinning a diamond gallium ion machining damaged layer by a helium ion beam layer by layer, and belongs to the technical field of micro-nano machining, the system comprises a sample pretreatment module, a focused gallium ion beam rough machining module, a focused helium ion beam layer-by-layer decreasing machining module and a damaged layer characterization module, through a helium ion beam layer-by-layer decreasing processing mode, a diamond damaged layer caused by a gallium ion beam can be obviously thinned, and the thickness of the damaged layer is reduced from about 200 nm to 20 nm or below. According to the system and the process for thinning the gallium ion processing damaged layer of the diamond layer by layer by using the helium ion beam, the beam current and the dosage of the focused helium ion beam are regulated and controlled to be reduced layer by layer along the processing times, and the gradient distribution of the diamond damaged layer is accurately matched, so that the effect of only thinning the damaged layer without introducing new damage is realized; and finally, a low-defect and high-flatness diamond structure is obtained, and a foundation is laid for subsequent electronic device manufacturing.

This method for manufacturing a semiconductor device (10) comprises: irradiating a semiconductor device (10) with helium ions, the semiconductor device (10) being provided with a substrate (12) made of silicon carbide, a first-conductivity-type buffer layer (14) on a first surface 12a of the substrate (12), and a first-conductivity-type drift layer (16) that is on the buffer layer (14) and has a lower impurity concentration than that of the buffer layer (14); and forming point defects in the buffer layer (14). The maximum density of point defects formed in the buffer layer (14) due to the irradiation with helium ions is at least 2 × 1016 / cm3, and the density of point defects formed in the drift layer (16) due to the irradiation with helium ions is 2 × 1017 / cm3 or less.

A method of chemically etching an underlying material includes selectively modifying the underlying material (e.g., a silicon-containing material, like silicon carbide) using lightweight ions (e.g., hydrogen ions, helium ions, etc.) to form a modified region of the underlying material and chemically etching the modified region using a halogen-containing etchant gas (e.g., a fluorine-containing gas, like sulfur hexafluoride). The underlying material is exposed through openings in a resist layer, which may contain carbon and / or a metal, such as a chemically amplified resist or a metal oxide resist. The selective modification step may implant the lightweight ions into the underlying material. Plasma may be used during one or both of the selective modification step and the chemical etching step. Bias power may be applied during the selective modification step and may be higher than bias power applied during the chemical etching step, which may be zero.

A carbon film formation method includes applying a carbon film raw material onto a substrate using a spin coating method to form a carbon-containing film on the substrate, and heating and firing the carbon-containing film to form a carbon film, and irradiating the carbon film with helium ions.

This invention provides a high-frequency system for proton and helium ion therapy devices, comprising: a low-level control system including an amplitude control module, a frequency control module, and a phase control module, which control a vector modulation signal; a power source system that receives the vector modulation signal and provides a power signal; and a high-frequency cavity system including a high-frequency cavity, which is a vacuum chamber pipe fitted with multiple magnetic alloy rings; wherein, by controlling the vector modulation signal, the resonant frequency of the high-frequency cavity is adjusted according to the cyclotron frequency of the particles, so that protons and helium ions can be stably accelerated each time they pass through the high-frequency cavity. This invention also provides a corresponding method of use. The system of this invention simultaneously accelerates protons and helium ions within the same synchrotron accelerator.

The utility model relates to the technical field of trace phosphine analysis, in particular to a trace phosphine detection device for a disilane synthesis and purification process, which comprises a six-way valve, a first interface, a second interface, a third interface, a fourth interface, a fifth interface and a sixth interface are annularly and sequentially arranged on the six-way valve at equal intervals, the second interface is a carrier gas inlet, and the third interface is a carrier gas outlet. The fifth interface is a sample inlet, and the sixth interface is an emptying hole; the two ends of the first air pipe are communicated with the first connector and the fourth connector respectively, and a quantitative pipe is arranged on the first air pipe; one end of the second gas pipe is communicated with the third interface, the second organ is provided with a chromatographic column and a DID helium ionization detector, and the chromatographic column is arranged between the third interface and the DID helium ionization detector. When trace phosphorane is analyzed, impurity concentration changes can be rapidly detected, a balanced (stable state) analysis value can be rapidly measured, and the method has the advantages of being accurate in quantification, low in detection limit and short in analysis period.

