NOR flash memory and manufacture method thereof
A manufacturing method and technology of flash memory, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of inability to eliminate the mutual interference of flash memory cells, increase the coupling of flash memory cells, and large floating gate area, so as to achieve a large erasing effect The effect of reading current, reducing resistance, and increasing junction area
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[0065] Manufacturing method of existing NOR flash memory:
[0066] Such as figure 1 Shown is the layout structure of the storage area of the existing NOR flash memory; Figure 2A It is the back edge of gate structure formation in the existing NOR flash memory manufacturing method figure 1 Sectional view of line BB; Figure 2B It is the source and drain injection timing in the existing NOR flash memory manufacturing method figure 1 Sectional view of line DD; Figure 2C It is the source and drain injection timing in the existing NOR flash memory manufacturing method figure 1 The cross-sectional view of the middle EE line; the existing manufacturing method of NOR flash memory includes the following steps:
[0067] Step 1: Provide a semiconductor substrate 1, form a field oxygen 2 in the semiconductor substrate 1 and isolate the active region 103 by the field oxygen 2.
[0068] In the existing method, the semiconductor substrate 1 is a silicon substrate.
[0069] Generally, the field oxy...
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