Method for manufacturing and using horizontal electrode configuration structure of nanoscale phase change memory unit

Abstract

The invention discloses a method for manufacturing and using a horizontal electrode configuration structure for a nanoscale phase-change memory unit. The lower phase-change material layer and the upper electrode material layer are grown sequentially according to the procedures; during processing, the upper electrode material layer is based on the same process. The photolithography process forms the upper electrode of the outer ring common drain ground and the upper electrode of the inner source end; when in use, the upper layer electrode of the inner source end is connected to the source end, and the upper layer electrode of the outer ring common drain ground is common drain ground, and the source and drain end cannot be exchanged, and the current flows from The equipotential surface of the upper layer electrode at the inner source end flows horizontally to the outer ring equipotential surface of the outer ring common drain grounding upper layer electrode. For the high-resistance amorphous state, compared with the square structure, the equivalent resistance value R is significantly reduced, and the read current is increased, which is convenient for correct reading. Moreover, the horizontal flow of current reduces the current loss of elements connected in series at both ends in a general sense, thereby reducing the threshold current required for the amorphization process and reducing the overall power consumption.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a method for manufacturing and using a horizontal electrode configuration structure for a nanoscale phase change memory unit, in particular to the design and manufacture of a phase change memory element based on a chalcogenide phase change material method and its application. Background technique [0002] The phase change memory based on the chalcogenide phase change material can store information and data through the huge resistance difference between the crystalline phase and the amorphous phase, and can even achieve multi-level phase change storage. This phase-change process has the advantages of low power consumption and high-density cost as the size decreases, so the industry pays great attention to the development of nanoscale phase-change memory. [0003] At present, there are relatively mature applications in the structural design of phase change units, such as T-shaped str...

AI Technical Summary

Problems solved by technology

Especially below the 10nm scale, the resistance of the amorphous phase becomes very large, resulting in too small a read current to read correctly, and a larger current is required to read

[0005] Therefore, it is necessary to propose a method for manufacturing a new electrode configuration structure suitable for nanoscale phase change units to solve the problem of too small read current and power consumption in the process of high-resistance amorphization at the nanoscale

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