75results about How to "Increase read current" patented technology

A magnetoresistance effect element is also located between second wiring and common wiring. The magnetoresistance effect element is electrically connected to the second wiring without a spin filter. When a reading current is supplied between the second wiring for supplying a reading current and the common wiring, since this is not supplied via a spin filter, no spin polarized current is supplied into the magnetoresistance effect element, so that it becomes difficult to magnetization-reverse a magnetosensitive layer. Even in a structure where, in order to improve recording density, the magnetosensitive layer is reduced in area so as to lower a writing current, no magnetization reversal occurs due to a supply of the reading current, and information can be read out without making the reading current considerably small in comparison with the writing current.

The embodiment of the invention provides a flash memory unit for a shared source line and a forming method thereof. The provided flash memory unit for the shared source line comprises a semiconductor substrate, a source line, a floating gate dielectric layer, a floating gate, a control gate dielectric layer, a control gate, side wall dielectric layers, side walls, a tunneling oxide layer, a word line, a drain electrode and a source electrode, wherein the source line is positioned on the surface of the semiconductor substrate; the floating gate dielectric layer, the floating gate, the control gate dielectric layer and the control gate are sequentially positioned on the surface of the semiconductor substrate on two sides of the source line; the side wall dielectric layers are positioned between the source line and the floating gate as well we between the source line and the control gate; the side walls are positioned on the floating gate and the control gate, which are far from the source line; the tunneling oxide layer is adjacent to the side wall and is positioned on the surface of the semiconductor substrate; the word line is positioned on the surface of the tunneling oxide layer; the drain electrode is positioned in the semiconductor substrate at one side of the word line, which is far from the source line; the source electrode is positioned in the semiconductor substrate which is right opposite to the source line; and the floating gate is provided with a p-type doping end which is close to the source line, wherein the doping type of the floating gate is in a p type and the doping type of other parts is respectively in an n type.

Loadless 4T SRAM cells, and methods for operating such SRAM cells, which can provide highly integrated semiconductor memory devices while providing increased performance with respect to data stability and increased I/O speed for data access operations. A loadless 4T SRAM cell comprises a pair of access transistors and a pair of pull-down transistors, all of which are implemented as N-channel transistors (NFETs or NMOSFETS). The access transistors have lower threshold voltages than the pull-down transistors, which enables the SRAM cell to effectively maintain a logic “1” potential during standby. The pull-down transistors have larger channel widths as compared to the access transistors, which enables the SRAM cell to effectively maintain a logic “0” potential at a given storage node during a read operation. A method is implemented for dynamically adjusting the threshold voltages of the transistors of activated memory cells during an access operation to thereby increase the read current or performance of the accessed memory cells.

A memory device and method of operation is provided, the memory device having a plurality of memory cells arranged in at least one column, with each column having at least one bit line and a supply voltage line associated therewith. A capacitance exists between the supply voltage line and associated at least one bit line for each column. Control circuitry is used to control, for each column, connection of a voltage source to the associated supply voltage line. For a predetermined period during a memory access operation, the control circuitry disconnects the supply voltage line for at least the selected column from the voltage source, such that a voltage level on that supply voltage line changes in response to any change in voltage on the associated at least one bit line. This basic mechanism can be used to provide a variety of assist mechanisms, such as a write assist mechanism, a bit flip assist mechanism and a read assist mechanism. The technique of the present invention provides a particularly simple and power efficient technique for providing such assist mechanisms.

The invention provides an OTP memory and a programming method and a reading method thereof. The OTP embedded memory comprises a plurality of word lines, a plurality of bit lines, and a plurality of programming lines; the programming lines are connected with the control end of the anti-fuse in each storage unit to provide a control voltage for the anti-fuse; a control voltage is provided for the control end of the gating tube by the word lines; therefore, the control voltage of the control end of the anti-fuse is separated from the control voltage of the control end of the gating tube, the control voltage of the gating tube is not limited by the control voltage of the anti-fuse, the control voltage of the gating tube can be further reduced, the channel length of the gating tube can be further reduced, and the area of a storage unit of the OTP embedded memory is reduced. Or, on the basis of not changing the channel length of the gating tube, the control voltage of the antifuse is independently controlled, the channel width of the gating tube can be relatively reduced, and the area of the storage unit of the OTP embedded memory can also be reduced.

The invention discloses a static random access memory (SRAM) based on a back gate structure of a FDSOI device, all transistors on the novel static random access memory are FDSOI devices, and back gates of the devices are connected with a word line WL. When the SRAM performs read-write operation, the word line is at a high level, so that the threshold voltage of the PMOS is increased, and the threshold voltage of the NMOS is reduced, thereby enhancing the write-in capability of the SRAM and improving the read current; in the maintaining state, the word line WL is at a low level, and the threshold voltage of the device on the SRAM is not different from the threshold voltage of the device on the traditional FDSOI SRAM, so that the static power consumption is not changed.

