Preparation method of semiconductor probe tip sample for detection of three-dimensional atom probe

An atomic probe and semiconductor technology, applied in the field of micro-nano-scale material sample preparation, can solve problems such as data distortion and large differences in element evaporation fields, so as to improve efficiency, reduce sampling steps, and reduce the possibility of needle tip sample breakage Effect

Active Publication Date: 2019-02-05
NANJING UNIV OF SCI & TECH
View PDF5 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the complexity of the structure of semiconductor devices and the large differences in the evaporation fields of different elements, there has always been a difficulty wh

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of semiconductor probe tip sample for detection of three-dimensional atom probe
  • Preparation method of semiconductor probe tip sample for detection of three-dimensional atom probe
  • Preparation method of semiconductor probe tip sample for detection of three-dimensional atom probe

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0042] By using the fin structure sample processing technology in the cross-cut fin field effect transistor of the present invention, the fin structure of the fin field effect transistor can be prepared for three-dimensional atom probe tip samples. This method is different from the traditional method of vertically placing the entire fin structure on a needle tip, but adopts a segmented method, cross-cutting the fin structure in the semiconductor device, and placing the fin structure in the semiconductor device perpendicular to the growth direction. Use the focused ion beam to cut into a small section, that is, only a small section of the fin structure is included in each 3D atom probe tip sample, and then cut multiple needle tips, and after collecting the 3D atom probe data for all the tip, that is Can be combined to form a complete fin structure.

[0043] T...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention belongs to the field of material preparation, and particularly provides a preparation method of a semiconductor probe tip sample for a detection of a three-dimensional atom probe. The method is different from the traditional method for vertically placing an entire fin structure on a probe tip, and comprises the following steps: crosscutting the fin structure in a semiconductor deviceby adopting a segment method; placing the fin structure in the semiconductor device perpendicularly to a growth direction; cutting into small segments by using a focused ion beam, that is, each probetip sample for the three-dimensional atom probe only comprises a small segment of the fin structure; cutting a plurality of probe tips; and performing collecting three-dimensional atom probe data onall probe tip samples to combine into a complete fin structure. According to the preparation method of the semiconductor probe tip sample for the detection of the three-dimensional atom probe, a datadistortion phenomenon on a semiconductor probe tip sample can be effectively avoided when detecting the three-dimensional atom probe, and more accurate data can be provided for analyzing a result of the three-dimensional atom probe.

Description

technical field [0001] The invention belongs to the field of micro-nano-scale material sample preparation, and in particular relates to a method for preparing a semiconductor needle tip sample for three-dimensional atom probe detection by using a focused ion beam. Background technique [0002] The 3D atom probe is a measurement and analysis method with atomic-level spatial resolution. Based on the principle of "field evaporation", the 3D atom probe applies a strong voltage pulse or laser pulse to the sample, turning its surface atoms into ions one by one, removes and collects them, and finally obtains a complete needle tip sample through software reconstruction. The three-dimensional atom probe has a significant effect on the analysis of element segregation, dislocation composition, precipitated phase composition and interface composition in materials. [0003] With the development of the semiconductor industry, the electronic industry has continuously increased the require...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01Q30/20
CPCG01Q30/20
Inventor 胡蓉吴杏苹薛晶梁宁宁沙刚靳慎豹
Owner NANJING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap