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38 results about "Optical absorption spectra" patented technology

Optical absorption spectra of minerals result from the interaction with electromagnetic radiation in the energy range of 40 000 cm^(-1) to 4000 cm^(-1) corresponding to the wavelength range of 250 nm to 2500 nm.

Laser stimulated atom probe characterization of semiconductor and dielectric structures

A laser stimulated atom probe for atom probe imaging of dielectric and low conductivity semiconductor materials is disclosed. The laser stimulated atom probe comprises a conventional atom probe providing a field emission tip and ion detector arrangement, a laser system providing a laser short laser pulse and synchronous electronic timing signal to the atom probe, and an optical system for delivery of the laser beam onto the field emitting tip apex. The conventional atom probe is employed in a manner similar to that used for investigation of high conductivity materials. However, the electric field is held static while the laser is pulsed to provide pulsing of the ion emission rate. The laser pulsing is accomplished in a manner similar to prior implementations of pulsed laser atom probe spectroscopy. The laser pulses provide a trigger signal to enable recording the time of flight in the atom probe. The laser operates at a wavelength in the UV in order to enhance the optical absorption in semiconductor or dielectric field emission tips. The increased optical absorption allows efficient thermal pumping of the field evaporation rate. The tip apex field is also used to redshift the optical absorption spectra of the dielectric or semiconducting material under investigation, further enhancing the optical absorption. Due to the enhanced absorption, it is also possible to realize a photo ionization mechanism, wherein the laser stimulates electronic transitions from the more extended surface atoms, thereby ionizing the surface atom. The laser source is collimated by a collimation lens, reflected using dielectric mirrors, directed onto the sample tip using a focusing lens arrangement, collected from the tip using a collection lens, and directed into a beam stop. The laser beam diameter at focus is approximately 3-30 microns, thus, individual emission tips may be scanned from a field of tips illuminated by the laser pulse.
Owner:CHISM II WILLIAM W

Discrete three-dimensional fluorescence/visible light absorption spectrum detection device for judging water quality pollution

The invention discloses a discrete three-dimensional fluorescence/visible light absorption spectrum detection device for discriminating water quality pollution, which integrates a water path, a circuit and a light path, adopts a small spectrometer and a prism light splitting module, and is low in cost and convenient to carry and maintain; a discrete three-dimensional fluorescence spectrum and an absorption spectrum can be obtained at the same time in one-time on-site detection, and a characteristic peak is enhanced by utilizing the relevance of light absorption and fluorescence mechanisms. After circulating sampling is set, uninterrupted in-situ continuous measurement can be achieved, obtained spectral data cover water quality abnormal information and pollution type information at different times, and the data obtained through the device can be used for rapidly judging whether pollution exists or not and the pollution type. Through a side cloud cooperation mode, detected bottom layer data does not need to be uploaded to a cloud end for analysis, computing resources can be shared by a plurality of detection devices, the network flow of water quality analysis is saved, and the processing speed and the operation efficiency are improved.
Owner:ZHEJIANG UNIV

A kind of CR-doped ZNS intermediate zone thin film and preparation method thereof

The invention discloses a Cr-doped ZnS intermediate zone thin film and a preparation method thereof. The preparation method firstly cleans the soda-lime glass substrate, and then combines the ZnS target material with the Cr 2 S 3 The targets are respectively installed on the target positions of the magnetron sputtering apparatus, and then the cleaned soda-lime glass substrate is fixed on the stage, vacuumized, and then alternately sputtered ZnS and Cr in turn. 2 S 3 , deposit Cr-ZnS on the soda-lime glass substrate to obtain a laminated film, and finally put the laminated film into an annealing furnace for annealing, and finally obtain a Cr-ZnS intermediate zone film. The preparation method of the Cr-doped ZnS intermediate zone thin film of the present invention adopts the alternating magnetron sputtering method combined with the Cr-ZnS thin film prepared by annealing under a protective atmosphere, which has a mixed structure of sphalerite and wurtzite, In its UV-vis-NIR light absorption spectrum, it is located near 650nm and 459nm, with two additional absorption peaks appearing, indicating that there is an intermediate band formation in the original energy band structure, resulting in an increase in the light absorption coefficient and an increase in the light absorption intensity, further Provide guidance for the preparation of Cr‑ZnS intermediate zone thin film solar cells.
Owner:鄂尔多斯应用技术学院
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