The invention relates to a nanocrystal nonvolatile memory based on strained silicon in the technical fields of nano electronic components and nano processing. The nanocrystal nonvolatile memory based on strained silicon comprises a silicon substrate, a GeSi gradually-doped buffer layer, a Gel-xSix relieving layer, a strained silicon layer, lightly-doped drain electrodes, a source conduction region, a drain conduction region, a tunneling dielectric layer, a nanocrystal charge storage layer, a control grid dielectric layer and a grid electrode material layer, wherein the GeSi gradually-doped buffer layer, the Gel-xSix relieving layer and the strained silicon layer are deposited on the silicon substrate; the lightly-doped drain electrodes, the source conduction region and the drain conduction region are arranged at two sides in the silicon substrate; the tunneling dielectric layer covers a current carrier channel arranged between the source conduction region and the drain conduction region; the nanocrystal charge storage layer covers the tunneling dielectric layer; the control grid dielectric layer covers the tunneling dielectric layer; and the grid electrode material layer covers the control grid dielectric layer. According to the invention, the mobility is increased by utilizing the strained silicon, thereby increasing the reading current, and simplifying a peripheral circuit; the nanocrystal nonvolatile memory based on strained silicon adopts the nanocrystal as a floating grid material, so that the performance of a storage device is improved, and particularly, the storage performance, such as storage windows, programming/erasing speed, data retention characteristic and the like, is improved comprehensively.

The invention discloses a three-dimensional NAND ferroelectric memory and a preparation method thereof, and the three-dimensional NAND ferroelectric memory comprises a substrate layer (1), a conductive layer (2) and a stacked layer which are sequentially stacked, and the stacked layer comprising a plurality of isolation layers and a plurality of control gate electrode layers which are stacked; anda plurality of channel groups, each channel group in the plurality of channel groups comprising two channels; the two channels being arranged in a manner of penetrating through the laminated layer; the bottom ends of the two channels being embedded into the conductive layer (2). The bottom ends of the two channels are communicated, a separation layer (6) for separating the control gate electrodelayers of the two channels is arranged between the two channels, and a buffer layer (7), a ferroelectric film layer (8), a channel layer (9) and a channel group (5) formed by connecting a plurality offerroelectric field effect transistors (13) in series are sequentially arranged on the inner walls of the channels. More compact wiring can be obtained through channel group arrangement of the memory, higher-density integration is realized, and the reliability is higher.

The invention discloses a forming method for a memory cell of a flash memory. The forming method comprises the steps of: providing a semiconductor substrate; forming a first insulating layer on the surface of the semiconductor substrate; forming a floating gate polycrystalline silicon layer on the surface of the first insulating layer; forming a stress layer on the surface of the floating gate polycrystalline silicon layer; after the forming of the stress layer, conducting thermal annealing on the stress layer, the floating gate polycrystalline silicon layer, the first insulating layer and the semiconductor substrate; after thermal annealing, removing the stress layer; after the removal of the stress layer, forming a source line layer passing through the floating gate polycrystalline silicon layer and the first insulating layer on the surface of the semiconductor substrate; and removing part of the floating gate polycrystalline silicon layer and forming a floating gate layer on the surface of the first insulating layer on two sides of the source line layer, wherein the floating gate layer is electrically isolated from the source line layer. The forming method for the memory cell of the flash memory can retain stress inside the floating gate layer, thereby enhancing the channel carrier mobility of the memory cell of the flash memory and reducing the size of the memory cell of the flash memory simultaneously when improving the data retention.

The invention discloses a nonvolatile memory, which includes a basement, an active layer, an element isolation layer and a memory cell. The active layer is arranged on the basement and protrudes from the surface of the basement. A plurality of element isolation layers are arranged on both sides of the active layer, and the surface of the element isolation layer is lower than the surface of the active layer. The memory cell comprises a control grid, a charge storage layer, a roof cover layer and a source electrode/drain electrode region. The control grid is arranged on the basement across the active layer. The charge storage layer is arranged on the lateral wall of the active layer and is located between the control grid and the active layer. The roof cover layer is arranged on the top of the active layer and is located between the control grid and the active layer. The source electrode/drain electrode region is arranged in the active layer at the both sides of the control grid.

The invention relates to a storage unit and a storage array erasing method. The storage unit comprises a P-type well region, a drain electrode, a source electrode, a first control grid electrode, a second control grid electrode and a middle electrode; the storage array erasing method comprises the following steps: applying first bias voltage to the P-type well region; applying second bias voltage to the drain electrode; applying third bias voltage to the source electrode; applying minus 6V-minus 8V voltage to the first control grid electrode; applying minus 6V-minus 8V voltage to the second control grid electrode; and applying 8V-9V voltage to the middle electrode, wherein the value of the first bias voltage is negative, and the values of the first bias voltage, the second first bias voltage and the third first bias voltage are equal. The storage unit and the storage array erasing method can improve the durability of the storage unit.

