32 results about "Atom probe" patented technology

The invention provides a neutral atom beam generation device and a neutral atom detector calibration device. The neutral atom beam generation device comprises an ion beam generation device used for emitting a mixed beam; the particle energy testing device comprises an incident end, a first emergent end, a second emergent end and an acquisition device, the incident end is used for receiving the mixed beam; the incident end is communicated with the second emergent end through an arc-shaped channel, and a deflection magnetic field is arranged at the arc-shaped channel, so that positive ions in the mixed beam flow deflect and bombard the acquisition device; the acquisition device is used for acquiring a first bombardment position of positive ions; the first emergent end is used for emitting a first ion beam; the processing device is connected with the collecting device and used for determining the deflection radius of the positive ions according to the first bombardment position and determining the energy of the positive ions and the neutral atoms according to the deflection radius; and the particle screening device is used for absorbing positive ions and negative ions in the first ion beam so as to emit a neutral atom beam.

The systems, methods, and communication cables taught herein provide cryogenic cooling, high voltage connections, and other electrical connections to a sample on a stage within a vacuum environment while still enabling stage motion in at least five degrees of freedom with minimal stage vibration to achieve new or improved measurement applications in situ within a microscope, such as in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, in-situ microscopy, and in-situ microscopy. Such as atomic probe chromatography and testing of quantum computing components. The connection cables taught herein combine connections into a single connection cable within an outer spring suitable for use in ultra-high vacuum. These connection cables are also shaped and configured to maintain at least a minimum spacing distance from components in the surrounding environment (e.g., chamber walls and other equipment) to prevent mechanical, electrical and thermal shortcuts.

The application provides an L-shaped direct flight type three-dimensional atom probe ultra-high vacuum system, and relates to the technical field of three-dimensional atom probes.The system comprises a sample feeding chamber, a transition chamber and an analysis chamber, and each chamber is connected to an independent vacuum pumping system.A lifting type sample storage bin is arranged in the transition chamber to temporarily store and switch the sample.A first horizontal vacuum magnetic rod and a second vertical vacuum magnetic rod intersect in the transition chamber to form an L-shaped transmission path.The second vacuum magnetic rod vertically sends the sample stage upward into the analysis chamber, so that the sample needle tip directly aims at the center of the local electrode.A high vacuum isolation valve with a gas locking device is arranged between the transition chamber and the analysis chamber.The application can eliminate the complicated mechanical alignment and calibration steps, greatly improve the sample switching and pumping efficiency, and has a quick isolation protection mechanism, thereby significantly improving the safety and reliability of the system.

There are provided techniques for analyzing an atom probe tomography data set obtained from a tip-shaped sample. The techniques include defining analysis sub-volumes in the atom probe tomography data set; performing a fast Fourier transform (FFT) on each of the analysis sub-volumes to obtain a signal in a Fourier domain; identifying at least one FFT peak in the signal in the Fourier domain, each FFT peak being indicative of an expected crystal feature in the corresponding analysis sub-volume; continuously and automatically calculating an image compression factor and a radius of the tip-shaped sample, based on identified crystal features, the identified crystal features being obtained from a collection of expected crystal features; and reconstructing a three-dimensional model of the tip-shaped sample. Said reconstructing includes comparing the identified crystal features with calibration data; and dynamically adjusting the image compression factor and the radius of the tip-shaped sample.

The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.

A positioner for analytical instruments (e.g., atom probe microscopes or other nanoscale microscopes) includes a major carriage translatable with respect to a vacuum chamber wall, and a minor carriage connected to the major carriage by multiple spaced actuators allowing the minor carriage to translate and / or tilt with respect to the major carriage. Arms then extend from the minor carriage through the vacuum chamber wall to connect to an instrument. The instrument may be rapidly extended or retracted within the vacuum chamber via its connection to the major carriage, and may be more finely translated and / or tilted via its connection to the minor carriage. A damping arrangement isolates the instrument from vibration.

A tomographic atom probe includes an analysis chamber intended to analyze a sample of material in the form of a nanotip mounted on an anti-vibration support, the nanotip being brought to a temperature of between 0 kelvin and ambient temperature, the nanotip being biased at an adjustable voltage of between 1 kV and 15 kV, the analysis chamber comprising a position-sensitive and time of flight-sensitive ion detector. The atom probe comprises a generator for generating high-peak-intensity single-cycle ultrashort terahertz pulses, the analysis chamber comprising optical means for focusing the terahertz pulses, the focusing of the terahertz pulses causing the atoms of the nanotip to evaporate through the field effect without thermal effects. The terahertz pulses are generated by a femtosecond pulsed laser emitting very high-power ultrashort optical pulses at a high rate.

