51 results about "Atom probe" patented technology

The invention relates to the technical field of computer science, in particular to a stamping prediction method based on a multi-machine learning model and an automatic compensation device.The stamping prediction method comprises the steps that firstly, a sheet microstructure and material characteristics are obtained through a transmission electron microscope and an atomic probe tomography technology, and then finite element simulation sampling is conducted; a data set is expanded by using an adaptive algorithm, multiple models are constructed and trained to obtain a final springback prediction model, an automatic compensation device is embedded to realize automatic compensation, and the automatic compensation device covers visual parameter input, embedded springback prediction, springback compensation calculation and an automatic control module. Parameters can be visually input, springback can be accurately predicted, a compensation value can be calculated, and the process can be adjusted. The method aims at solving the problems that in the high-strength plate stamping process, due to springback, the size and shape of a part deviate from the design requirement, and a traditional prediction and compensation technology is insufficient in precision and efficiency.

The invention relates to a partial discharge detection system based on Rydberg atoms in the field of partial discharge detection of electrical equipment, the system comprises an optical path frequency stabilization module, an atom probe, a photoelectric detection module, a controller module and a power frequency synchronous trigger signal circuit, the optical path frequency stabilization module locks 852.35 nm probe light and pump light frequency less than 509.53 nm through SAS and EIT technologies, and the atomic probe is used for detecting the frequency of the probe light. Inducing transition from a cesium atom ground state to a first excited state to a Rydberg state; under the effect of partial discharge pulse, the atomic probe outputs a modulated EIT transmission spectrum signal, after photoelectric conversion and filtering, the controller module analyzes the amplitude and phase information of the pulse in combination with a power frequency synchronizing signal, the upper computer generates a PRPD diagram to analyze the discharge correlation, the detection sensitivity of the system reaches-50dBm, the frequency band of 300MHz-2GHz is covered, the dynamic range is greater than or equal to 50dB, the equivalent height is greater than or equal to 20mm, and the discharge correlation is greater than or equal to 20mm. Broadband and high-resolution detection is achieved, the problem of phase synchronization is solved, and the device is suitable for high-voltage environment on-line monitoring.

The invention provides a neutral atom beam generation device and a neutral atom detector calibration device. The neutral atom beam generation device comprises an ion beam generation device used for emitting a mixed beam; the particle energy testing device comprises an incident end, a first emergent end, a second emergent end and an acquisition device, the incident end is used for receiving the mixed beam; the incident end is communicated with the second emergent end through an arc-shaped channel, and a deflection magnetic field is arranged at the arc-shaped channel, so that positive ions in the mixed beam flow deflect and bombard the acquisition device; the acquisition device is used for acquiring a first bombardment position of positive ions; the first emergent end is used for emitting a first ion beam; the processing device is connected with the collecting device and used for determining the deflection radius of the positive ions according to the first bombardment position and determining the energy of the positive ions and the neutral atoms according to the deflection radius; and the particle screening device is used for absorbing positive ions and negative ions in the first ion beam so as to emit a neutral atom beam.

The invention relates to a preparation method of a three-dimensional atom probe sample, which comprises the following steps: S1, imaging a sample under a scanning electron microscope, and marking an interested area on the surface of the sample; s2, cutting the region to expose the section of the sample; s3, performing ion beam irradiation on the cross section so as to generate bright and dark contrast beneficial to observation on two sides of a crystal boundary in the cross section; s4, according to the position of the contrast, cutting the sample to form a slice sample containing a grain boundary; and S5, annularly cutting the sheet sample to form a needle point sample containing the crystal boundary. According to the preparation method, efficient and accurate positioning is provided, the sample preparation time is effectively shortened, and the sample preparation success rate is increased.

The systems, methods, and communication cables taught herein provide cryogenic cooling, high voltage connections, and other electrical connections to a sample on a stage within a vacuum environment while still enabling stage motion in at least five degrees of freedom with minimal stage vibration to achieve new or improved measurement applications in situ within a microscope, such as in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, and in-situ microscopy. Such as atomic probe chromatography and testing of quantum computing components. The connection cables taught herein combine connections into a single connection cable within an outer spring suitable for use in ultra-high vacuum. These connection cables are also shaped and configured to maintain at least a minimum spacing distance from components in the surrounding environment (e.g., chamber walls and other equipment) to prevent mechanical, electrical and thermal shortcuts.

