Method of Manufacturing Sample for Atom Probe Analysis by FIB and Focused Ion Beam Apparatus Implementing the Same
Patent Information
- Authority / Receiving Office
- US · United States
- Patent Type
- Applications(United States)
- Current Assignee / Owner
- HITACHI HIGH TECH SCI CORP
- Publication Date
- 2008-11-27
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
RELATED APPLICATIONS
[0001] This application claims priority under 35 U.S.C. §119 to Japanese Patent Application No. JP2006-303500 filed on Nov. 9, 2006, the entire content of which is hereby incorporated by reference.BACKGROUND OF THE INVENTION
[0002] The present invention relates to a method of manufacturing a sample for an atom probe analysis by an FIB, and an apparatus capable of easily implementing that method.
[0003] As means capable of directly observing an atomic arrangement of a needle point, there is developed an atom probe (AP: Atom Probe) that is a composite instrument of a mass spectrometer capable of detecting a single ion and a field-ion microscope (FIM). The AP is a solitary device capable of analyzing an electronic state, the atomic arrangement and a composition distribution of the needle point. Since a field evaporation orderly proceeds in every atom layer from a surface first layer, by the AP it is possible to investigate a composition or the composition distribution of...