A dynamic multi-wavelength and sample voltage atom probe tomograph feedback control system includes a pulsed radiation source, an ion detector, a high voltage supply, and an analyzer. The pulsed radiation source produces first coherent light and second coherent light. The ion detector receives first emitted ions and second emitted ions from the atom probe sample. The high voltage supply produces a high voltage bias. The analyzer receives the ion signal from the ion detector and dynamically produces first pulsed radiation source control signal, second pulsed radiation source control signal, and high voltage bias control based on the ion signal. The system dynamically adjusts the optical wavelengths and sample voltage in real-time with atom probe tomography feedback by using the ion signal from the ion detector to dynamically produce first pulsed radiation source control signal, second pulsed radiation source control signal, and high voltage bias control.

To provide multilayer ceramic electronic component having excellent life characteristics, multilayer ceramic electronic component includes: dielectric layers containing dielectric material having perovskite structure of general formula ABO3-α; internal electrode layers containing nickel as main component; and first intermediate regions containing copper. According to three-dimensional atom probe analysis performed along first axis, first intermediate regions are regions that are contained in a region where nickel concentration is <70 at % and B-site element concentration is ≥20 at %, and that are sandwiched between first boundary part at which B-site element concentration is 20 at % and second boundary part at which copper concentration peak appears. Copper concentration at copper concentration peak is ≥1.0 at % and ≤5.0 at %. Concentration C calculated by formula (1) is ≥10 at % and <35 at %. In formula (1), C(Cu) represents copper concentration at copper concentration peak, C(B) represents B-site element concentration, and C(A) represents A-site element concentration.C=C⁡(Cu)+C⁡(B)-C⁡(A)(1)

The invention relates to the technical field of material analysis, for example, relates to a processing device and method for three-dimensional atom probe samples, and the processing device comprises a sample bearing module which is provided with sample stations, and each sample station is used for placing a three-dimensional atom probe sample; the vacuum sealing pipe is used for accommodating the sample bearing module; the cooling module is provided with a cavity used for containing cooling liquid, the cavity is provided with a sealing pipe station, and the sealing pipe station is used for containing a vacuum sealing pipe. Based on the treatment device, a full-flow vacuum and low-temperature protection mechanism can be provided for the treatment process of the three-dimensional atom probe sample, the accuracy of subsequent material phase change analysis and component characterization can be remarkably improved, and it is ensured that three-dimensional atom probe data can truly reflect the microstructure characteristics of the three-dimensional atom probe sample.

The application provides a neutral atom beam generating device and a neutral atom detector calibration device. The neutral atom beam generating device comprises: an ion beam generating device for emitting a mixed beam; a particle energy testing device comprising an incident end, a first exit end, a second exit end and a collection device; the incident end is used for receiving the mixed beam; the incident end and the second exit end are communicated through an arc-shaped channel, and a deflection magnetic field is arranged at the arc-shaped channel to deflect positive ions in the mixed beam and hit the collection device; the collection device is used for obtaining a first hitting position of the positive ions; the first exit end is used for emitting a first ion beam; a processing device connected with the collection device is used for determining a deflection radius of the positive ions according to the first hitting position, and determining the energy of the positive ions and neutral atoms according to the deflection radius; and a particle screening device is used for absorbing the positive ions and negative ions in the first ion beam to emit a neutral atom beam.

A method for determining a three-dimensional atomic distribution of a sample having a tip, during an atom probe tomography process. The method accounts for the tip not being axial symmetric and not having a hemispherical shaped apex throughout the evaporation process.

The application relates to the technical field of electromagnetic detection, in particular to a Rydberg atom receiving device and method capable of resisting electromagnetic interference. The device comprises two parallel-plate waveguide atom probes integrated with optical fiber air chambers, an 852nm frequency stabilization module, a 509nm frequency stabilization module and three microwave sources; the three microwave sources are respectively used for generating local field signals, signal field signals and interference field signals; one alkali metal atom air chamber is embedded in each of the two parallel-plate waveguide atom probes, wherein the first alkali metal atom air chamber in the first parallel-plate waveguide atom probe receives the local field signals, the signal field signals and the interference field signals, mixes the local field signals and the signal field signals to generate intermediate frequency signals, and the second parallel-plate waveguide atom probe is used for realizing signal anti-interference through compensation of alternating current Stark energy shift; the device has simple structure and high sensitivity, can effectively improve the anti-interference capability of microwave signal detection, and ensures the signal detection precision and reliability of the device in a complex electromagnetic environment.

