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High-efficiency ternary organic solar cell and preparation method thereof

An organic solar cell, high-efficiency technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of weak absorption, achieve the effects of modifying the shape, broadening the optical absorption spectrum, and increasing the short-circuit current density

Inactive Publication Date: 2019-07-05
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, although the spectral absorption range of some binary non-fullerene systems can be extended to 1000nm, which achieves a high short-circuit current density, the absorption in the short wavelength range is obviously weak, and there is still room for improvement.

Method used

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  • High-efficiency ternary organic solar cell and preparation method thereof
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  • High-efficiency ternary organic solar cell and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0040] Engraving on the reverse side of the ITO-containing substrate is convenient for subsequent experiments. Subsequently, the etched ITO substrate was ultrasonically cleaned with isopropanol, detergent, ultrapure water, and isopropanol. Each step lasted 15 minutes. After completion, it was placed in an oven at 70°C for drying. Before the experiment, the slices were subjected to O 2 The purpose of the plasma treatment is to complete the further cleaning of the sheet, and then spin-coat a layer of electron transport layer ZnO on the surface of the ITO at a speed of 2500rpm for 45s. Finally, a ZnO layer with a thickness of 40 nm is produced. Then the sheet was transferred to a glove box filled with nitrogen, and the blend solution (solvent was chlorobenzene) with PTB7-Th:F8IC=1:1.5 (mass ratio) and donor concentration of 10mg / mL was placed in ZnO at a speed of 3000rpm. A film was formed by spin-coating to obtain a blend film with a thickness of 100 nm. Finally, place the fi...

Embodiment 2

[0043] Engraving on the reverse side of the ITO-containing substrate is convenient for subsequent experiments. Subsequently, the etched ITO substrate was ultrasonically cleaned with isopropanol, detergent, ultrapure water, and isopropanol. Each step lasted 15 minutes. After completion, it was placed in an oven at 70°C for drying. Before the experiment, the slices were subjected to O 2 The purpose of the plasma treatment is to complete the further cleaning of the sheet, and then spin-coat a layer of electron transport layer ZnO on the surface of the ITO at a speed of 2500rpm for 45s. After completion, place it on a heating platform at 200°C for 1h. Finally, a ZnO layer with a thickness of 40 nm is produced. The slides were then transferred to a nitrogen-filled glove box, and the PTB7-Th:F8IC:PC 71 BM=1:1.5:0.15 (mass ratio, 15wt% PC 71 BM), a ternary blend solution with a donor concentration of 10 mg / mL (the solvent is chlorobenzene) was spin-coated on ZnO at a speed of 3000...

Embodiment 3

[0046] Engraving on the reverse side of the ITO-containing substrate is convenient for subsequent experiments. Subsequently, the etched ITO substrate was ultrasonically cleaned with isopropanol, detergent, ultrapure water, and isopropanol. Each step lasted 15 minutes. After completion, it was placed in an oven at 70°C for drying. Before the experiment, the slices were subjected to O 2 The purpose of the plasma treatment is to complete the further cleaning of the sheet, and then spin-coat a layer of electron transport layer ZnO on the surface of the ITO at a speed of 2500rpm for 45s. After completion, place it on a heating platform at 200°C for 1h. Finally, a ZnO layer with a thickness of 40 nm is produced. The slides were then transferred to a nitrogen-filled glove box, and the PTB7-Th:F8IC:PC 71 BM=1:1.5:0.30 (mass ratio, 30wt%), the ternary blending solution (solvent is chlorobenzene) that the donor concentration is 10mg / mL is spin-coated on ZnO with the rotating speed of ...

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Abstract

The invention discloses a high-efficiency ternary organic solar cell and a preparation method thereof. The active layer of the organic solar cell is obtained by blending a donor material and a receptor material. A ternary organic solar cell containing both non-fullerene and fullerene receptors is prepared by introducing a third component, fullerene acceptor, into the active layer of a binary non-fullerene organic solar cell. The addition of the fullerene receptor not only broadens the optical absorption spectrum of a device and increases the short-circuit current density, but also modifies theshape of the active layer, and finally improves the photoelectric conversion efficiency of the organic solar cell. Further, the active layer of the ternary organic solar cell can be processed at roomtemperature, and a solution can be formed into a film by spin coating, blade coating, and screen printing. Without any physical optimization method, the method can improve the efficiency of the device, reduces the manufacturing cost of the organic solar cell, and is suitable for the roll-to-roll production process.

Description

technical field [0001] The invention relates to the technical field of organic photoelectric devices, in particular to a high-efficiency ternary organic solar cell and a preparation method thereof. Background technique [0002] The discovery and use of coal has promoted the development of human industry, and the use of oil and natural gas has made human society develop rapidly. With the advent of industrial society, human beings are increasingly dependent on energy. However, primary energy is a precious resource formed during the evolution of the earth over hundreds of millions of years, and it is non-renewable, and the excessive use of these energy sources will inevitably affect damage to the ecological environment. Therefore, the development and promotion of green energy is imminent. As an inexhaustible source of energy, solar energy has attracted the attention and research of scientists all over the world because of its good development and application prospects. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K85/113H10K85/215H10K85/6576H10K30/15Y02E10/549Y02P70/50
Inventor 何志才陈虹竹
Owner SOUTH CHINA UNIV OF TECH
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