50 results about "Helium ions" patented technology

The invention discloses simulated lunar soil for engineering and a preparation process thereof, the simulated lunar soil has a multilayer structure design, and comprises a basic mineral structure layer, a surface activity control layer and a simulated space environment effect layer. The basic mineral structure layer is prepared from modified olivine, titanium-rich basalt, rare earth doped plagioclase, calcium phosphate minerals, nano iron particles and vitreous minerals according to a specific proportion; the surface activity control layer adopts an atomic layer deposition technology to form a nano oxide layer on the surface of the mineral particles; the simulated space environment effect layer is formed through low-pressure helium ion bombardment and ultraviolet irradiation. The preparation process comprises the steps of intelligent graded crushing, mineral phase change control, surface modification and activation treatment, multi-parameter synchronous regulation and control and the like. The simulated lunar soil can be produced in a customized mode according to different lunar area characteristics, the matching degree with real lunar soil physical characteristics exceeds 90%, the ground testing precision of lunar exploration equipment is remarkably improved, and technical support is provided for lunar on-site resource utilization and lunar base construction.

The invention discloses a tungsten fluff thickness prediction method based on a surface temperature rise condition, and belongs to the technical field of tungsten surface nanostructure evolution under helium ion irradiation. The method comprises the following steps: establishing a tungsten fluff growth rate prediction formula considering a growth-annealing synergistic effect on the basis of an adsorption particle migration mechanism and an annealing kinetics theory; constructing an SURO-FUZZ model in order to simulate the growth dynamic process of tungsten villus and obtain simulation data required by fitting unknown parameters of a prediction formula; through comparison with an experiment, the accuracy of the SURO-FUZZ model is verified; and fitting unknown parameters of a prediction formula through simulation data of SURO-FUZZ. According to the analysis formula provided by the invention, two inhibition effects are fully considered, compared with the prior art, the integrating degree with experimental data under the long-term irradiation condition is higher, and compared with numerical simulation, the consumption of computing resources is greatly reduced, and the growth conditions of tungsten fluff under different surface temperature conditions can be efficiently predicted.

The invention provides a proton helium ion treatment device. The proton helium ion treatment device comprises an injector, an accelerator, a rotating rack, a treatment head, a beam distribution system and a six-dimensional treatment bed which are sequentially arranged in the conveying direction of a beam. The injector comprises a hydrogen ion source and a helium ion source which can be switched; the treatment head and beam distribution system comprises an integrated scanning magnet, a position ionization chamber, a dose ionization chamber, a ridge-shaped filter and a range shifter which are installed on a treatment head support and sequentially arranged in the beam conveying direction, and the integrated scanning magnet is used for beam deflection in the transverse X direction and the transverse Y direction at the same time. A cone beam CT system is further fixedly installed on the rotating rack, and precise positioning and positioning correction of a patient are achieved in combination with the six-dimensional mechanical arm treatment bed. The proton helium ion treatment device can meet the requirement for high precision of patient positioning in ion treatment, ion treatment with optional proton helium ions can be achieved, and the treatment system is more compact through the design of the integrated scanning magnet.

The invention discloses a local platinum doping method for a fast soft recovery diode, and relates to the technical field of semiconductor manufacturing. According to the local platinum doping method for the fast soft recovery diode, hydrogen ions and helium ions are injected to form prefabricated atom vacancy defects, platinum atoms are induced to gather and stay in a prefabricated vacancy defect area, and local platinum atom doping is achieved. The performance advantages of traditional global platinum doping life control and local hydrogen / helium ion life control on the silicon-based fast recovery diode are organically combined, and prefabricated vacancy defects are flexibly formed at different depths through hydrogen ions and helium ions, so that precise local doping of platinum atoms is realized; meanwhile, the fast soft recovery diode has the performance advantages of good reverse recovery characteristic, high softness factor, low reverse recovery voltage change rate, good long-term reliability, low electric leakage, high device junction temperature and the like.