The invention discloses a sample clamping auxiliary device for three-dimensional atom probe detection. The sample clamping auxiliary device comprises a rack, and a mounting piece is arranged over the left side of the rack. The feet of the three-dimensional atom probe support are placed in the connecting disc, the main gear is driven to rotate through the output end of the transmission motor, all the clamping pieces are driven to synchronously move towards the position close to the circle center of the connecting disc, the feet of the three-dimensional atom probe support are clamped, installation is rapidly achieved, operation of workers is not needed, and the work efficiency is improved. When a sample needs to be leveled, the first movable arm, the second movable arm, the third movable arm and the fourth movable arm are all kept in a rotating state by pushing or retracting the output ends of the air cylinders, so that the movable seat moves to drive the movable rod to rotate, and the output ends of a plurality of groups of air cylinders can be respectively controlled; and the installation piece can be kept in a horizontal state, convenience and rapidness are achieved, and the requirements of workers are further met.

Disclosed are micro-pillar structures that include diamond micro-tips and the preparation of diamond micro-tips. The diamond micro-tips are useful, for example, in chemical analytical measurements such as atom probe tomography.

The invention belongs to the technical field of three-dimensional atomic probes, and specifically is a stirring device for electrolytic polishing of a three-dimensional atomic probe, comprising a stirring base, a motor, a vertical rod, a synchronous wheel, a synchronous belt, a turntable, a driving magnet, an electrolytic barrel, a tempered glass half shell, a sealing ring and a driven magnet; the motor drives the synchronous wheel to rotate, and through the transmission of the synchronous belt, a plurality of synchronous wheels are synchronously rotated, which drives a plurality of vertical rods to rotate synchronously, drives the turntable to rotate, and causes two driving magnets on the turntable to rotate, and through the mutual attraction between the driving magnet and the driven magnet, drives a stirring bar to rotate in the middle of the bottom surface of the electrolytic barrel, drives the electrolyte inside the electrolytic barrel to rotate, so that the electrolyte always keeps a moving mixed state, so that the concentration of each part of the electrolyte is kept consistent, and then the electrolytic corrosion degree of the surface of the sample is kept consistent, thereby reducing the probability of burrs on the surface of the three-dimensional atomic probe and improving the quality of the three-dimensional atomic probe.

The invention provides an electric field measurement method based on polymorphic Rydberg atoms, which comprises the following steps: two beams of detection light and two beams of coupling light with different frequencies oppositely enter two atom probes respectively, and atoms in the two atom probes are excited from a ground state to a Rydberg state, after initial EIT transmission peaks respectively appear on the transmission spectrum of the two beams of detection light, the two inner plate electrodes are used for generating an electric field and gradually increasing the electric field intensity, and EIT transmission spectrum data under different electric field intensities are output; performing data labeling and preprocessing on the EIT transmission spectrum data, and outputting spectrum data to be identified; and then, identifying the spectrum data to be identified, and outputting a judgment result of the electric field intensity in a regression manner. The problems that in an existing scheme, the strong field measurement accuracy and the electric field resolution are insufficient, and the measurement bandwidth is difficult to further improve are solved.

The application provides an L-shaped direct flight type three-dimensional atom probe ultra-high vacuum system, and relates to the technical field of three-dimensional atom probes.The system comprises a sample feeding chamber, a transition chamber and an analysis chamber, and each chamber is connected to an independent vacuum pumping system.A lifting type sample storage bin is arranged in the transition chamber to temporarily store and switch the sample.A first horizontal vacuum magnetic rod and a second vertical vacuum magnetic rod intersect in the transition chamber to form an L-shaped transmission path.The second vacuum magnetic rod vertically sends the sample stage upward into the analysis chamber, so that the sample needle tip directly aims at the center of the local electrode.A high vacuum isolation valve with a gas locking device is arranged between the transition chamber and the analysis chamber.The application can eliminate the complicated mechanical alignment and calibration steps, greatly improve the sample switching and pumping efficiency, and has a quick isolation protection mechanism, thereby significantly improving the safety and reliability of the system.

There are provided techniques for analyzing an atom probe tomography data set obtained from a tip-shaped sample. The techniques include defining analysis sub-volumes in the atom probe tomography data set; performing a fast Fourier transform (FFT) on each of the analysis sub-volumes to obtain a signal in a Fourier domain; identifying at least one FFT peak in the signal in the Fourier domain, each FFT peak being indicative of an expected crystal feature in the corresponding analysis sub-volume; continuously and automatically calculating an image compression factor and a radius of the tip-shaped sample, based on identified crystal features, the identified crystal features being obtained from a collection of expected crystal features; and reconstructing a three-dimensional model of the tip-shaped sample. Said reconstructing includes comparing the identified crystal features with calibration data; and dynamically adjusting the image compression factor and the radius of the tip-shaped sample.

