A tunable near-infrared three-array periodic broadband light absorption enhancement structure

A technology to enhance the structure and array period, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low light absorption rate and limit the application of graphene
CN111244199BActive Publication Date: 2022-01-21苏州众为光电有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
苏州众为光电有限公司
Publication Date
2022-01-21

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Abstract

The invention discloses an adjustable near-infrared three-array periodic broadband light absorption enhancement structure, which includes a graphene layer, a metal micro-nano array layer, a dielectric layer and a base layer sequentially stacked from top to bottom, wherein the graphite A lower transparent conductive layer, a dielectric insulating layer, and an upper transparent conductive layer are arranged in sequence from bottom to top above the alkene layer, and a DC power supply is electrically connected between the lower transparent conductive layer and the upper transparent conductive layer; the metal micro-nano The array layer includes at least one group of array units arranged in the same layer, and each group of array units includes a first row of micro-nano particles, a second row of micro-nano particles and a third row of micro-nano particles arranged at intervals along an array direction. According to the present invention, by changing the magnitude of the applied voltage, its light absorption spectrum can be adjusted to meet the application requirements in different resonance frequency ranges.
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Description

technical field

[0001] The invention relates to the field of optoelectronic technology, in particular to an adjustable near-infrared three-array periodic broadband light absorption enhancement structure. Background technique

[0002] As an important information perception device, photodetectors have greatly promoted the development of human science and technology and the process of informatization. Broad-spectrum detection and imaging have broad application prospects in the fields of satellite remote sensing, imaging, and optical communication. Near-infrared wide-spectrum detectors as a key part have very important research value. At present, traditional infrared detectors based on materials such as mercury cadmium telluride (HgCdTe) and indium gallium arsenic (InGaAs) usually require refrigeration in order to improve the signal-to-noise ratio, resulting in large size and high cost of the detector. Realizing portable and low-cost infrared detection is an important developme...

Claims

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