The invention relates to a method and a product for eliminating helium bubble defects in nuclear power steel, which comprises the following steps of: treating the nuclear power steel which is damaged by helium ion irradiation to generate helium bubble gathering and surface hardening by pulse current, eliminating the helium bubble defects, recovering the surface hardness of the nuclear power steel, and realizing dynamic self-repairing of irradiation damaged tissues of the nuclear power steel. The method is suitable for pulse current elimination of irradiation helium bubble defects of nuclear power steel such as austenitic stainless steel and austenite-ferrite duplex stainless steel, and is also suitable for pulse current elimination of irradiation helium bubble defects of any metal material. Experiments prove that helium bubbles induced by irradiation cause serious hardening of the surface of the material, and after the helium bubbles are eliminated through pulse current treatment, nanoindentation tests show that the hardness of the material is remarkably reduced and basically returns to the original level before irradiation. The method has the advantages of short treatment time and low energy consumption, and can effectively prolong the service life of key components such as nuclear-grade main pipelines.

The invention relates to a helium ionization detector based on an MEMS technology, and the detector comprises a substrate and a detection structure, the substrate comprises a substrate, a first bonding layer and a second bonding layer, the first bonding layer and the second bonding layer are respectively bonded to two opposite sides of the substrate in a first direction, and the first direction is perpendicular to the surface of the substrate; the detection structure comprises a detection channel, an air inlet assembly and an air outlet and detection assembly. The detection channel penetrates through the substrate along a first direction; the air inlet assembly is located at an air inlet port, close to the first bonding layer, of the detection channel and is in sealed connection with the air inlet port; the gas outlet and detection assembly is located at a gas outlet port, close to the second bonding layer, of the detection channel and is in sealed connection with the gas outlet port; a sealed space defined by the air inlet assembly, the air outlet and detection assembly and the detection channel is a cavity of the detection structure. The sealing performance between different film layers in the substrate and the sealing performance of the cavity are improved, and the sensitivity of the helium ionization detector is improved.

According to the preparation method of the helium ion detector provided by the invention, ideal electric field distribution can be obtained by arranging the collecting electrode in the closed chamber, and the ion collecting efficiency can be effectively improved by arranging the bias electrode in the closed chamber, so that the helium ion detector can also have a lower detection limit on the premise of a smaller volume, and the detection cost is reduced. The detection sensitivity is relatively high. In addition, the helium ion detector adopts a sandwich structure and is suitable for being combined with a chromatographic column for use or being integrated with a micro-chromatographic column in a monolithic manner.

The invention discloses a silicon-based substrate structure for semiconductor epitaxial stress regulation and control and a preparation method of the silicon-based substrate structure, and belongs to the technical field of semiconductor materials. The method comprises the following steps: firstly prefabricating vacancy gradient in a silicon body by adopting silicon self-ions or inert heavy ions, and then performing helium ion implantation with a relatively low dose, so that helium atoms selectively nucleate in the formed vacancy gradient and grow through unified annealing to obtain a pore volume fraction which continuously changes along with depth. According to the invention, through a division cooperation mechanism of'vacancy prefabrication 'and'helium pore-forming', a coupling relationship between vacancy and gas is not generated by single helium injection any more, so that a pore gradient and a Young modulus gradient which can be designed and continuously adjusted in the thickness direction are realized, the controllability, stability and process compatibility of a pore-forming structure are remarkably improved, and the production cost is reduced. By constructing a modulus gradient structure in the silicon body, the problems of wafer warping, device layer cracking, bonding failure and the like are reduced.

The utility model relates to an injection and extraction static deflector for a proton helium ion therapy synchrotron, which comprises a cutting plate, a cathode, a first support plate, a second support plate and a vacuum cylinder, the first support plate and the second support plate are positioned on the same plane, the cutting plate is movably mounted in the vacuum cylinder through the first support plate, and the cathode is arranged in the vacuum cylinder. The cathode is a titanium electrode and is movably installed in the vacuum cylinder through a second supporting plate. According to the injection and extraction electrostatic deflector for the proton helium ion treatment synchrotron, the positions and deflection angles of the deflector can be respectively adjusted as required through the first supporting plate and the second supporting plate which can be independently adjusted, the cutting plate and the cathode; therefore, different precession distances, field intensities and deflection angles required by proton and helium ion injection and extraction are realized.

The invention relates to the technical field of gene detection devices, in particular to a silicon nitride nanopore device and a preparation method and application thereof based on an angstrom hole, a helium ion beam is used for irradiating the surface of a silicon nitride film of a cleaned silicon nitride chip to obtain a silicon nitride chip with an angstrom hole, and the silicon nitride chip is used for detecting the gene detection device. And after cleaning and drying, carrying out dielectric breakdown to obtain a nanopore with a required size, measuring the obtained nanopore again by using the patch clamp, and drying by using nitrogen to obtain the silicon nitride nanopore device. According to the silicon nitride nanopore device and the preparation method and application thereof based on the angstrom pore, the generation position of the nanopore is controlled in a helium ion beam irradiation area through an angstrom pore confinement intrinsic carrier effect and an avalanche effect and breakdown critical defect density correlation mechanism; and then the formation, evolution and size regulation and control of the nanopore are tracked in real time through dielectric breakdown ion current, and controllable manufacturing of the nanopore with the extremely small size is achieved.