A semiconductor storage device includes a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a single gate electrode formed on the gate insulating film, two charge holding portions formed on both sides of the gate electrode, source/drain regions respectively corresponding to the charge holding portions, and a channel region disposed under the single gate electrode. A memory function implemented by these two charge holding portions and a transistor operation function implemented by the gate insulating film is separated from each other for securing sufficient memory function as well as easily suppressing short channel effect by making the gate insulating film thinner.

The invention relates to a fabrication method of a semiconductor device, and discloses a fabrication method of a flash memory unit. According to the fabrication method of the flash memory unit, P-type impurity injected to a logic grate of a select gate P-channel metal oxide semiconductor (PMOS) transistor region is diffused to an N-type floating gate poly-silicon layer by a subsequent high-temperature process after the logic gate of the select gate PMOS transistor region and a logic gate of a control gate PMOS transistor region are separated, so that an N-type floating gate is changed to a P-type floating gate, a select gate PMOS transistor with a surface channel having a relatively threshold value can be successfully fabricated on the flash memory unit with a size being 55 nanometers, and mass production is achieved. Moreover, by the process of growing the logic gates and the process of separating the logic gates, the floating gate doping of the control gate PMOS transistor cannot be affected as well as the surface channel, having the relatively threshold value, of the select gate PMOS transistor is formed.

Semiconductor memory having memory cells, each including first and second conductively-doped contact regions and a channel region arranged between the latter, formed in a web-like rib made of semiconductor material and arranged one behind the other in this sequence in the longitudinal direction of the rib. The rib has an essentially rectangular shape with an upper side of the rib and rib side faces lying opposite. A memory layer is configured for programming the memory cell, arranged on the upper side of the rib spaced apart by a first insulator layer, and projects in the normal direction of the one rib side face over one of the rib side faces so that the one rib side face and the upper side of the rib form an edge for injecting charge carriers from the channel region into the memory layer. A gate electrode is spaced apart from the one rib side face by a second insulator layer and from the memory layer by a third insulator layer, electrically insulated from the channel region, and configured to control its electrical conductivity.

The invention discloses a three-dimensional groove type ferroelectric memory and a preparation method thereof. The three-dimensional groove type ferroelectric memory comprises a substrate (1) and a conductive layer (2) arranged on the substrate (1). A laminated structure arranged on the conductive layer (2) comprises a plurality of horizontal isolation layers (3) and control gate electrodes (4) which are arranged in an overlapping manner. The plurality of trench-type memory cell strings (5) vertically penetrate through the laminated structure, and each trench-type memory cell string (5) comprises a trench hole (11) which vertically penetrates through the laminated structure and has a trench bottom embedded into the conductive layer (2). A buffer layer (6), a ferroelectric film layer (7), achannel layer (8) and a filling layer (9) are sequentially laid on the side wall and the groove bottom of the groove hole (11). The control gate electrode (4), the buffer layer (6), the ferroelectricfilm layer (7) and the channel layer (8) form a plurality of ferroelectric field effect transistors which are connected in series. According to the ferroelectric memory, more compact wiring can be obtained, and higher-density integration can be realized; during preparation, required materials are sequentially deposited, etching is not needed, and the reliability of the ferroelectric memory is ensured.

The invention discloses a NOR flash memory. In the flash cell array of the storage area of the NOR flash memory, active regions are in strip shapes and are arranged in parallel. The polycrystalline silicon of polycrystalline silicon control gates of the flash cells in the same row are connected together to form a polycrystalline silicon row. A polycrystalline silicon floating gate is on top of theactive region perpendicularly intersecting the polycrystalline silicon row and is isolated by a first gate oxide layer. A drain region comprises a self-aligned conformal injection region extending tothe sides of the active regions. The position of the self-aligned conformal injection region is defined by the self-aligned etched back field oxygen. The self-aligned etch back region of the field oxide is formed by the self-aligned definition of the gate structure and the active region after the gate structure etching. In the source region, a self-aligned conformal injection region is also superimposed. The invention also discloses a method for manufacturing a NOR flash memory. The NOR flash memory can improve the programming efficiency without changing the gate structure, and can also reduce electric leakage and improve the performance of the device.

The invention provides a 3D NAND preparation method adopting a novel channel hole electric connecting layer material and a 3D NAND. The preparation method comprises the steps of depositing a substratestack structure on a substrate; etching the stack structure to form channel holes, wherein the channel holes are connected to the substrate to form a silicon groove of a certain depth; depositing a graphene epitaxial layer in the silicon groove; forming a channel hole side wall stack structure; etching the stack structure; and depositing a graphene connecting layer, wherein the graphene layer inthe channel hole side wall stack structure is connected with the graphene epitaxial layer through the graphene connecting layer. The thin graphene thin film has very high mobility and mechanical strength, so that the read current can be increased and channel hole structural stability can be improved.