Preparation method of semiconductor probe tip sample for detection of three-dimensional atom probe

Abstract

The invention belongs to the field of material preparation, and particularly provides a preparation method of a semiconductor probe tip sample for a detection of a three-dimensional atom probe. The method is different from the traditional method for vertically placing an entire fin structure on a probe tip, and comprises the following steps: crosscutting the fin structure in a semiconductor deviceby adopting a segment method; placing the fin structure in the semiconductor device perpendicularly to a growth direction; cutting into small segments by using a focused ion beam, that is, each probetip sample for the three-dimensional atom probe only comprises a small segment of the fin structure; cutting a plurality of probe tips; and performing collecting three-dimensional atom probe data onall probe tip samples to combine into a complete fin structure. According to the preparation method of the semiconductor probe tip sample for the detection of the three-dimensional atom probe, a datadistortion phenomenon on a semiconductor probe tip sample can be effectively avoided when detecting the three-dimensional atom probe, and more accurate data can be provided for analyzing a result of the three-dimensional atom probe.

Description

technical field [0001] The invention belongs to the field of micro-nano-scale material sample preparation, and in particular relates to a method for preparing a semiconductor needle tip sample for three-dimensional atom probe detection by using a focused ion beam. Background technique [0002] The 3D atom probe is a measurement and analysis method with atomic-level spatial resolution. Based on the principle of "field evaporation", the 3D atom probe applies a strong voltage pulse or laser pulse to the sample, turning its surface atoms into ions one by one, removes and collects them, and finally obtains a complete needle tip sample through software reconstruction. The three-dimensional atom probe has a significant effect on the analysis of element segregation, dislocation composition, precipitated phase composition and interface composition in materials. [0003] With the development of the semiconductor industry, the electronic industry has continuously increased the require...

AI Technical Summary

Problems solved by technology

However, due to the complexity of the structure of semiconductor devices and the large differences in the evaporation fields of different elements, there has always been a difficulty when using 3D atom probes to study semiconductor devices, that is, due to the large differences in the evaporation fields of elements, when data reconstruction Data distortion will occur

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