The application relates to a synchrotron for a proton-helium ion therapy device, which comprises eight dipole deflection magnets connected in sequence through eight straight-line sections to form a ring structure, the deflection angle of the eight dipole deflection magnets is 45 degrees, and the maximum magnetic field strength is 2.4T; the eight straight-line sections comprise four long straight-line sections and four short straight-line sections, which are used for accelerating the helium ion beam from an injection energy of 8-10 MeV / u to 200-235 MeV / u and leading out for helium ion therapy, or accelerating the proton beam from an injection energy of 8-10 MeV to 200-750 MeV and leading out for proton therapy. According to the synchrotron for the proton-helium ion therapy device, the structure is very compact, unnecessary gaps and magnet elements are reduced, the circumference of the whole accelerator is reduced, the space of the synchrotron is effectively utilized, and the construction cost of the device and the building is reduced to the maximum extent, and the treatment cost is reduced.

The invention discloses a surface in-situ treatment method for a tungsten first wall of a fusion device, which comprises the following steps: heating the tungsten first wall to a preset temperature interval, and the preset temperature interval is [700 DEG C, 1300 DEG C]; and on the basis of a preset irradiation mode, helium injected in advance is processed, helium plasma is generated, the incident ion energy of the helium plasma reaching the first wall of tungsten is controlled to be within a preset energy interval, and the preset energy interval is [20 eV, 100 eV]. And according to the helium plasma, the first tungsten wall in the preset temperature interval is subjected to irradiation treatment till the accumulated helium ion fluffy quantity of the first tungsten wall meets a preset condition, a tungsten fluff layer and helium bubbles are generated on the first tungsten wall in situ, and the preset condition is that the accumulated helium ion fluffy quantity is larger than the accumulated helium ion fluffy quantity. In this way, the tungsten fluff layer can prevent helium plasma from being polluted by tungsten ions by reducing the net sputtering yield of tungsten. And the helium bubbles can inhibit recrystallization nucleation and grain growth at high temperature.

The preparation method of the vanadium alloy comprises the steps that vanadium powder and alloy raw materials are mixed in proportion to form a mixture; placing the mixture in a vacuum furnace for pretreatment; smelting the mixture in a smelting furnace to form a melt; and the melt is cooled and demoulded, and the vanadium alloy is formed. The method is simple and efficient, and the formed vanadium alloy can effectively improve the helium ion sputtering resistance, so that the safety and reliability of the device are ensured.

The application discloses a surface in-situ processing method of a tungsten first wall of a fusion device, comprising: heating the tungsten first wall to a preset temperature interval, wherein the preset temperature interval is [700 DEG C, 1300 DEG C]. Based on a preset irradiation mode, pre-injected helium gas is processed to generate a helium plasma and control incident ion energy of the helium plasma reaching the tungsten first wall to be in a preset energy interval, wherein the preset energy interval is [20 eV, 100 eV]. According to the helium plasma, the tungsten first wall in the preset temperature interval is irradiated and processed until a cumulative helium ion fluence of the tungsten first wall meets a preset condition, so as to in-situ generate a tungsten villus layer and a helium bubble on the tungsten first wall, wherein the preset condition is that the cumulative helium ion fluence is greater than 1.0 x 10 22 He / m 2. In this way, the tungsten villus layer can reduce the net sputtering yield of tungsten and avoid contamination of the helium plasma by tungsten ions. The helium bubble can inhibit recrystallization nucleation and grain growth at high temperature.

