Manufacturing method of high-K metal gate MOS (Metal Oxide Semiconductor) transistor

Abstract

The invention discloses a manufacturing method of a high-K metal gate MOS (Metal Oxide Semiconductor) transistor, which comprises the following step: injecting corresponding impurities to the space right above a channel region of the MOS transistor, so that the bottom of the channel region of the MOS transistor and the junction between the channel region and a source drain region are heavily doped with impurities which are of the same type with the impurities doped on a substrate, the source drain region of the MOS transistor is doped with impurities of which the type is opposite to that of the impurities doped on the substrate, and the doping of the channel region can not cause impurity compensation to the source drain region. Thus, the manufactured transistor has an inversely doped channel which has a low surface concentration and a high bulk concentration, and can simultaneously satisfy the requirement for high drive current and the requirement of inhibiting the short-channel effect.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits and its manufacture, in particular to a manufacturing method of a high-K metal gate MOS transistor. Background technique [0002] Metal-oxide-semiconductor field effect transistor (MOSFET for short) is the main device of modern integrated circuits. The rapid development of integrated circuits is mainly realized by continuously reducing the size of MOS devices and increasing the chip area. The benefits brought by the reduction of device size are that the channel resistance of the device is reduced, and the driving current of the device is increased, which leads to an increase in the speed of the circuit. At the same time, a smaller device scale can integrate more devices on a certain silicon chip area, which improves the integration of integrated circuits and reduces production costs. The scale of modern MOS devices has been reduced to the nanometer scale. Under this sc...

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Problems solved by technology

However, such doping will form a serious impurity compensation effect in the source and drain regions, resulting in an increase in the parasitic resistance of the source and drain regions and a decrease in the driving capability of the transistor.

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