35 results about "Ion microscopy" patented technology

Scanning Transmission Ion Microscope. The microscope includes a bright helium ion source to generate an ion beam and a focusing electrostatic optical column to focus the ion beam. A translation stage supports a sample to receive the focused ion beam and a detector responds to ions transmitted through the sample to generate a signal from which properties of the sample may be displayed.

Transmission ion microscope. A bright light ion source generates an ion beam that is focused on a sample by an electrostatic condenser lens means. An objective lens focuses the ion beam transmitted through the sample to form an image. A projector lens enlarges the image and a phosphor screen receives the enlarged image to generate light allowing visualization of the image.

In a method of making a lamina specimen, first and second ion beams are simultaneously used to sputter etch first and second side walls of a lamina region at the same time under first and second ion beam conditions. A scanning ion microscope observation of the lamina region is made using the second ion beam while sputter etching of the first and second side walls is continued using the first ion beam until the thickness of the lamina has a predetermined value.

In one aspect the invention provides a gas field ion microscope that includes an ion source in connection with an optical column, such that an ion beam generated at the ion source travels through the optical column and impinges on a sample. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the invention provides methods for using the ion microscope to analyze samples and enhancing the performance of a gas field ion source.

A charged particle beam system, a sample processing method, and a semiconductor inspection system enable an accurate detection of a particle in a film without causing LMIS contamination and allow observation with an electron microscope quickly. A particle 65 causing a defect in a film 66 that has been detected with a separate optical inspection system is detected with an optical microscope 43 based on position information acquired by the separate optical inspection system. A sample 31 is processed with a nonmetal ion beam 22 so as to allow observation of the particle 65 with an electron microscope image or an ion microscope image, or ultimate analysis of the particle 65 with an EDX.

This aluminum alloy sheet has increased BH properties under low-temperature short-time-period conditions after long-term room-temperature aging by means of causing aggregates of specific atoms to be contained having a large effect in BH properties, the distance between atoms being no greater than a set distance, and containing either Mg atoms or Si atoms measured by 3D atom probe field ion microscopy in a 6000 aluminum alloy sheet containing a specific amount of Mg and Si.

The invention relates to a wafer defect crosscutting observation device which comprises a focusing ion gun, a scanning electronic gun, a focusing ion microscope, a scanning electronic microscope, a light source emitter and an optical imaging unit. The focusing ion gun is arranged in a first plane which is perpendicular to the surface of a wafer. The scanning electronic gun is arranged at the position, different from the position of the focusing ion gun, in the first plane, and a first angle included angle is formed between the emitting direction of the scanning electronic gun and the emitting direction of the focusing ion gun. The focusing ion microscope and the focusing ion gun are integrally arranged in the first plane. The scanning electronic microscope and the scanning electronic gun are integrally arranged in the first plane. The light source emitter is arranged in a second plane which is perpendicular to the surface of the wafer. The optical imaging unit is arranged in the second plane, and a second angle included angle is formed between the optical path direction of the optical imaging unit and the direct of incident beams of the light source emitter. An included angle larger than zero degree is formed between the second plane and the first plane. The wafer defect crosscutting observation device can directly achieve positioning of wafer defects, simultaneous crosscutting and observation and even analysis, working processes are simple, operation is convenient, and precision is higher.

[Problem] To provide a rolled copper foil whose surface is moderately rough to improve handleability and has excellent bendability, which hardly causes scratches on the surface during handling of the copper foil and has good surface etching characteristics. [Solution] Rolled copper foil whose surface roughness Ra and the ratio Ra / t to the thickness t of the copper foil is 0.004 or more and 0.007 or less, using a focused ion beam to produce a length of 25 μm in the direction parallel to the rolling of the copper foil When observing the scanning ion microscope image of the section, the average value Lsa of the depth Ls of the shear band in the thickness direction of the copper foil satisfies 0.01≦Lsa / t≦0.4 with respect to the thickness t of the copper foil relation.

The invention mainly belongs to the field of oil and gas exploration and development, and particularly relates to a three-dimensional imaging method of shale nanopores with a focused ion beam-helium ion microscope. The method adopts the ultra-high resolution imaging function of a helium ion microscope and the cutting function of the focused ion beam to perform ultra-high resolution three-dimensional imaging of the nanopores of the shale organic matter, which has the characteristics of high resolution, thin slice, and uniform and stable slice. The method makes up for the disadvantage of the technology combined traditional scanning electron microscope with focused ion beam that cannot perform three-dimensional imaging for nanopores. The method can visually show the characteristics of pores over 3nm in shale organic matter such as three-dimensional spatial structure, morphology, distribution, connectivity and porosity, which has great significance for scientifically explaining the mechanism of shale gas occurrence and migration.

The embodiments of the present specification provide an ion probe mass spectrometer and an imaging method thereof. Specifically, the ion probe mass spectrometer includes: a compression deflection plate, configured to compress the secondary ion beam generated by scanning the sample through the primary ion beam and bombarding the sample by applying a first voltage in time series; the mass spectrometer is configured to The compressed secondary ion beam is analyzed; a decompression deflection plate is configured to decompress the secondary ion beam passing through the mass spectrometer in time sequence by applying a second voltage; wherein the first voltage and the second voltage and an imaging assembly configured to acquire an image of the secondary ion beam decompressed by the decompression deflector. Through such a technical solution, on the basis of the ion microscope mode, the mass resolution can be improved by compressing and decompressing the secondary ion beam, and at the same time, it can satisfy the point-to-point microscopy function, and has the advantage of high imaging efficiency.