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Semiconductor material measuring device and method for in-situ measurement of interface defect distribution

A technology for measuring device and interface defect, applied in the direction of measuring device, material analysis using wave/particle radiation, analyzing materials, etc., to achieve the effect of improving work efficiency and avoiding pollution and oxidation

Inactive Publication Date: 2012-06-13
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

However, there is no method to measure the microstructure and defects of the heterostructure interface in situ with EBIC and other measurement methods after processing the sample with the FIB microscope system.

Method used

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  • Semiconductor material measuring device and method for in-situ measurement of interface defect distribution
  • Semiconductor material measuring device and method for in-situ measurement of interface defect distribution
  • Semiconductor material measuring device and method for in-situ measurement of interface defect distribution

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no. 2 example

[0024] figure 2 Shown is a flowchart of a second embodiment of the method for in-situ measurement of interface defect distribution provided by the present invention, including:

[0025] Step 301, placing a semiconductor sample with a multilayer structure on the sample stage;

[0026] Step 302, using a focused ion beam microscope system to peel off a region of the first layer of the semiconductor sample with a multilayer structure until the surface of the second layer is exposed;

[0027] Step 303, using a gas injection system to respectively deposit an electrode on the exposed surface of the first layer and the exposed surface of the second layer;

[0028] Step 304, measuring the defects of the interface between the first layer and the second layer by using an electron beam induced induced current measuring device.

[0029] image 3 Shown is a schematic diagram of step 301 according to the second embodiment of the present invention. A semiconductor sample 120 with a multilayer structu...

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Abstract

The invention provides a semiconductor material measuring device and a method for in-situ measurement of interface defect distribution, which belong to the field of semiconductor test. The semiconductor material measuring device comprises a reaction chamber, a sample platform, a focused ion beam microscope system and an electronic beam induced current measuring device. The method includes: firstly, stripping partial surfaces of semiconductor samples of multilayer heterostructures by the aid of the focused ion beam microscope system of the semiconductor material measuring device; secondly, depositing electrodes in situ; and thirdly, measuring interface defects by the aid of the electronic beam induced current measuring device. By the aid of the semiconductor material measuring device and the method, the problem that multilayer heterogeneous interfaces are measured in a single-layer manner in the prior art is solved, layer-by-layer dissection and measurement are realized, and working efficiency is greatly improved.

Description

Technical field [0001] The invention relates to the field of semiconductor measurement, in particular to a method for dissecting samples layer by layer and measuring the distribution of interface defects in situ. Background technique [0002] The Electron Beam Induced Current (EBIC) device, as an accessory of the electron microscope, has been used to measure the junction position, width and interface defects of interfaces such as PN junctions. The measurement principle is that when a high-energy electron beam is injected into the PN junction interface, a large number of electron-hole pairs will be generated at the interface due to the ionization excitation of the electron beam. Under the action of the built-in electric field, these electrons and holes will flow to N area and P area generate a strong current signal at the junction area, so that the position and width of the PN junction can be measured. If there is a defect in the junction area, the current signal at the defect loc...

Claims

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Application Information

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IPC IPC(8): G01N23/225
Inventor 曾雄辉徐耿钊黄凯刘争晖邱永鑫钟海舰樊英民王建峰周桃飞徐科
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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