The invention provides a loading device for radioactive sample TEM-3DAP combined characterization. The loading device comprises a loading sample fixing table, a sample clamping mechanism and a guide structure, the sample clamping mechanism is used for clamping an FIB carrying net with a radioactive three-dimensional atom probe tip sample; the sample clamping mechanism comprises a first clamping part and a second clamping part, the first clamping part is arranged on the second clamping part and rotates relative to the second clamping part, and the second clamping part is arranged on the loading sample fixing table, so that the sample clamping mechanism is mounted on the loading sample fixing table; the guide structure is arranged on the loading sample fixing table and is used for guiding the FIB carrying net with the radioactive three-dimensional atom probe tip sample to slide to the second clamping part. The guiding structure and the sample clamping mechanism form a guiding and positioning integrated channel, and the sample clamping mechanism rapidly clamps an FIB carrier net with a radioactive three-dimensional atom probe tip sample, so that the sample loading difficulty is greatly reduced, and the sample loading time is shortened.

The disclosure relates to the technical field of micro-analysis of materials, and provides a multifunctional sample stage for in-situ testing with transmission electron microscope (TEM) and atom probe tomography (APT). The multifunctional sample stage includes: a support stage comprising a base body, the base body having a first-step tier and a second-step tier; a metal pressing plate, wherein a first portion of the metal pressing plate is fixed to the first-step tier, and a second portion of the metal pressing plate is engageable with a silicon wafer carrying specimens disposed on the second-step tier; and a sample mounting stage assembly, which comprises a concave sample stage and a convex fixing stage, is positionable on the second-step tier, wherein a metal support grid for carrying specimens can be fixed to the sample mounting stage assembly.

The invention provides a laminated ceramic electronic component having excellent life characteristics and a method for manufacturing the same. The laminated ceramic electronic component has: a plurality of dielectric layers including a dielectric having a perovskite structure represented by the general formula ABO3-alpha; a plurality of internal electrode layers containing nickel as a main component; and a first intermediate region containing copper, the first intermediate region being a region sandwiched between a first boundary portion in which the concentration of a B-site element is 20 at% and a second boundary portion which is a peak of copper concentration in a region in which the nickel concentration is less than 70 at% and the concentration of the B-site element is 20 at% or more when three-dimensional atom probe analysis is performed along the first axis. When the copper concentration at the copper concentration peak is 1.0 at% to 5.0 at%, and the copper concentration at the copper concentration peak position is C (Cu), the concentration of the B-site element is C (B), and the concentration of the A-site element is C (A), the concentration C obtained by formula (1) is 10 at% to less than 35 at%, C = C (Cu) + C (B)-C (A)... (1), where C (Cu) is the copper concentration at the copper concentration peak position, C (B) is the concentration of the B-site element, and C (A) is the concentration of the A-site element.

The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.

This invention relates to the field of computer science and technology, specifically to a stamping prediction method and automatic compensation device based on multiple machine learning models. First, the microstructure and material characteristics of the sheet metal are obtained using transmission electron microscopy and atomic probe tomography. Then, finite element simulation sampling is performed, and an adaptive algorithm is used to expand the dataset. Multiple models are constructed and trained to obtain the final springback prediction model. Finally, an automatic compensation device is embedded to achieve automatic compensation. The automatic compensation device includes modules for visual parameter input, embedded springback prediction, springback compensation calculation, and automatic control. It allows for intuitive parameter input, accurate springback prediction, calculation of compensation values, and adjustment of the process. The purpose of this invention is to solve the problem of insufficient accuracy and efficiency of traditional prediction and compensation technologies in addressing the deviation of part dimensions and shapes from design requirements caused by springback during the stamping process of high-strength sheet metal.

The utility model discloses a cladding type heating system capable of being controlled in a segmented manner, which relates to the technical field of detection equipment and comprises a heating assembly composed of a switching mechanism and a cladding mechanism. The coating heating mantle adopts a sectional design, the coating heating mantle is divided into a plurality of independent and controllable heating jackets along the axial direction of the probe, each section of heating jacket can independently supply power and adjust temperature, finer temperature control is realized, and the coating heating mantle and the atom probe are designed in a split manner, so that the coating heating mantle and the atom probe are more stable in temperature control. The atomic probe and the coating heating cover can be separated through the switching mechanism, independent detection and use of the atomic probe are facilitated, the detection result is accurate, and the problems that a heating structure of existing atomic probe detection equipment is fixed outside the probe and cannot be separated from the probe during detection, the accuracy of the detection result is easily affected, and the detection efficiency is high are solved. And a heating structure does not have a segmented heating function, so that independent temperature control cannot be realized, and the limitation during detection is relatively high.

