Perovskite solar cell and manufacturing method of perovskite solar cell
A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of reducing the photoelectric conversion efficiency of the cell, the instability of the perovskite solar cell, limiting the practical application of the cell, etc., so as to improve the cell efficiency, improve the stability, reduce the The effect of internal compounding
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0032] Embodiment 1, prepares silane coupling agent (C 12 h 25 Si(OCH 3 ) 3 ) in isopropanol solution, the concentration of which is 0.05M, is used to modify the surface of the perovskite material.
[0033] First, a layer of dense titanium dioxide film (100 nanometers) is cast on the conductive glass by using the sol-gel method; after treatment at 450 ° C, a layer of porous titanium dioxide layer is coated on the dense layer of titanium dioxide with a thickness of 500 nanometers, and it is sintered for later use.
[0034] Use CH 3 NH 3 I and PbCl 2 Dissolve in N,N-dimethylformamide (DMF) at a molar ratio of 3:1, and deposit the above solution on a porous titanium dioxide membrane using a homogenizer. By precisely controlling the temperature and baking at 100°C for 1 hour, the crystallization becomes CH 3 NH 3 PB 3 polycrystalline film.
[0035] Silane coupling agent (C 12 h 25 Si(OCH 3 ) 3 ) was dissolved in isopropanol at a concentration of 0.05M. CH 3 NH 3 P...
Embodiment 2
[0040] Embodiment 2, prepare silane coupling agent (C 12 h 25 Si(OCH 3 ) 3 ) in isopropanol, the concentration of which is 0.1M, is used to modify the surface of the perovskite material.
[0041] First, a layer of dense titanium dioxide film (50 nanometers) is cast on the conductive glass by using the sol-gel method; after treatment at 450°C, a layer of porous titanium dioxide layer is coated on the dense layer of titanium dioxide with a thickness of 350 nanometers, and it is sintered for later use.
[0042] Use CH 3 NH 3 I and PbCl 2 Dissolve in DMF at a molar ratio of 3:1, and deposit the above solution on porous TiO using a homogenizer 2 film. By precisely controlling the temperature and baking at 100 degrees for one hour, the crystallization becomes CH 3 NH 3 PB 3 polycrystalline film.
[0043] Silane coupling agent (C 12 h 25 Si(OCH 3 ) 3 ) was dissolved in isopropanol at a concentration of 0.1M. CH 3 NH 3 PB 3 / TiO 2 The film was soaked in the above s...
Embodiment 3
[0049] Embodiment 3, prepare silane coupling agent (C 12 h 25 Si(OCH 3 ) 3 ) in isopropanol solution with a concentration of 0.2M for modifying the surface of the perovskite material.
[0050] First, a layer of dense titanium dioxide film (100 nanometers) is cast on the conductive glass by using the sol-gel method; after treatment at 450°C, a layer of porous titanium dioxide layer with a thickness of 500 nanometers is coated on the dense layer of titanium dioxide, and it is sintered for later use.
[0051] Use CH 3 NH 3 I and PbCl 2 Dissolve in DMF at a molar ratio of 3:1, and deposit the above solution on porous TiO using a homogenizer 2 film. By precisely controlling the temperature and baking at 100 degrees for one hour, the crystallization becomes CH 3 NH 3 PB 3 polycrystalline film.
[0052] Silane coupling agent (C 12 h 25 Si(OCH 3 ) 3 ) was dissolved in isopropanol at a concentration of 0.2M. CH 3 NH 3 PB 3 / TiO 2 The film was soaked in the above sol...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com