Quick diffusion annealing method

A rapid annealing and diffusion furnace technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of reducing the production output of cell factories, reducing the conversion efficiency of solar energy, and repairing unfavorable lattice defects. Achieve the effect of reducing the total process time, increasing production capacity and reducing thermal damage

Inactive Publication Date: 2017-05-10
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sealing and heat preservation performance of the closed diffusion furnace is very good, so the ordinary annealing process takes a long time, and the temperature that can be lowered is still high, which is not good for repairing lattice defects, and the extension of the process time will reduce The production output of the cell factory reduces the profit of the enterprise
[0003] Diffusion process i

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The first step is to insert the textured silicon wafer into the quartz boat and send it to the diffusion furnace. After the furnace door is closed, the temperature from the furnace mouth to the furnace tail is raised to 780°C, and the heating time is 600s. At the same time, nitrogen flow is always introduced. is 17000 sccm;

[0025] The second step is the pre-oxidation process with a maintenance time of 600s and a temperature of 780°C. At the same time, the nitrogen flow rate is 15000 sccm, and the oxygen flow rate is 350 sccm. The pre-deposition process is performed after the pre-oxidation process. On the basis of oxidation, the flow rate of the source nitrogen gas is 1000 sccm;

[0026] The third step is to advance the aerobic temperature rise. The temperature is raised from 780°C to 840°C. The heating time is 780s. The flow rate of nitrogen gas is 16000 sccm and the flow rate of oxygen is 1000 sccm. The temperature is lowered to 810°C, and the maintenance time is 48...

Embodiment 2

[0031] The first step is to insert the textured silicon wafer into the quartz boat and send it to the diffusion furnace. After the furnace door is closed, the temperature from the furnace mouth to the furnace tail is raised to 800°C, and the heating time is 700s. At the same time, nitrogen flow is always introduced. is 17000 sccm;

[0032] The second step is the pre-oxidation process with a maintenance time of 600s and a temperature of 800°C. At the same time, the nitrogen flow rate is 15000 sccm and the oxygen flow rate is 350 sccm. The pre-deposition process is carried out after the pre-oxidation process. On the basis of oxidation, the flow rate of the source nitrogen gas is 1000 sccm;

[0033] The third step is to advance the aerobic temperature rise. The temperature is raised from 800°C to 880°C. The heating time is 1000s. The flow rate of nitrogen gas is 16000 sccm and the flow rate of oxygen is 1000 sccm. The temperature is lowered to 850°C, and the maintenance time is ...

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PUM

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Abstract

The invention discloses a quick diffusion annealing method. A primary source introduction and pre-deposition process is carried out at below 800 DEG C. After deposition, aerobic heating advance is carried out, and the temperature can rise up to 840-880 DEG C. A PN node advanced at the moment is deep. Then, an aerobic cooling process is carried out, and the temperature drops to 810-850 DEG C. Secondary source introduction is carried out, which is a key step for quick annealing. After that, the furnace door is half-opened immediately, a large amount of nitrogen is introduced, and quick cooling and annealing are carried out. The lattice is repaired to a certain degree, but the phosphorus source still needs certain advance time. Thus, the furnace door is closed slowly, and the temperature goes back to a constant state. The beneficial effects of the method are as follows: through secondary source introduction, the surface concentration is increased, and the filling factor is improved; through lattice repair, thermal damage is reduced, the open-circuit voltage and short-circuit current are improved, and the conversion efficiency of cells is improved; and through quick cooling, the total process time is reduced, the process efficiency is improved, and the production capacity is increased.

Description

technical field [0001] The invention relates to the related technical field of solar cells, in particular to a diffusion rapid annealing method. Background technique [0002] Solar diffusion furnaces mainly include tubular diffusion furnaces and chain diffusion furnaces. The tubular diffusion furnaces include closed-tube diffusion and open-tube diffusion. Since the closed-tube diffusion furnace can be completely isolated from the external environment, it will not be disturbed by the external environment, etc. Advantages, the uniformity of square resistance after diffusion is better, and this equipment is basically used at present. The sealing and heat preservation performance of the closed diffusion furnace is very good, so the ordinary annealing process takes a long time, and the temperature that can be lowered is still high, which is not good for repairing lattice defects, and the extension of the process time will reduce The production output of the cell factory reduces ...

Claims

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Application Information

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IPC IPC(8): H01L21/324H01L31/18
CPCH01L21/324H01L31/18Y02P70/50
Inventor 董方赵颖贾松燕任永伟陈健生
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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