Three-dimensional NAND ferroelectric memory and preparation method thereof

Abstract

The invention discloses a three-dimensional NAND ferroelectric memory and a preparation method thereof, and the three-dimensional NAND ferroelectric memory comprises a substrate layer (1), a conductive layer (2) and a stacked layer which are sequentially stacked, and the stacked layer comprising a plurality of isolation layers and a plurality of control gate electrode layers which are stacked; anda plurality of channel groups, each channel group in the plurality of channel groups comprising two channels; the two channels being arranged in a manner of penetrating through the laminated layer; the bottom ends of the two channels being embedded into the conductive layer (2). The bottom ends of the two channels are communicated, a separation layer (6) for separating the control gate electrodelayers of the two channels is arranged between the two channels, and a buffer layer (7), a ferroelectric film layer (8), a channel layer (9) and a channel group (5) formed by connecting a plurality offerroelectric field effect transistors (13) in series are sequentially arranged on the inner walls of the channels. More compact wiring can be obtained through channel group arrangement of the memory, higher-density integration is realized, and the reliability is higher.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a three-dimensional NAND ferroelectric memory and a preparation method thereof. Background technique [0002] Transistor-type ferroelectric memory - ferroelectric field effect transistor (FeFET) is to replace the gate dielectric layer in field effect transistor (MOSFET) with ferroelectric thin film material, and control the conduction of channel current by changing the polarization direction of ferroelectric thin film material. On and off, so as to realize the storage of information. FeFET memory has the advantages of non-volatility, low power consumption, fast read and write speed, simple cell structure and high theoretical storage density. Therefore, FeFET memory is considered to be one of the most potential new types of memory. [0003] Three-dimensional integration is an important direction for realizing high-density FeFET memory. However, the three-dimensional FeFET memory...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a three-dimensional NAND ferroelectric memory and its preparation method to solve the problems of inconvenient wiring, low readout current and insufficient reliability in the prior art

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