Method for manufacturing double-layer SiN nanopore structure for DNA base sequence detection

Abstract

The invention provides a method for manufacturing a double-layer SiN nanopore structure for DNA base sequence detection. The method comprises the following steps: firstly, providing a silicon substrate serving as a base plate; depositing a structural layer consisting of three layers of nano films on surfaces of two sides of the substrate by using an LP-CVD process, wherein the three layers of nano films are respectively SiN/SiO2/SiN upwards from the substrate; depositing a sacrificial layer on the surface of the structural layer by using the LP-CVD process; etching the structural layer and the sacrificial layer on one side of the substrate so as to form a substrate release window; etching the silicon substrate by using an alkali solution so as to obtain a self-supported nano film consisting of the structural layer and the sacrificial layer; etching the sacrificial layer above the self-supported nano film so as to obtain a suspended structural layer; etching the suspended structural layer by using helium ion beams to obtain nano through holes; finally etching SiO2 in the structural layer by using buffered hydrofluoric acid, thereby obtaining the double-layer SiN nanopore structure which is partitioned by SiO2 cavities. The method is simple in process, and due to compatibility with a CMOS process, the double-layer SiN nanopore structure is relatively good in expansibility, meanwhile can be repeatedly used, and has relatively wide use prospects in the field of biochemical detection.

Description

technical field [0001] The invention belongs to the technical field of preparation and application of micro-nano devices, and relates to a method for manufacturing a double-layer nanopore biomolecular detection device, in particular to a double-layer SiN nanopore structure for DNA base sequence detection and a manufacturing method thereof. Background technique [0002] The use of nanopores (nanopore) to identify the base sequence of DNA molecules has been studied for 20 years. When the DNA molecule passes through the nanopore under the action of the electric field force, the amplitude of the ion current in the nanopore is changed, and the base is recognized by the current amplitude. Because the bases between the bases are very small, at 0.34nm. Therefore, scientists have been pursuing thinner nanopores, such as nanopores made of ultra-thin materials such as graphene, molybdenum disulfide, and boron nitride. However, none of them considered the effect of thermal motion of D...

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Problems solved by technology

[0004] Technical problem: In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for making a double-layer SiN nanopore structure for DNA base sequence detectio

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