34 results about "Ion microscopy" patented technology

In one aspect the invention provides a gas field ion microscope that includes an ion source in connection with an optical column, such that an ion beam generated at the ion source travels through the optical column and impinges on a sample. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the invention provides methods for using the ion microscope to analyze samples and enhancing the performance of a gas field ion source.

Scanning Transmission Ion Microscope. The microscope includes a bright helium ion source to generate an ion beam and a focusing electrostatic optical column to focus the ion beam. A translation stage supports a sample to receive the focused ion beam and a detector responds to ions transmitted through the sample to generate a signal from which properties of the sample may be displayed.

A charged particle beam system, a sample processing method, and a semiconductor inspection system enable an accurate detection of a particle in a film without causing LMIS contamination and allow observation with an electron microscope quickly. A particle 65 causing a defect in a film 66 that has been detected with a separate optical inspection system is detected with an optical microscope 43 based on position information acquired by the separate optical inspection system. A sample 31 is processed with a nonmetal ion beam 22 so as to allow observation of the particle 65 with an electron microscope image or an ion microscope image, or ultimate analysis of the particle 65 with an EDX.

The present invention provides a laminated ceramic electronic component in which the internal electrode layer inside the layered product is bonded to the external electrode and is capable of ensuring a strong fixing force between the external electrode and the stacked body. The laminated ceramic electronic component includes a rectangular parallelepiped laminate (12) in which a plurality of dielectric layers (14) and a plurality of internal electrode layers (16) are laminated, and a laminated body (12) is formed on both end faces of the stacked body (12) (22a, 22b) of the plating layer (26a, 24b) and the coating (26a, 26b). In the case where the cross section including the base electrode layers (24a, 24b) is observed by the FIB SIM image (concentrated ion beam scanning ion microscope), a plurality of Cu crystals and glass, crystal elements having different crystal orientations The average value of the length is 3 [miu] or less.

The invention mainly belongs to the field of oil and gas exploration and development, and particularly relates to a three-dimensional imaging method of shale nanopores with a focused ion beam-helium ion microscope. The method adopts the ultra-high resolution imaging function of a helium ion microscope and the cutting function of the focused ion beam to perform ultra-high resolution three-dimensional imaging of the nanopores of the shale organic matter, which has the characteristics of high resolution, thin slice, and uniform and stable slice. The method makes up for the disadvantage of the technology combined traditional scanning electron microscope with focused ion beam that cannot perform three-dimensional imaging for nanopores. The method can visually show the characteristics of pores over 3nm in shale organic matter such as three-dimensional spatial structure, morphology, distribution, connectivity and porosity, which has great significance for scientifically explaining the mechanism of shale gas occurrence and migration.

The invention provides a semiconductor material measuring device and a method for in-situ measurement of interface defect distribution, which belong to the field of semiconductor test. The semiconductor material measuring device comprises a reaction chamber, a sample platform, a focused ion beam microscope system and an electronic beam induced current measuring device. The method includes: firstly, stripping partial surfaces of semiconductor samples of multilayer heterostructures by the aid of the focused ion beam microscope system of the semiconductor material measuring device; secondly, depositing electrodes in situ; and thirdly, measuring interface defects by the aid of the electronic beam induced current measuring device. By the aid of the semiconductor material measuring device and the method, the problem that multilayer heterogeneous interfaces are measured in a single-layer manner in the prior art is solved, layer-by-layer dissection and measurement are realized, and working efficiency is greatly improved.

The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image.

[Problem] To provide a rolled copper foil which has a moderately roughened surface whereby the foil has improved handleability, and which has excellent flexibility, is less apt to suffer surface scratches when being handled, and has satisfactory surface etchability. [Solution] A rolled copper foil which has a ratio of the surface roughness (Ra) to the foil thickness (t), Ra/t, of 0.004-0.007. When a 25-[mu]m-long cross-section of the copper foil which extends along a direction parallel to the rolling direction of the copper foil is produced using a focused ion beam and a scanning ion microscope image of the cross-section is examined, then the average value (Lsa) of the depths (Ls) to which shear zones extend in the foil-thickness direction satisfies the following relationship with the thickness (t) of the copper foil: 0.01<=Lsa/t<=0.4.

The invention belongs to the technical field of oil-gas exploration, aims to research development characteristic laws of organic matter pores and obtain reliable characterization information of organic matter pore connectivity, and particularly relates to a shale organic matter pore connectivity classification characterization method. A scanning electron microscope is used for scanning a shale sample in a preset imaging area and obtains a two-dimensional image of the shale sample; pore parameters of each organic matter in the two-dimensional image are extracted by adopting Avizo software; a type value of the organic matter set is obtained according to the pore parameters; three-dimensional reconstruction is performed on each type of organic matter set by adopting a focused ion beam-helium ion microscope to obtain an organic matter three-dimensional reconstructed body; avizo software is adopted to obtain pore connectivity parameters; and on the basis of the pore connectivity parameter, an overall connectivity evaluation index of the shale organic matter pores is obtained. According to the method, on the basis of organic matter pore morphology quantitative classification, three-dimensional connectivity characterization of sub-10nm-level pores can be achieved.

The invention discloses an electron beam divergence angle measuring device and a preparation method and a measuring method thereof. The device comprises a fluorescent screen and tungsten micro-nano patterns, tungsten hexacarbonyl is deposited on the fluorescent screen through a helium ion microscope to form the tungsten micro-nano patterns, the tungsten micro-nano patterns are a plurality of concentric circles, and the circle centers of the concentric circles are located in the center of the fluorescent screen. A tungsten micro-nano pattern is constructed on a fluorescent screen by utilizing ion-assisted deposition of a helium ion microscope, when the fluorescent screen is moved, the spot shape and the size of an electron beam hit on the fluorescent screen are changed, and an electron beamspot and an electron beam divergence angle are directly measured according to the size and the size of the tungsten micro-nano pattern. The device has the advantages of multiple functions, high measurement precision, simple operation and the like; the preparation method has the advantages of high precision, easiness in control, simple process and the like.

The embodiment of the invention provides an ion probe mass spectrometer and an imaging method thereof. Specifically, the ion probe mass spectrometer comprises a compression deflection plate configuredto compress a secondary ion beam generated by scanning and bombarding a sample through a primary ion beam by applying a first voltage according to a time sequence, a mass spectrometer configured to analyze the compressed secondary ion beam, a decompression deflection plate configured to decompress the secondary ion beam passing through the mass spectrometer in time series by applying a second voltage, and an imaging assembly configured to acquire the secondary ion beam image decompressed by the decompression deflection plate. The frequency of the first voltage is the same as that of the second voltage; By means of the technical scheme, on the basis of an ion microscope mode, the secondary ion beam is compressed and decompressed, the mass resolution is improved, meanwhile, the point-to-point microscopy function can be achieved, and the advantage of being high in imaging efficiency is achieved.