Boron diffusion method for N-type solar cell

A solar cell and diffusion method technology, which is applied in the field of solar cell preparation technology, can solve the problem of low concentration of boron atoms, achieve the effects of optimizing ohmic contact, reducing junction depth, and improving conversion efficiency

Inactive Publication Date: 2018-03-30
SPIC XIAN SOLAR POWER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention proposes a boron diffusion method for N-type solar cells to solve the problem of low concentration of boron atoms on the silicon wafer surface after boron diffusion in the prior art

Method used

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  • Boron diffusion method for N-type solar cell

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Embodiment 1

[0032] This embodiment provides a boron diffusion method for an N-type solar cell, comprising the following steps:

[0033] S1: The N-type silicon wafer after texturing is diffused by a high-temperature boron source to obtain a P+ emitter, and the square resistance of the N-type silicon wafer after boron diffusion is 64ohm / sq;

[0034] S2: react at room temperature for 40 seconds in a hydrofluoric acid solution with a mass percentage concentration of 10%, and remove the borosilicate glass on the surface of the N-type silicon wafer;

[0035] S3: Clean the N-type silicon chip after removing the borosilicate glass with pure water, and remove the residual hydrofluoric acid solution on the surface;

[0036] S4: Put the N-type silicon chip after cleaning with pure water into a NaOH solution with a mass percentage concentration of 4% for 3.5mins to react for 3.5mins, so that the square resistance of the N-type silicon chip is increased by 8ohm / sq;

[0037] S5: Put the N-type silicon...

Embodiment 2

[0041] This embodiment provides a boron diffusion method for an N-type solar cell, comprising the following steps:

[0042] S1: The N-type silicon wafer after texturing is diffused by a high-temperature boron source to obtain a P+ emitter, and the square resistance of the N-type silicon wafer after boron diffusion is 72ohm / sq;

[0043] S2: react at room temperature for 50 seconds in a hydrofluoric acid solution with a mass percentage concentration of 9%, and remove the borosilicate glass on the surface of the N-type silicon wafer;

[0044] S3: Clean the N-type silicon chip after removing the borosilicate glass with pure water, and remove the residual hydrofluoric acid solution on the surface;

[0045] S4: putting the N-type silicon chip after cleaning with pure water into a NaOH solution with a mass percentage concentration of 5% to react for 5mins, so that the square resistance of the N-type silicon chip is increased by 20ohm / sq;

[0046] S5: Put the N-type silicon chip afte...

Embodiment 3

[0050] This embodiment provides a boron diffusion method for an N-type solar cell, comprising the following steps:

[0051] S1: The N-type silicon wafer after texturing is diffused by a high-temperature boron source to obtain a P+ emitter, and the square resistance of the N-type silicon wafer after boron diffusion is 77ohm / sq;

[0052] S2: react at room temperature for 60 seconds in a hydrofluoric acid solution with a mass percentage concentration of 8%, and remove the borosilicate glass on the surface of the N-type silicon wafer;

[0053] S3: Clean the N-type silicon chip after removing the borosilicate glass with pure water, and remove the residual hydrofluoric acid solution on the surface;

[0054] S4: Put the N-type silicon chip after cleaning with pure water into a NaOH solution with a mass percentage concentration of 6% to react for 2.5mins, so that the square resistance of the N-type silicon chip is increased by 13ohm / sq;

[0055] S5: Put the N-type silicon chip after ...

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Abstract

The invention discloses a boron diffusion method for an N-type solar cell. The boron diffusion method comprises the following steps: (1) carrying out high-temperature boron source diffusion on an N-type silicon wafer after texturing so as to obtain a P+ emitting electrode; (2) carrying out a reaction for 40 to 60 s at room temperature in a hydrofluoric acid solution to remove borosilicate glass onthe surface of the N-type silicon wafer; (3) washing the N-type silicon wafer with pure water after the borosilicate glass is removed to remove the hydrofluoric acid solution remaining on the surface; (4) putting the N-type silicon wafer after being cleaned with pure water into an NaOH solution for carrying out a reaction for 2 to 5 min so that the square resistance of the N-type silicon wafer isimproved by 8 to 20 ohm/sq; (5) putting the N-type silicon wafer after the square resistance is improved into a hydrofluoric acid and hydrochloric acid mixed solution for washing for 1 to 2 min to remove metal ions and a back oxidation layer; and (6) washing with pure water and drying. According to the method, the square resistance on the surface of the silicon wafer after boron expansion can beuniformly improved, the condition that the concentration of the surface after the boron diffusion of the N-type cell is effectively solved, and the junction depth is improved.

Description

technical field [0001] The invention relates to the technical field of solar cell preparation technology, in particular to a boron diffusion method for an N-type solar cell. Background technique [0002] The energy crisis in the 21st century is becoming more and more serious, and it is imminent to find alternative non-renewable energy sources such as oil and coal. As a clean, efficient, green and sustainable energy source, solar energy has broad prospects for development. Now crystalline silicon battery is the most mainstream product in the solar power generation market, so developing better solar crystalline silicon battery technology is our most urgent task at present. [0003] The core structure of traditional crystalline silicon cells is the P-N junction. There are two preparation methods for the P-N junction: one is to perform phosphorus diffusion on a P-type silicon wafer to obtain a P-type battery, and the other is to perform boron diffusion on an N-type silicon waf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224H01L21/223
CPCH01L21/223H01L31/022425H01L31/18Y02E10/50Y02P70/50
Inventor 张婷屈小勇郭永刚任军刚王举亮陈璐倪玉凤刘军保
Owner SPIC XIAN SOLAR POWER CO LTD
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