The invention relates to the field of information technology resource management in cloud data processing, and discloses an information technology resource allocation system based on cloud data, which comprises the following steps: dynamically synthesizing a group of micro-pulse probes which can resonate with an application feature and comprise a plurality of atom probes according to the application feature description of a task to be deployed, the micro-pulse probe is distributed to a plurality of candidate computing nodes; according to the method and the system, the detection behavior is dynamically associated with the resource characteristics of the task to be deployed, so that the allocation decision can penetrate through the fog of the apparent velocity, and the task binding efficiency is improved. And preferential selection is carried out on the basis of evaluating the real operation stability of the nodes, so that the possibility of allocating tasks to disguised healthy nodes with hidden performance risks is avoided, and exclusive matching of calculation loads and physical resource characteristics is realized.

The application discloses a direct flight type three-dimensional atom probe ultra-high vacuum system and a sample feeding method thereof. The ultra-high vacuum system comprises a sample feeding chamber, a transition chamber and an analysis chamber, and the sample feeding chamber, the transition chamber and the analysis chamber are respectively connected with a first vacuum pumping unit, a second vacuum pumping unit and a third vacuum pumping unit. A first vacuum magnetic force rod and a sample stage capable of being lifted are horizontally arranged in the sample feeding chamber, and the first vacuum magnetic force rod is used for pushing the sample stage into the transition chamber. A second vacuum magnetic force rod is horizontally arranged in the transition chamber and used for pushing the sample stage into the analysis chamber, and the vertical position of the second vacuum magnetic force rod is aligned with the center of a local electrode area of the analysis chamber. A delay line detector is arranged in the analysis chamber, and the delay line detector is used for completing mass-to-charge ratio detection of ions obtained through field evaporation effect of sample surface atoms. Through the system, the sample needle tip can be directly aligned with the center of the local electrode area.

Reconstruction method for atom probe tomography. A method (100) for determining the three-dimensional atomic distribution of a sample (201) having a tip during an atom probe tomography process. The method accounts for the fact that the tip is not axisymmetric and does not have a hemispherical apex throughout the evaporation process.

The present invention discloses a method and system for improving the three-dimensional atomic probe mass spectrometry resolution of metal materials based on laser polarization and field enhancement effect. The method first prepares the metal material to be tested into a nano-scale needle tip sample, places it on a three-dimensional atomic probe sample stage, and then uses a linearly polarized laser as an excitation source, adjusts its polarization direction to be consistent with the axis of the sample needle tip, and then uses a three-dimensional mobile platform to gradually adjust the distance between the sample needle tip and the focused spot of the laser for detection. In order to realize the above method, the present invention also provides a related system, which includes a linearly polarized laser source, an optical polarization adjustment module, a three-dimensional mobile platform, a three-dimensional atomic probe body and a data acquisition and processing device. The method uses the laser field enhancement effect to replace the traditional thermal effect driving mechanism through laser polarization direction adjustment, near-field positioning and parameter optimization, effectively solving the technical problem of low resolution caused by thermal effect, and greatly improving the resolution of three-dimensional atomic probe mass spectrometry.

Systems, methods, and communication cables taught herein provide cryogenic cooling, high voltage connections, and other electrical connections to a sample on a stage within a vacuum environment while still enabling stage motion in at least five degrees of freedom with minimal stage vibration to enable new or improved measurement applications in-situ within the microscope such as atom probe tomography and testing of quantum computing components. The connection cables taught herein combine connections into a single connection cable within an outer spring that is suitable for use in ultra-high vacuum. The connection cables are also shaped and configured to maintain at least a minimum standoff distance from components in the nearby environment (e.g., chamber walls and other equipment) to prevent mechanical, electrical, and thermal shortcutting.

A method for detecting includes providing a semiconductor structure including a first doped region having a dopant ion therein; sampling the semiconductor structure to obtain a test sample, the test sample including a test end and a grounded end, the test end of the test sample including the first doped region; and obtaining a three-dimensional profile of a distribution of the dopant ion in the first doped region using atom probe tomography. The method can improve performance of the semiconductor structure.