A detection method comprises the steps of providing a semiconductor structure which comprises a first doped region, and doping ions are arranged in the first doped region; the semiconductor structure is sampled, a test sample is obtained, the test sample comprises a test end and a power connection end, and the test end of the test sample comprises a first doped region; and obtaining a three-dimensional profile of the distribution of the doped ions in the first doped region by adopting atomic probe tomography. The method can improve the performance of the semiconductor structure.

The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.

A positioner for analytical instruments (e.g., atom probe microscopes or other nanoscale microscopes) includes a major carriage translatable with respect to a vacuum chamber wall, and a minor carriage connected to the major carriage by multiple spaced actuators allowing the minor carriage to translate and / or tilt with respect to the major carriage. Arms then extend from the minor carriage through the vacuum chamber wall to connect to an instrument. The instrument may be rapidly extended or retracted within the vacuum chamber via its connection to the major carriage, and may be more finely translated and / or tilted via its connection to the minor carriage. A damping arrangement isolates the instrument from vibration.

A tomographic atom probe includes an analysis chamber intended to analyze a sample of material in the form of a nanotip mounted on an anti-vibration support, the nanotip being brought to a temperature of between 0 kelvin and ambient temperature, the nanotip being biased at an adjustable voltage of between 1 kV and 15 kV, the analysis chamber comprising a position-sensitive and time of flight-sensitive ion detector. The atom probe comprises a generator for generating high-peak-intensity single-cycle ultrashort terahertz pulses, the analysis chamber comprising optical means for focusing the terahertz pulses, the focusing of the terahertz pulses causing the atoms of the nanotip to evaporate through the field effect without thermal effects. The terahertz pulses are generated by a femtosecond pulsed laser emitting very high-power ultrashort optical pulses at a high rate.

Embodiments of the present invention relate to the technical field of micro-area microscopic analysis of materials, and specifically provide a multifunctional sample stage for transmission electron microscopy (TEM) and in-situ atom probe tomography (APT) testing. The sample stage includes: a support stage, which includes a substrate having a first-stage stepped layer and a second-stage stepped layer; a metal pressing sheet, which can be fixed to the first-stage stepped layer on one hand, and can abut against a silicon wafer carrying a sample provided on the second-stage stepped layer on the other hand; a sample mounting stage assembly, which can be disposed on the second-stage stepped layer, and a metal mesh carrying a sample can be fixed to the sample mounting stage assembly. With such a configuration, the sample stage of the present invention can not only meet the requirements of conventional APT analysis, but also meet the requirements of TEM-APT in-situ analysis. In addition, the present invention also has the advantages of being easy to disassemble and being able to be quickly transferred between TEM and APT instruments without damaging the sample.

A dynamic multi-wavelength and sample voltage atom probe tomograph feedback control system includes a pulsed radiation source, an ion detector, a high voltage supply, and an analyzer. The pulsed radiation source produces first coherent light and second coherent light. The ion detector receives first emitted ions and second emitted ions from the atom probe sample. The high voltage supply produces a high voltage bias. The analyzer receives the ion signal from the ion detector and dynamically produces first pulsed radiation source control signal, second pulsed radiation source control signal, and high voltage bias control based on the ion signal. The system dynamically adjusts the optical wavelengths and sample voltage in real-time with atom probe tomography feedback by using the ion signal from the ion detector to dynamically produce first pulsed radiation source control signal, second pulsed radiation source control signal, and high voltage bias control.

To provide multilayer ceramic electronic component having excellent life characteristics, multilayer ceramic electronic component includes: dielectric layers containing dielectric material having perovskite structure of general formula ABO3-α; internal electrode layers containing nickel as main component; and first intermediate regions containing copper. According to three-dimensional atom probe analysis performed along first axis, first intermediate regions are regions that are contained in a region where nickel concentration is <70 at % and B-site element concentration is ≥20 at %, and that are sandwiched between first boundary part at which B-site element concentration is 20 at % and second boundary part at which copper concentration peak appears. Copper concentration at copper concentration peak is ≥1.0 at % and ≤5.0 at %. Concentration C calculated by formula (1) is ≥10 at % and <35 at %. In formula (1), C(Cu) represents copper concentration at copper concentration peak, C(B) represents B-site element concentration, and C(A) represents A-site element concentration.C=C⁡(Cu)+C⁡(B)-C⁡(A)(1)

The invention relates to the technical field of material analysis, for example, relates to a processing device and method for three-dimensional atom probe samples, and the processing device comprises a sample bearing module which is provided with sample stations, and each sample station is used for placing a three-dimensional atom probe sample; the vacuum sealing pipe is used for accommodating the sample bearing module; the cooling module is provided with a cavity used for containing cooling liquid, the cavity is provided with a sealing pipe station, and the sealing pipe station is used for containing a vacuum sealing pipe. Based on the treatment device, a full-flow vacuum and low-temperature protection mechanism can be provided for the treatment process of the three-dimensional atom probe sample, the accuracy of subsequent material phase change analysis and component characterization can be remarkably improved, and it is ensured that three-dimensional atom probe data can truly reflect the microstructure characteristics of the three-dimensional atom probe sample.

