Low-pressure diffusion process of solar single crystal PERC

A diffusion process and solar energy technology, applied in the low-voltage diffusion process field, can solve the problems of poor short-wave response of the battery section, low conversion efficiency of the battery sheet, and low short-circuit current, and achieve improved square resistance uniformity, high open-circuit voltage and short-circuit current , the effect of low surface concentration

Active Publication Date: 2022-01-21
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The battery sheets prepared by the commonly used low-voltage diffusion process show high surface concentration and junction depth, which will inevitably lead to poor ohmic contact, high resistance in the longitudinal transmission process, and poor short-wave response of the battery section and low short-circuit current. Low, the conversion efficiency of the cell is low

Method used

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  • Low-pressure diffusion process of solar single crystal PERC
  • Low-pressure diffusion process of solar single crystal PERC
  • Low-pressure diffusion process of solar single crystal PERC

Examples

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Effect test

Embodiment 1

[0101] This embodiment provides a solar monocrystalline PERC and its low-pressure diffusion process, and the low-pressure diffusion process includes the following steps:

[0102] (1) Entering the boat: insert the silicon wafer with pyramid textured surface into the quartz boat, and then send it into the low-pressure diffusion furnace;

[0103] (2) heating up, the process conditions are: keep the pressure at 1060mbar, raise the temperature to 780°C within 400s, and simultaneously feed nitrogen at a flow rate of 2000sccm;

[0104] (3) Pre-oxidation, the process conditions are: under the condition of temperature of 780°C and pressure of 100mbar, the flow rate of 800sccm is passed into oxygen for pre-oxidation, and the time of pre-oxidation is controlled to be 150s;

[0105] (4) One-step power supply, the process conditions are: under the condition that the temperature is 780°C and the pressure is 100mbar, feed 600sccm nitrogen, 800sccm phosphorus oxychloride and 600sccm oxygen, a...

Embodiment 2

[0116] This embodiment provides a solar monocrystalline PERC and its low-pressure diffusion process, and the low-pressure diffusion process includes the following steps:

[0117] (1) Entering the boat: insert the silicon wafer with pyramid textured surface into the quartz boat, and then send it into the low-pressure diffusion furnace;

[0118] (2) heating up, the process conditions are: keep the pressure at 1060mbar, raise the temperature to 700°C within 350s, and simultaneously feed nitrogen at a flow rate of 3000sccm;

[0119] (3) Pre-oxidation, the process conditions are: under the condition of temperature of 700°C and pressure of 200mbar, the flow rate of 500sccm is passed into oxygen for pre-oxidation, and the time of pre-oxidation is controlled to be 250s;

[0120] (4) One-step power supply, the process conditions are: under the condition that the temperature is 700° C. and the pressure is 200 mbar, 400 sccm nitrogen, 600 sccm phosphorus oxychloride and 400 sccm oxygen a...

Embodiment 3

[0131] This embodiment provides a solar monocrystalline PERC and its low-pressure diffusion process, and the low-pressure diffusion process includes the following steps:

[0132] (1) Entering the boat: insert the silicon wafer with pyramid textured surface into the quartz boat, and then send it into the low-pressure diffusion furnace;

[0133] (2) heating up, the process conditions are: keep the pressure at 1000mbar, raise the temperature to 800°C within 500s, and simultaneously feed nitrogen at a flow rate of 5000sccm;

[0134] (3) Pre-oxidation, the process conditions are: under the condition of temperature of 800°C and pressure of 50mbar, the flow rate of 1000sccm is passed into oxygen for pre-oxidation, and the time of pre-oxidation is controlled to be 300s;

[0135] (4) One-step power supply, the process conditions are: under the condition that the temperature is 800°C and the pressure is 50mbar, feed 800sccm large nitrogen, 1500sccm phosphorus oxychloride and 1000sccm ox...

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Abstract

The invention provides a low-pressure diffusion process of solar single crystal PERC. The low-pressure diffusion process comprises one-step source introduction, one-step oxygen-free propulsion, two-step source introduction, two-step oxygen-free propulsion, three-step source introduction, three-step aerobic propulsion, four-step source introduction and four-step aerobic propulsion which are carried out in sequence. According to the method, four-step source introduction, two-step anaerobic propulsion and two-step aerobic propulsion are combined, the two-step anaerobic propulsion is firstly carried out after early-stage source introduction so that the surface concentration can be reduced, and the two-step aerobic propulsion is carried out after later-stage source introduction so that the diffusion length can be increased, and then the sheet resistance uniformity is improved; according to the low-voltage diffusion technology, the solar cell piece which is low in surface concentration, small in junction depth and high in uniformity can be manufactured, high open-circuit voltage and short-circuit current are achieved, and the conversion efficiency is high.

Description

technical field [0001] The invention belongs to the field of solar single crystal PERC, and in particular relates to a low-pressure diffusion process of solar single crystal PERC and its application. Background technique [0002] Solar photovoltaic cells are devices that directly convert light energy into electrical energy through the photoelectric effect. The core of solar cell preparation is the p-n junction formed by the diffusion process. Sunlight shines on the semiconductor p-n junction to form new hole-electron pairs. Under the action of the p-n junction electric field, holes flow from the n region to the p region, electrons flow from the p region to the n region, and a current is formed after the circuit is turned on. As the competition in the photovoltaic market becomes more and more fierce, improving the conversion efficiency of cells has become a necessary factor for competition. The new laser doping technology can improve the conversion efficiency of PERC. Laser ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/223
CPCH01L31/1804H01L21/223Y02E10/547Y02P70/50
Inventor 赵颖周永安任勇何悦
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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