Electrode configuration structure for nanoscale phase-change memory cells

Abstract

The invention discloses an electrode configuration structure for a nanoscale phase-change memory unit, wherein: the electrode configuration structure includes an upper electrode material layer, an intermediate phase-change material layer, and a lower electrode material layer; the upper electrode material layer includes outer ring electrodes and The internal source electrode, the upper electrode material layer and the lower electrode material layer have an asymmetrical upper and lower electrode structure, and the horizontal projections are intersecting. In the same unit, two electrode configurations are constructed at the same time. In the process of high-resistance amorphization, the horizontal working mode is adopted to significantly reduce the equivalent resistance R, and the reading current increases, which is convenient for correct reading; During the low-resistance crystallization process, the vertical working mode is adopted, which increases the equivalent resistance value R, reduces the working current, avoids the tunneling of high current, and prolongs the life of the device; therefore, the two-phase resistance of the nanoscale phase change material is balanced. The disparity difference of value simplifies and unifies the external access circuit.

Description

technical field [0001] The invention belongs to the field of microelectronics and relates to an electrode configuration structure for a nanoscale phase-change memory unit, in particular to the design and application of a phase-change memory element based on a chalcogenide phase-change material. Background technique [0002] The phase change memory based on the chalcogenide phase change material can store information and data through the huge resistance difference between the crystalline phase and the amorphous phase, and can even achieve multi-level phase change storage. This phase-change process has the advantages of low power consumption and high-density cost as the size decreases, so the industry pays great attention to the development of nanoscale phase-change memory. [0003] At present, there are relatively mature applications in the structural design of phase change units, such as T-shaped structure and side wall contact structure, etc. The purpose is to reduce the cu...

AI Technical Summary

Problems solved by technology

Especially below the scale of 10nm, the resistance value of the amorphous phase becomes very large, resulting in the reading current being too small to read correctly, requiring a larger current to read; while the resistance value of the crystalline phase is very small, and it is easy to read with a large current. Tunneling shows the characteristics of a short-circuit circuit, and the difference between the resistance value of the amorphous state is too large, and it cannot be read within the range of the same test instrument

[0005] Therefore, it is necessary to propose an electrode configuration structure suitable for nanoscale phase change units to solve the problem of large differences in resistance between the two phases.

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