Electrode configuration structure for nanoscale phase-change memory cells

A phase change memory and configuration structure technology, applied in the field of microelectronics, can solve the problems of large difference in resistance between two phases, inability to read, large difference in amorphous resistance, etc., and achieve the reduction of equivalent resistance R and read current Enlarged, easy-to-read effect

Active Publication Date: 2021-03-09
HUAZHONG UNIV OF SCI & TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially below the scale of 10nm, the resistance value of the amorphous phase becomes very large, resulting in the reading current being too small to read correctly, requiring a larger current to read; while the resistance value of the crystalline phase is very small, and it is easy to read with a large current. Tunneling shows the characteristics of a short-circuit circuit, and the difference between the resistance value of the amorphous state is too large, and it cannot be read within the range of the same test instrument
[0005] Therefore, it is necessary to propose an electrode configuration structure suitable for nanoscale phase change units to solve the problem of large differences in resistance between the two phases.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrode configuration structure for nanoscale phase-change memory cells
  • Electrode configuration structure for nanoscale phase-change memory cells
  • Electrode configuration structure for nanoscale phase-change memory cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other. The present invention will be further described in detail below in combination with specific embodiments.

[0032] As a preferred embodiment of the present invention, such as figure 1 As shown, the present invention provides a kind of electrode configuration structure for nanoscale phase change memory unit, wherein:

[0033] The electrode configuration structure 100 includes an upper electrode m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an electrode configuration structure for a nanoscale phase-change memory unit, wherein: the electrode configuration structure includes an upper electrode material layer, an intermediate phase-change material layer, and a lower electrode material layer; the upper electrode material layer includes outer ring electrodes and The internal source electrode, the upper electrode material layer and the lower electrode material layer have an asymmetrical upper and lower electrode structure, and the horizontal projections are intersecting. In the same unit, two electrode configurations are constructed at the same time. In the process of high-resistance amorphization, the horizontal working mode is adopted to significantly reduce the equivalent resistance R, and the reading current increases, which is convenient for correct reading; During the low-resistance crystallization process, the vertical working mode is adopted, which increases the equivalent resistance value R, reduces the working current, avoids the tunneling of high current, and prolongs the life of the device; therefore, the two-phase resistance of the nanoscale phase change material is balanced. The disparity difference of value simplifies and unifies the external access circuit.

Description

technical field [0001] The invention belongs to the field of microelectronics and relates to an electrode configuration structure for a nanoscale phase-change memory unit, in particular to the design and application of a phase-change memory element based on a chalcogenide phase-change material. Background technique [0002] The phase change memory based on the chalcogenide phase change material can store information and data through the huge resistance difference between the crystalline phase and the amorphous phase, and can even achieve multi-level phase change storage. This phase-change process has the advantages of low power consumption and high-density cost as the size decreases, so the industry pays great attention to the development of nanoscale phase-change memory. [0003] At present, there are relatively mature applications in the structural design of phase change units, such as T-shaped structure and side wall contact structure, etc. The purpose is to reduce the cu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/231
Inventor 马平童浩缪向水
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products