The application provides a neutral atom beam generating device and a neutral atom detector calibration device. The neutral atom beam generating device comprises: an ion beam generating device for emitting a mixed beam; a particle energy testing device comprising an incident end, a first exit end, a second exit end and a collection device; the incident end is used for receiving the mixed beam; the incident end and the second exit end are communicated through an arc-shaped channel, and a deflection magnetic field is arranged at the arc-shaped channel to deflect positive ions in the mixed beam and hit the collection device; the collection device is used for obtaining a first hitting position of the positive ions; the first exit end is used for emitting a first ion beam; a processing device connected with the collection device is used for determining a deflection radius of the positive ions according to the first hitting position, and determining the energy of the positive ions and neutral atoms according to the deflection radius; and a particle screening device is used for absorbing the positive ions and negative ions in the first ion beam to emit a neutral atom beam.

A method for determining a three-dimensional atomic distribution of a sample having a tip, during an atom probe tomography process. The method accounts for the tip not being axial symmetric and not having a hemispherical shaped apex throughout the evaporation process.

The application relates to the technical field of electromagnetic detection, in particular to a Rydberg atom receiving device and method capable of resisting electromagnetic interference. The device comprises two parallel-plate waveguide atom probes integrated with optical fiber air chambers, an 852nm frequency stabilization module, a 509nm frequency stabilization module and three microwave sources; the three microwave sources are respectively used for generating local field signals, signal field signals and interference field signals; one alkali metal atom air chamber is embedded in each of the two parallel-plate waveguide atom probes, wherein the first alkali metal atom air chamber in the first parallel-plate waveguide atom probe receives the local field signals, the signal field signals and the interference field signals, mixes the local field signals and the signal field signals to generate intermediate frequency signals, and the second parallel-plate waveguide atom probe is used for realizing signal anti-interference through compensation of alternating current Stark energy shift; the device has simple structure and high sensitivity, can effectively improve the anti-interference capability of microwave signal detection, and ensures the signal detection precision and reliability of the device in a complex electromagnetic environment.

The invention provides a loading device for radioactive sample TEM-3DAP combined characterization. The loading device comprises a loading sample fixing table, a sample clamping mechanism and a guide structure, the sample clamping mechanism is used for clamping an FIB carrying net with a radioactive three-dimensional atom probe tip sample; the sample clamping mechanism comprises a first clamping part and a second clamping part, the first clamping part is arranged on the second clamping part and rotates relative to the second clamping part, and the second clamping part is arranged on the loading sample fixing table, so that the sample clamping mechanism is mounted on the loading sample fixing table; the guide structure is arranged on the loading sample fixing table and is used for guiding the FIB carrying net with the radioactive three-dimensional atom probe tip sample to slide to the second clamping part. The guiding structure and the sample clamping mechanism form a guiding and positioning integrated channel, and the sample clamping mechanism rapidly clamps an FIB carrier net with a radioactive three-dimensional atom probe tip sample, so that the sample loading difficulty is greatly reduced, and the sample loading time is shortened.

The invention discloses a method and a system for improving mass spectrum resolution of a three-dimensional atom probe of a metal material based on laser polarization and a field enhancement effect. The method comprises the following steps: preparing a to-be-detected metal material into a nano-scale needle point sample, placing the nano-scale needle point sample on a three-dimensional atom probe sample table, adjusting the polarization direction of the nano-scale needle point sample to be consistent with the axial direction of a sample needle point by taking linear polarization laser as an excitation source, gradually adjusting the distance between the sample needle point and a focusing light spot of the laser through a three-dimensional moving platform, and detecting. In order to realize the method, the invention also provides a related system which comprises a linear polarization laser source, an optical polarization adjustment module, a three-dimensional mobile platform, a three-dimensional atom probe main body and a data acquisition and processing device. According to the method, through laser polarization direction adjustment, near-field positioning and parameter optimization, a laser field enhancement effect is used for replacing a traditional heat effect driving mechanism, the technical problem that the resolution ratio is low due to the heat effect is effectively solved, and the resolution ratio of the three-dimensional atom probe mass spectrum is greatly improved.