The invention discloses a three-port undersaturated Rydberg atom probe based on nonmetal laser heating, and belongs to the field of Rydberg atom microwave electric field measurement. The device adopts a non-metal laser heating mode, so that the interference of a traditional metal heating element on a microwave electric field can be avoided, and the electromagnetic purity of a measurement environment is ensured. Meanwhile, by arranging the undersaturation three-port optical fiber alkali metal atom gas chamber, the atomic number density in the gas chamber is kept stable when the external temperature changes within a certain range by utilizing the undersaturation characteristic of the undersaturation three-port optical fiber alkali metal atom gas chamber, and meanwhile, the jitter of a spectral signal during microwave electric field measurement is reduced. Therefore, the problem that the measurement precision is affected due to the change of the number of atoms caused by temperature fluctuation of the saturated atom gas chamber is solved. The Rydberg atomic microwave electric field measuring accuracy and stability can be improved, a reliable atomic probe is provided for high-precision electric field detection, and the Rydberg atomic microwave electric field measuring device is suitable for aviation, airborne and other scenes with strict requirements for the measuring environment.

The invention provides a large-size large-opening-area-ratio micro-channel plate for a three-dimensional atom probe and a preparation method thereof, and the method comprises the following steps: matching a regular hexagonal core material rod with a regular hexagonal skin material glass tube, and carrying out monofilament drawing, multifilament rod arrangement, multifilament drawing, multifilament screen arrangement, cold processing slicing and acid-alkali corrosion to obtain the large-size large-opening-area-ratio micro-channel plate for the three-dimensional atom probe. The micro-channel MCP substrate with the orthohexagonal micro-channel is obtained; performing flaring process treatment by using etching equipment, monitoring the wall thickness change by adopting a reflectivity monitoring mode and a linear and nonlinear calibration model based on the wall thickness interval, and determining the stop of the etching process according to the wall thickness of a flaring control point to obtain a flaring MCP substrate; performing hydrogen reduction treatment to form a secondary electron emission layer; and finally, coating the input surface and the output surface of the MCP subjected to hydrogen reduction treatment by using a metal material to prepare a metal electrode film.

The invention provides a method and a device for preparing a three-dimensional atom probe tip of a geological sample with low Mohs hardness, and belongs to the technical field of material preparation. The method provided by the invention comprises the following steps: depositing a Pt protection layer in a target area; milling the periphery of the Pt protective layer on the geological sample by adopting an ion beam to form a triangular prism-shaped long-strip sample, and transferring the triangular prism-shaped long-strip sample to the silicon column; and inclining the sample table to enable the direction of the ion beam to be vertically welded on the top surface of the sample on the silicon column to be downward, determining a girdling step and size parameters of the annular ion beam, and performing multiple times of girdling on the sample on the silicon column until the sample on the silicon column is processed into a target shape. According to the method and the device for preparing the three-dimensional atom probe tip of the geological sample with low Mohs hardness, provided by the invention, the complicated girdling process can be processed by refining the girdling step and optimizing the size parameter of the annular ion beam, the preparation difficulty of the tip sample is reduced, and the operability and the success rate of sample preparation are improved.

The embodiment of the utility model relates to the technical field of micro-area microscopic analysis of materials, and particularly provides a transmission electron microscope and atomic probe in-situ analysis sample stage, which comprises a first part, a second part, a third part and a fourth part, at least one part of the second part is arranged at the mounting position; wherein the first part is provided with a plurality of grooves, and the TEM metal carrying net carrying the needle-shaped sample can be arranged in any one of the plurality of grooves. By means of the structure, the assembling reliability between the first part and the second part can be guaranteed through the arrangement of the installation position. On the basis, through the arrangement of a plurality of grooves, a plurality of needle-shaped samples carried on the TEM metal carrying net can be tested at the same time, and the experiment efficiency is improved. The sample table can stably support the TEM metal carrying net to be vertically upward, and the metal carrying net is uniformly stressed, so that the damage possibly caused when a sample is transferred between a transmission electron microscope and an atom probe is avoided, and the accuracy of an in-situ analysis result is ensured.

The application provides a method and device for preparing a three-dimensional atom probe needle tip of a low-Mohs hardness geological sample, and belongs to the technical field of material preparation. The method provided by the application comprises the following steps: depositing a Pt protective layer on a target region; milling the periphery of the Pt protective layer on the geological sample by using an ion beam to form a three-prism-shaped long strip sample, and transferring the three-prism-shaped long strip sample to a silicon column; tilting a sample table to make the direction of the ion beam be perpendicular to the top surface of the sample welded on the silicon column and downward, determining the size parameters of a ring cutting step and a ring-shaped ion beam, and performing multiple ring cutting on the sample on the silicon column until the sample on the silicon column is processed into a target shape. The method and device for preparing the three-dimensional atom probe needle tip of the low-Mohs hardness geological sample can make the complex ring cutting process be streamlined, reduce the preparation difficulty of the needle tip sample, and improve the operability and success rate of sample preparation by refining the ring cutting step and optimizing the size parameters of the ring-shaped ion beam.