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All-optical monolithic integrated optoelectronic device and manufacturing method thereof

A technology of monolithic integration and optoelectronic devices, applied in the direction of electric solid state devices, electrical components, semiconductor devices, etc., can solve the problems of low device quality, unfavorable miniaturized equipment manufacturing, high cost, etc., achieve process simplification, convenient and practical application, Reduce the effect of high cost

Active Publication Date: 2018-01-09
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

[0005] The purpose of the present invention is to provide an all-optical monolithic integrated optoelectronic device and its manufacturing method, which solves the technical problems of high cost, unfavorable miniaturized equipment manufacturing, and low quality of devices obtained by traditional epitaxial technology in the prior art

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  • All-optical monolithic integrated optoelectronic device and manufacturing method thereof

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Embodiment Construction

[0021] The invention utilizes the direct preparation of GaInP / AlGaInP (GaInP or AlGaInP) active area quantum well on p-GaAs substrate, and prepares n+GaAs on it, and realizes the two-color monolithic integrated optoelectronic device. Further, the present invention utilizes the GaN / GaAs direct bonding method to effectively combine GaN / GaAs two materials with large difference in bandgap energy through the influence of the selection of doping concentration and annealing time on the interface resistance, and solve the problem of Due to the mismatch problem caused by different crystal lattices, the second-generation semiconductor GaAs material is effectively combined with the third-generation semiconductor GaN material. Compared with the existing technology, it also reduces the high cost caused by using multiple different substrates in mechanical connections Cost, the purpose of cost reduction and process simplification is realized. The present invention also provides an all-optica...

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Abstract

The present invention provides an all-optical GaN / GaInP / GaAs monolithic integrated device and a manufacturing method thereof. The bandgap energies of the all-optical monolithic integrated device are 3.5 / 1.9 / 1.4 ev, respectively, increasing between GaAs and GaN The bandgap of GaInP in the middle layer is 1.9ev and the wavelength is in the range of red light. The all-optical monolithic integrated device can absorb and utilize different energy spectra similar to its bandgap, which are blue light, yellow light and red light respectively, so as to realize all-optical scope.

Description

technical field [0001] The application belongs to the field of optoelectronic technology, and in particular relates to an all-optical single-chip integrated optoelectronic device and a manufacturing method thereof. Background technique [0002] Currently, multi-color optoelectronic devices used in laser display, micro-projection, etc. generally adopt the integration of multiple monochromatic lasers (LEDs) through optical lenses or other devices. Not only increases the cost, but also is not conducive to the manufacture of miniaturized equipment. [0003] In addition, wafer direct bonding technology is a new process of material integration. Using bonding technology, materials with mismatched crystal lattice or crystal orientation can be integrated to manufacture structures and devices that cannot be manufactured by traditional epitaxial growth technology; materials with different optoelectronic and mechanical properties can be integrated to achieve complementary advantages. ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/00
Inventor 任昕陆书龙边历峰
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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