Three-dimensional groove type ferroelectric memory and preparation method thereof

Abstract

The invention discloses a three-dimensional groove type ferroelectric memory and a preparation method thereof. The three-dimensional groove type ferroelectric memory comprises a substrate (1) and a conductive layer (2) arranged on the substrate (1). A laminated structure arranged on the conductive layer (2) comprises a plurality of horizontal isolation layers (3) and control gate electrodes (4) which are arranged in an overlapping manner. The plurality of trench-type memory cell strings (5) vertically penetrate through the laminated structure, and each trench-type memory cell string (5) comprises a trench hole (11) which vertically penetrates through the laminated structure and has a trench bottom embedded into the conductive layer (2). A buffer layer (6), a ferroelectric film layer (7), achannel layer (8) and a filling layer (9) are sequentially laid on the side wall and the groove bottom of the groove hole (11). The control gate electrode (4), the buffer layer (6), the ferroelectricfilm layer (7) and the channel layer (8) form a plurality of ferroelectric field effect transistors which are connected in series. According to the ferroelectric memory, more compact wiring can be obtained, and higher-density integration can be realized; during preparation, required materials are sequentially deposited, etching is not needed, and the reliability of the ferroelectric memory is ensured.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a three-dimensional trench type ferroelectric memory and a preparation method thereof. Background technique [0002] Transistor type ferroelectric memory - ferroelectric field effect transistor (FeFET) is to replace the gate dielectric layer in field effect transistor (MOSFET) with ferroelectric thin film material, and control the conduction of channel current by changing the polarization direction of ferroelectric thin film material Pass and cut off, so as to realize the storage of information. FeFET memory has the advantages of non-volatility, low power consumption, fast read and write speed, etc., and the unit structure is simple, and the theoretical storage density is large. Therefore, FeFET memory is considered to be one of the most potential new memory. [0003] However, for a long time, the actual storage density of FeFET memory is quite different from the theoretical val...

AI Technical Summary

Problems solved by technology

However, the three-dimensional integration technology that can guarantee high-density integration, low-cost production and high reliability at the same time remains to be broken through

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