The disclosure relates to the technical field of micro-analysis of materials, and provides a multifunctional sample stage for in-situ testing with transmission electron microscope (TEM) and atom probe tomography (APT). The multifunctional sample stage includes: a support stage comprising a base body, the base body having a first-step tier and a second-step tier; a metal pressing plate, wherein a first portion of the metal pressing plate is fixed to the first-step tier, and a second portion of the metal pressing plate is engageable with a silicon wafer carrying specimens disposed on the second-step tier; and a sample mounting stage assembly, which comprises a concave sample stage and a convex fixing stage, is positionable on the second-step tier, wherein a metal support grid for carrying specimens can be fixed to the sample mounting stage assembly.

The invention provides a laminated ceramic electronic component having excellent life characteristics and a method for manufacturing the same. The laminated ceramic electronic component has: a plurality of dielectric layers including a dielectric having a perovskite structure represented by the general formula ABO3-alpha; a plurality of internal electrode layers containing nickel as a main component; and a first intermediate region containing copper, the first intermediate region being a region sandwiched between a first boundary portion in which the concentration of a B-site element is 20 at% and a second boundary portion which is a peak of copper concentration in a region in which the nickel concentration is less than 70 at% and the concentration of the B-site element is 20 at% or more when three-dimensional atom probe analysis is performed along the first axis. When the copper concentration at the copper concentration peak is 1.0 at% to 5.0 at%, and the copper concentration at the copper concentration peak position is C (Cu), the concentration of the B-site element is C (B), and the concentration of the A-site element is C (A), the concentration C obtained by formula (1) is 10 at% to less than 35 at%, C = C (Cu) + C (B)-C (A)... (1), where C (Cu) is the copper concentration at the copper concentration peak position, C (B) is the concentration of the B-site element, and C (A) is the concentration of the A-site element.

The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.

The invention relates to the technical field of material characterization, in particular to a three-dimensional atom probe data reconstruction method suitable for an aspheric needle tip sample, and overcomes the limitation of a three-dimensional reconstruction method based on spherical hypothesis in processing needle tip samples in complex shapes. Through observation and fitting of dynamic morphology evolution of a multi-phase material in a laser pulse excitation mode in an experiment process, accurate reconstruction of an aspheric needle tip sample is realized, and the accuracy degree of subsequent sample microstructure morphology and component information analysis is improved. According to the optimized three-dimensional reconstruction method, the precision of three-dimensional atom probe data reconstruction can be effectively improved, and the analysis precision of morphology, components and the like of microstructures such as a GP region and a grain boundary in a material is remarkably improved.

This invention relates to the field of computer science and technology, specifically to a stamping prediction method and automatic compensation device based on multiple machine learning models. First, the microstructure and material characteristics of the sheet metal are obtained using transmission electron microscopy and atomic probe tomography. Then, finite element simulation sampling is performed, and an adaptive algorithm is used to expand the dataset. Multiple models are constructed and trained to obtain the final springback prediction model. Finally, an automatic compensation device is embedded to achieve automatic compensation. The automatic compensation device includes modules for visual parameter input, embedded springback prediction, springback compensation calculation, and automatic control. It allows for intuitive parameter input, accurate springback prediction, calculation of compensation values, and adjustment of the process. The purpose of this invention is to solve the problem of insufficient accuracy and efficiency of traditional prediction and compensation technologies in addressing the deviation of part dimensions and shapes from design requirements caused by springback during the stamping process of high-strength sheet metal.

The utility model discloses a cladding type heating system capable of being controlled in a segmented manner, which relates to the technical field of detection equipment and comprises a heating assembly composed of a switching mechanism and a cladding mechanism. The coating heating mantle adopts a sectional design, the coating heating mantle is divided into a plurality of independent and controllable heating jackets along the axial direction of the probe, each section of heating jacket can independently supply power and adjust temperature, finer temperature control is realized, and the coating heating mantle and the atom probe are designed in a split manner, so that the coating heating mantle and the atom probe are more stable in temperature control. The atomic probe and the coating heating cover can be separated through the switching mechanism, independent detection and use of the atomic probe are facilitated, the detection result is accurate, and the problems that a heating structure of existing atomic probe detection equipment is fixed outside the probe and cannot be separated from the probe during detection, the accuracy of the detection result is easily affected, and the detection efficiency is high are solved. And a heating structure does not have a segmented heating function, so that independent temperature control cannot be realized, and the limitation during detection is relatively high.