Method for manufacturing and using horizontal electrode configuration structure of nano-scale phase change memory cell

Abstract

The invention discloses a method for manufacturing and using a horizontal electrode configuration structure for a nano-scale phase change memory cell. A lower phase change material layer and an upperelectrode material layer are sequentially grown in accordance with the procedure. During processing, the upper electrode material layer forms an outer ring common drain ground electrode and an internal source terminal electrode based on the photolithography process of the same. When in use, the internal source terminal electrode is connected with a source terminal; the outer ring common drain ground electrode is grounded; and source and drain terminal exchange cannot be carried out. Current flows horizontally from the equipotential surface of the internal source terminal electrode to the outerring equipotential surface of the outer ring common drain ground electrode. For the high-resistance amorphous state, compared with a square structure, the structure has significantly reduced equivalent resistance value R and increased read current, and facilitates correct reading. In addition, the horizontal flow direction of the current reduces the series current loss of a two-terminal element in the general sense, thereby reducing the threshold current required for the amorphization process and reducing the overall power consumption.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a method for manufacturing and using a horizontal electrode configuration structure for a nanoscale phase change memory unit, in particular to the design and manufacture of a phase change memory element based on a chalcogenide phase change material method and its application. Background technique [0002] The phase change memory based on the chalcogenide phase change material can store information and data through the huge resistance difference between the crystalline phase and the amorphous phase, and can even achieve multi-level phase change storage. This phase-change process has the advantages of low power consumption and high-density cost as the size decreases, so the industry pays great attention to the development of nanoscale phase-change memory. [0003] At present, there are relatively mature applications in the structural design of phase change units, such as T-shaped str...

AI Technical Summary

Problems solved by technology

Especially below the 10nm scale, the resistance of the amorphous phase becomes very large, resulting in too small a read current to read correctly, and a larger current is required to read

[0005] Therefore, it is necessary to propose a method for manufacturing a new electrode configuration structure suitable for nanoscale phase change units to solve the problem of too small read current and power consumption in the process of high-resistance amorphization at the nanoscale

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