The invention discloses a helium-induced damage resistant and corrosion resistant medium-entropy alloy coating and a preparation method thereof. The FeCrAlN medium-entropy alloy coating which is uniform in component, compact in structure and good in combination with a matrix is successfully prepared on the surface of the matrix such as austenitic stainless steel by adopting an unbalanced magnetron sputtering technology and accurately regulating and controlling key process parameters such as nitrogen partial pressure and sputtering power. The coating comprises the following elements in percentage by weight: 20 to 30 at.% of Fe, 20 to 30 at.% of Cr, 20 to 30 at.% of Al, 10 to 35 at.% of N, and the balance of Fe and inevitable impurities. The thickness is 2-4.5 [mu] m, and the material has a nanocrystalline / amorphous composite structure. On the basis of the medium-entropy alloy design concept, the nitrogen element is introduced, the components and the structure are optimized, effective control over chemical components, phase composition and the microstructure of the coating can be achieved, the comprehensive performance of the coating in a severe service environment is remarkably improved, and the coating especially has excellent helium ion irradiation resistance and liquid lead and bismuth corrosion resistance; and the service life of key components such as the cladding pipe can be effectively prolonged, and the operation safety of a reactor is improved.

The invention provides a method for improving helium ion irradiation resistance of the surface of a body-centered cubic iron material, which comprises the following steps of: (1) surface pretreatment: polishing the surface to be processed by adopting 180-800 # abrasive paper in sequence, so that the surface is bright and flat; and (2) laser surface remelting: carrying out laser surface remelting treatment on the polished pure iron sample by adopting pulse laser. And (3) high-temperature helium ion irradiation: performing high-temperature helium ion irradiation on the prepared sample. The irradiation conditions are as follows: the helium ion type is He < 2 + >, the temperature is 750 DEG C, the incident ion energy is 300 keV, the ion fluence is 1 * 10 < 17 > cm <-2 > and the like. According to the method, laser remelting is carried out on the surface of the body-centered cubic iron material, a large number of dislocation and fine crystal grains are obtained on the near surface layer, growth and aggregation of helium bubbles are inhibited in the high-temperature helium ion irradiation process, and therefore the brittle fracture and failure risks caused by helium bubble coarsening are reduced, and the irradiation resistance of the body-centered cubic iron material is improved.

The invention discloses a method and a system for deducting a hydrogen background of a helium mass spectrometer leak detector, and belongs to the technical field of helium mass spectrometer leak detectors. The positive and negative bias voltages are applied to the original acceleration voltage, so that the maximum value and the minimum value of the hydrogen ion signal are obtained, and the background value of the hydrogen ion signal at the peak value of the helium ion signal when the bias voltage is not applied can be estimated through the maximum value and the minimum value of the hydrogen ion signal. And the total ion signal is deducted from the total ion signal when the bias voltage is not applied, so that the detection result of the helium ion signal is more accurate.

To prevent a lamination defect in an SiC semiconductor device from expanding during current application.SOLUTION: A method of manufacturing a semiconductor device 10 comprises irradiating the semiconductor device 10 with helium ions to form a point defect in a buffer layer 14, where the semiconductor device comprises a substrate 12 made of silicon carbide, the buffer layer 14 of a first conductivity type on a first surface 12a of the substrate 12, and a drift layer 16 of the first conductivity type which is on the buffer layer 14 and has lower impurity concentration than the buffer layer 14. The maximum density of the point defect formed in the buffer layer 14 by the irradiation with the helium ions is 2×1016 / cm3 or larger, and the density of a point defect formed in the drift layer 16 by the irradiation with the helium ions is 2×1017 / cm3 or smaller.SELECTED DRAWING: Figure 2

Methods open etch stop layers in an integrated environment along with metallization processes. In some embodiments, a method for opening an etch stop layer (ESL) prior to metallization may include etching the ESL with an anisotropic process using direct plasma to form helium ions that are configured to roughen the ESL for a first duration of approximately 10 seconds to approximately 30 seconds, forming aluminum fluoride on the ESL using remote plasma and nitrogen trifluoride gas for a second duration of approximately 10 seconds to approximately 30 seconds, and exposing the ESL to a gas mixture of boron trichloride, trimethylaluminum, and / or dimethylaluminum chloride at a temperature of approximately 100 degrees Celsius to approximately 350 degrees Celsius to remove aluminum fluoride from the ESL and a portion of a material of the ESL for a third duration of approximately 30 seconds to approximately 60 seconds.

A method for post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate comprises: positioning the substrate having the silicon nitride (SiN)-based dielectric film formed thereon in a processing chamber; and exposing the silicon nitride (SiN)-based dielectric film to a helium-containing high-energy, low-dose plasma in the processing chamber. The energy of the helium ions in the helium-containing high-energy, low-dose plasma is between 1 eV and 3.01 eV, and the flux density of the helium ions in the helium-containing high-energy, low-dose plasma is between 5×10 15 ions / cm 2 · second and 1.37×10 16 ions / cm 2 · Between seconds.