The invention discloses a concrete three-phase structure helium ion irradiation damage simulation and characterization method and device, and the method comprises the steps: building a concrete multi-phase component model, respectively simulating the irradiation damage behaviors of helium ions in each single phase, and carrying out the integration through a volume fraction weighted average method to obtain the irradiation damage distribution of the whole concrete. By adopting the technical scheme of the invention, the displacement damage, energy deposition and vacancy distribution key parameters of the concrete under helium ion irradiation can be quantitatively represented, and a theoretical basis and data support are provided for life evaluation and anti-irradiation design of a nuclear facility concrete structure.

The application discloses a kind of powder refinement processing equipment and ceramic powder refinement method based on ion beam injection, it is related to ceramic material preparation technical field, including: material cavity, helium ion emitter;First hopper is arranged in material cavity, the lateral recess that is recessed to the outside of material cavity is arranged on the inner wall of material cavity, and the lateral recess is used to support the powder in material cavity;Material cavity can be vertically rotated by driving motor, and the powder in material cavity can be transported to the top of material cavity;Helium ion emitter is arranged in the side of the bottom of first hopper, for emitting lateral helium ion beam below the bottom of first hopper;The application can inject helium ion beam in ceramic powder coarse material, cooperate annealing and grinding process method, can be prepared with the particle size of submicron grade superfine ceramic powder finished product, the particle size distribution of prepared ceramic powder finished product is narrow, and uniformity is good, no waste liquid discharge, meet green manufacturing and sustainable development concept, save energy consumption, and the degree of refinement is high.

The invention discloses a manufacturing method of a single particle radiation resistant power MOSFET, and belongs to the field of semiconductor devices. According to the method, helium ion implantation is carried out after contact hole corrosion and before metal deposition so as to introduce defects; helium ion implantation uses a masking layer etched by a contact hole and is self-aligned implantation; and after metal deposition and metal etching, annealing is carried out to stabilize the defects. The position of the defect is located in the body region, below the contact hole and the source region and outside the space charge region of the working voltage, so that the leakage current of the device is not increased. The helium ion injection defect has the advantages of high position precision, good temperature stability, no electric activity and no influence on the doping concentration. According to the invention, defects are introduced into the power MOSFET body, the service life of carriers is shortened, the recombination of excess carriers is enhanced, and the recovery current of single-particle irradiation is reduced, so that single-particle reinforcement is realized, and the method has the advantages of simple process flow, low device power consumption and high switching speed.

The invention belongs to the field of magnetic confinement controlled nuclear fusion, and discloses a numerical calculation method and system for phase space distribution function evolution of helium ions in magnetic confinement deuterium-tritium fusion, and the method comprises the steps: carrying out the numerical stability verification based on a self-adaptive CFL condition, and determining a proper step size value, carrying out discretization processing on the input data by utilizing a multi-dimensional grid; establishing a Fokker-Planck equation containing friction, energy diffusion, position space transport and helium ion generation source items, and converting the Fokker-Planck equation into a difference format capable of being solved in a recursive manner through a finite difference method; in the calculation process, a corresponding boundary condition is set in combination with physical reality, a difference format of a boundary area is corrected, self-consistent updating is carried out on the main ion density based on a quasi-neutral condition, and information of evolution of a helium ion phase space distribution function along with time is obtained; and introducing an energy boundary judgment method related to the equivalent temperature of helium ash, distinguishing the helium ash from high-energy particles, and outputting a result of evolution of density profiles of the helium ash and the high-energy particles along with time.

The invention discloses an integrated device and method for detecting gas dissolved in oil based on a micro chromatographic chip, and belongs to the field of state monitoring of power equipment. The device comprises a gas source generation module, a gas path valve control module, a micro chromatographic chip, a quantitative loop, a helium ion detector, a signal conditioning circuit, a Raspberry Pi diagnosis module and a display device, the gas source generation module generates mixed gas of carrier gas and gas dissolved in oil; the gas path valve control module comprises related valves and pumps and can automatically switch a sample injection stage and a test stage; the micro chromatographic chip is used for separating gas by using a long snake-shaped micro channel and a HayeSepDip stationary phase; the signal conditioning circuit regulates and controls the chip temperature, amplifies the signal and controls the pump valve; through integrated design, the problems that traditional gas chromatography depends on laboratories and existing oil chromatography equipment is large in size and high in cost are solved, field real-time detection is adapted, oxygen can be automatically discharged to eliminate interference, multiple diagnosis methods are fused to reduce misinformation, the operation and maintenance cost is reduced, and the operation safety of a transformer is guaranteed.