The invention discloses a directional controllable growth method of high-purity
polycrystalline silicon, which relates to the technical field of material
science and engineering, and comprises the following steps: realizing
impurity atomic-
scale control and non-contact
smelting through a four-order synergistic process, performing
electromagnetic suspension melting on industrial
silicon materials in an
inert coating crucible (1420-1450 DEG C, less than or equal to), separating melt from the inner wall of the
crucible, and thoroughly blocking an
oxygen-carbon
pollution source;
plasma targeted
impurity removal is conducted, specifically, pulse
plasma beams (50-200 W / cm, 10-30 min) with the ratio of 4: 1 are adopted for bombarding the surface of the melt, and
boron and
phosphorus impurities are removed through in-situ gasification;
magnetic field coupling directional solidification is conducted, the axial
temperature gradient is controlled to be 30-50 DEG C / cm, the solidification rate is controlled to be 0.5-2 cm / h, a transverse alternating
magnetic field (0.1-0.5 T, 5-20 Hz) is overlaid to inhibit dendritic
crystal deflection, and impurities are driven to be enriched towards the top; and 10-15% of an enrichment layer at the top is
cut off, so that a high-purity
silicon ingot with
oxygen less than or equal to 0.1 ppm, carbon less than or equal to 0.1 ppm and
boron phosphorus less than or equal to 0.05 ppb is obtained, and the standard of a 3nm
chip substrate is met.