The present invention relates to a method for transferring a thin film onto a support substrate, comprising: providing a bonded structure comprising a donor substrate and a support substrate assembled by direct bonding at their respective front surfaces according to a bonding interface extending along a main plane, the donor substrate being substantially parallel to the main plane and comprising a buried brittle surface formed by implanting light species, the implanting light species comprising co-implantation of hydrogen ions at a first dose and a first implantation energy and helium ions at a second dose and a second implantation energy; and applying a thermal breakdown treatment to the bonded structure to induce spontaneous separation along said plane associated with the growth of microcracks in the buried brittle surface by thermal activation, the separation resulting in the transfer of the thin film from the donor substrate onto the support substrate. The implanting light species is notable in that it further comprises a localized implantation of hydrogen ions with a third dose and a third energy to form a localized overdosed region in the buried brittle surface. The third dose corresponds to more than three times the first dose, with the local area of ​​overdosing constituting the starting point of separation.

The present invention addresses the problem of forming a carbon film having high etching resistance. The solution is that a carbon film raw material is coated on a substrate by a spin coating method to form a carbon-containing film on the substrate, the carbon-containing film is heated and fired to form a carbon film, and the carbon film is irradiated with helium ions.

The application discloses a helium ion gas chromatograph suitable for SF6 decomposition product detection, wherein sample gas in a quantitative ring is introduced into a rear-stage adsorption column through carrier gas, the adsorption column contains sufficient kdhf-0 type molecular sieve, after the sample gas and the carrier gas are left in the adsorption column for a set time, SO2 gas is completely adsorbed, and then the gas containing only helium and SF6 gas after adsorption is blown to a rear-stage chromatographic column for separation through the carrier gas; after a set time, a heating rod in the adsorption column is started to heat the molecular sieve to 100 DEG C for desorption, the desorbed SO2 gas is introduced into a small gas storage tank through the carrier gas, after a set time, a valve is controlled to make the carrier gas stop entering the adsorption column, a vacuum pump is started to exhaust all residual gas in the adsorption column into the gas storage tank, then the vacuum pump is stopped, the carrier gas is controlled to flow through the adsorption column again, the gas in the gas storage tank is pushed into the rear-stage chromatographic column, and the SO2 gas in the gas is introduced into a PDHID detector, so that the ultra-low concentration SO2 gas concentration is accurately detected without SF6 gas interference.

The invention discloses a system for analyzing the component content of a decomposition product of sulfur hexafluoride gas or sulfur hexafluoride / nitrogen mixed insulating gas in electrical equipment and a use method of the system, and belongs to the field of gas chromatography detection. In particular to an analysis system for the component content of a decomposition product of sulfur hexafluoride gas or sulfur hexafluoride / nitrogen mixed insulating gas in electrical equipment and a use method of the analysis system. The invention aims to solve the technical problem that the existing electrical equipment insulating gas decomposition product component detection system cannot comprehensively identify the types of decomposition products of SF6 gas or SF6 / N2 mixed insulating gas. According to the invention, the analytical column, the conductivity detector, the hydrogen flame ionization detector and the flame photometric detector are designed, so that analysis and detection of trace components of gas can be realized; the device can effectively detect multiple components of decomposition products of SF6 gas and SF6 / N2 mixed insulating gas, is high in accuracy and sensitivity, and is low in cost, quick and efficient compared with a helium ionization detection system.

The invention provides a method for reducing YBCO nanowire warping voltage through ion irradiation, and belongs to the technical field of single photon detection. According to the method, a focused ion beam (FIB) is adopted to carry out helium (He) ion beam local periodic irradiation, an extra pinning center is introduced into the ultrathin YBCO nanowire, the movement of vortex in the nanowire is limited, the distribution uniformity of vortex pinning points is improved, and the warping voltage before voltage jump of the YBCO nanowire can be effectively reduced; meanwhile, the ion radius of He ions is small, the diffusion range of the He ions in the ultra-thin YBCO nanowire is smaller, and the influence of ion diffusion on the superconducting performance of the ultra-thin YBCO nanowire can be effectively reduced.

