6results about How to "High density integration" patented technology

The invention discloses a volatile threshold switching device based on an atomic-scale geometric confinement layer and a preparation method thereof. The device comprises a substrate layer, a bottom electrode layer, a functional active layer, a geometric confinement layer and a top electrode layer which are stacked in sequence, the functional active layer is used for providing active metal ions to form conductive filaments; the functional active layer is made of a two-dimensional layered ferroelectric material; the geometric confinement layer is made of hexagonal boron nitride sheets, and the thickness range of the hexagonal boron nitride sheets is 1-5 hexagonal boron nitride atomic layers. According to the invention, the h-BN material with atomic-scale lattice defects is introduced as the geometric confinement layer, and the diameter of the conductive filament formed by copper ions in the functional active layer is physically limited by using the atomic-scale ion sieve effect of the h-BN material, so that the problem of failure caused by overgrowth of the filament in a traditional device is solved.

This utility model relates to the field of hydrogen energy technology, and in particular to an integrated multi-functional high-pressure hydrogen cylinder valve. It includes a main control solenoid valve, a manual valve, an overflow valve, a venting valve, and a temperature-driven venting device mounted on the valve body. All of these components are located on the side of the valve body. This utility model employs an internal channel layout, integrating multiple modules such as the main control solenoid valve, manual valve, overflow valve, and temperature-driven venting device. This significantly simplifies the pipeline structure, reduces leakage risk, and achieves a revolutionary structure characterized by high-density integration, ultra-thin flatness, and high reliability maintenance.

This application relates to the field of in-memory computing memory technology, and more particularly to a three-dimensional ferroelectric memory with an IGZO channel and its fabrication method. The three-dimensional ferroelectric memory with an IGZO channel includes: a bottom global gate line; a center select gate extending vertically relative to the bottom global gate line; a semiconductor stack structure including a gate metal layer, a ferroelectric layer, a gate oxide layer, and an IGZO channel sequentially surrounding the center select gate; a drain and a source extending horizontally relative to the center select gate into the semiconductor stack structure and contacting the ferroelectric layer; and multiple pairs of drains and sources spaced apart along the extension direction of the center select gate to form multiple ferroelectric memory transistor cells. The three-dimensional ferroelectric memory with an IGZO channel of this application improves the durability and reliability of non-volatile memory devices.

This application relates to the field of flexible electronics technology, and more particularly to multilayer flexible electronic devices, their fabrication methods, and applications. The fabrication method includes: providing a film unit, comprising a flexible film and a circuit bonded to a surface of the flexible film, wherein the surface of the film unit with the circuit bonded is designated as a first surface, and the surface opposite to the first surface is designated as a second surface; immersing the film unit and a first substrate in a liquid, performing a first bonding treatment on the first surface and the surface of the first substrate, and removing the film unit from the liquid to obtain a film composite unit; using the first surface of the film unit that has not undergone the first bonding treatment as a front surface, and the second surface of the film composite unit as a rear surface, performing a second bonding treatment on the front and rear surfaces; peeling the first substrate in the film composite unit after the second bonding treatment, so that the first surface in the film composite unit forms a new front surface; repeating the second bonding treatment and peeling treatment steps to obtain a multilayer flexible electronic device.

The application discloses a manufacturing method of a ceramic micro-flow channel carrier for high-power devices and relates to the field of ceramics. The manufacturing method comprises the following steps: after punching a green ceramic sheet, tungsten slurry is used to fill the holes and conductor patterns are printed on the surface of the green ceramic sheet; then, a bottom plate micro-flow channel layer is laminated and a sacrificial material is filled in the micro-flow channel cavities; then, the bonding interface between the cover plate and the bottom plate is subjected to ultraviolet laser roughening treatment; then, two-step isostatic pressing forming treatment is performed; after cutting into a bar, the bar is subjected to glue removal, sintering, hot pressing leveling, grinding, polishing and seed layer deposition; then, exposure development is performed and the line layer is thickened by electroplating; then, secondary photolithography processing is performed on the chip eutectic area to open a window; finally, gold tin evaporation treatment, stripping of the photoresist and cutting are performed, so that the ceramic micro-flow channel carrier for high-power devices is obtained. According to the specific manufacturing process, the mechanical strength, the dielectric property, the heat fatigue resistance and the micro-flow channel pressure resistance are improved while the heat dissipation property is maintained.

The application belongs to the technical field of optical electric field sensing, and discloses a U-shaped cascade waveguide nested micro-ring resonant cavity type electric field sensor and a preparation method thereof. The electric field sensor comprises an input coupling unit, an optical sensitive unit and a spectrum detection output interface. The optical sensitive unit comprises an incident grating, a U-shaped cascade waveguide structure, a nested micro-ring resonant cavity and an electro-optic polymer film. The nested micro-ring resonant cavity comprises a reference resonant cavity and a sensing resonant cavity. The electro-optic polymer film covers the cladding layer of the sensing resonant cavity. The application expands the equivalent free spectral range of a single resonant unit through a U-shaped feedback structure, utilizes the free spectral range difference between the two resonant units to form a vernier effect to amplify the sensing response, and simultaneously adopts a heterogeneous integrated vertical coupling mode to improve the system integration and packaging consistency, and improves the sensing sensitivity and measurement range.