The present invention provides an SOI wafer and a manufacturing method thereof, a stripping layer is formed in a device substrate by sequentially performing a hydrogen ion implantation process and a helium ion implantation process, and the ion beam current of the helium ion implantation process is less than 0.315 times the implantation energy of the hydrogen ion implantation process; a peeling process is performed to peel a portion of the thickness of the device substrate along the peeling layer. As the ion beam current of the helium ion implantation process is smaller than 0.315 times of the implantation energy of the hydrogen ion implantation process, helium ions can be uniformly distributed in the stripping layer, and the dissipation of the helium ions and the hydrogen ions is reduced or avoided, so that the foaming effect of a stripping interface during stripping treatment is improved, and the stripping efficiency is improved. And further, the surface roughness of the device substrate after stripping treatment is reduced, so that the warping degree of the SOI wafer is less than 28 microns, and the surface roughness is less than or equal to 0.25.

The utility model relates to a rotating rack of a helium ion treatment device, which comprises a first rolling ring, a second rolling ring, a connecting assembly, a first supporting mechanism and a second supporting mechanism, and is characterized in that the first rolling ring is supported by the first supporting mechanism and can rotate relative to the first supporting mechanism; the second rolling ring is supported by the second supporting mechanism and can rotate relative to the second supporting mechanism; the first rolling ring and the second rolling ring are fixedly connected through the connecting assembly, a driving mechanism is arranged on the first supporting mechanism, and the driving mechanism is connected with the first rolling ring and used for driving the first rolling ring and the second rolling ring to rotate; the first rolling ring is provided with a treatment head, the connecting assembly is provided with a beam transmission assembly, and the beam transmission assembly is connected with the treatment head. The rotating rack of the helium ion treatment device is simple in structure, small in size, light in weight and low in manufacturing cost.

The present invention provides a sample for helium ion microscope imaging quality correction and a manufacturing method thereof. The sample includes a substrate, a conductive layer, and polystyrene microsphere particles. The conductive layer covers the substrate, and the polystyrene microsphere particles are dispersed and fixed on the conductive layer; or it includes a bulk conductive material and polystyrene microsphere particles, and the polystyrene microsphere particles are dispersed and fixed on the bulk conductive material. Since helium ions have a strong penetration ability in polystyrene materials and the average penetration depth exceeds the microsphere size, the polystyrene microsphere particles are not easily damaged such as melting and deformation under helium ion irradiation, and their spherical geometric shape with clear boundaries can sensitively reflect the ion beam focusing problem, which is beneficial to the correction of the ion beam focusing imaging quality. At the same time, a manufacturing method of a sample for helium ion microscope ion beam focusing imaging quality correction is provided. The method has simple steps and low process requirements, and is suitable for mass production.

The utility model provides a proton helium ion treatment device. The proton helium ion treatment device comprises an injector, an accelerator, a rotating rack, a treatment head, a beam distribution system and a six-dimensional treatment bed which are sequentially arranged along the transportation direction of a beam. The injector comprises a hydrogen ion source and a helium ion source which can be switched; the treatment head and beam distribution system comprises an integrated scanning magnet, a position ionization chamber, a dose ionization chamber, a ridge-shaped filter and a range shifter which are installed on a treatment head support and sequentially arranged in the beam conveying direction, and the integrated scanning magnet is used for beam deflection in the transverse X direction and the transverse Y direction at the same time. A cone beam CT system is further fixedly installed on the rotating rack, and precise positioning and positioning correction of a patient are achieved in combination with the six-dimensional mechanical arm treatment bed. The proton helium ion treatment device can meet the requirement for high precision of patient positioning in ion treatment, ion treatment with optional proton helium ions can be achieved, and the treatment system is more compact through the design of the integrated scanning magnet.

The invention provides a proton CT system and an imaging method of a proton helium ion treatment device. The proton helium ion treatment device comprises an injector, an accelerator system, a high-energy transport line, a rotating rack, a beam distribution system, a treatment head and a proton CT detection imaging system. The injector comprises a hydrogen ion source and a helium ion source which can be switched; the proton CT detection imaging system comprises a front position detector, a rear position detector, a proton residual energy detector and a data acquisition and imaging system, so as to obtain the distribution of the relative blocking capability of an imaging object in a three-dimensional space according to the detection result of the detectors. The invention mainly provides a corresponding proton CT imaging method so as to realize a proton helium ion selectable particle treatment method. According to the treatment device, the problem of range errors caused by making a treatment plan based on CT images in traditional particle treatment is solved.