Three-dimensional semiconductor device and manufacturing method thereof

A device manufacturing method and semiconductor technology, which are applied to semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of low reading speed, small switching current and current ratio, inability to apply to high-density, high-speed memory cells, etc. Achieve the effect of increasing the reading current and reading speed, increasing the on-state current and the current change

Active Publication Date: 2018-03-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large number of storage strings in the polysilicon vertical channel, for example, usually 14 stacked MOSFET structures, the on-off current and current ratio are small, resulting in small read current and low read speed, which cannot be applied to high-speed applications. Density, high-speed memory cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional semiconductor device and manufacturing method thereof
  • Three-dimensional semiconductor device and manufacturing method thereof
  • Three-dimensional semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The features and technical effects of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings and in combination with schematic embodiments, and a semiconductor storage device and a manufacturing method thereof that effectively improve the read current and read speed of a storage array are disclosed. It should be pointed out that similar reference numerals represent similar structures, and the terms "first", "second", "upper", "lower" and the like used in this application can be used to modify various device structures or manufacturing processes . These modifications do not imply spatial, sequential or hierarchical relationships of the modified device structures or fabrication processes unless specifically stated.

[0021] Such as figure 1 As shown, a stack structure 2 of first material layers 2A and second material layers 2B is alternately formed on a substrate 1 . The material of the substrate 1 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a three-dimensional semiconductor device which comprises multiple storage units. Each storage unit comprises a channel layer, multiple interlayer insulating layers, multiple grid electroconductive layers, a grid dielectric layer, a drain electrode and a source electrode, each channel layer is distributed along a direction perpendicular to the surface of a substrate, the interlayer insulating layers and the grid electroconductive layers are alternately stacked along the side wall of the corresponding channel layer, each grid dielectric layer is positioned between the interlayer insulating layers and the side wall of the corresponding channel layer, each drain electrode is positioned at the top of the corresponding channel layer, each source electrode is positioned in the substrate between two adjacent storage units, and multiple second grid dielectric layers and multiple second channel layers are further arranged around each storage unit. According to the three-dimensional semiconductor device and a manufacturing method thereof, a current passage formed by stacking auxiliary MOSFET strings (metal oxide semiconductor field effect transistor) is formed around a vertical channel, and on-state current and electrorheology of storage strings are increased effectively, so that reading current and reading speed of a storage array are increased.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a three-dimensional semiconductor storage device and a manufacturing method thereof. Background technique [0002] In order to improve the density of memory devices, the industry has made extensive efforts to develop methods of reducing the size of two-dimensionally arranged memory cells. As the size of memory cells in two-dimensional (2D) memory devices continues to shrink, signal collisions and interference can increase significantly, making it difficult to perform multi-level cell (MLC) operations. In order to overcome the limitations of 2D memory devices, the industry has developed memory devices with a three-dimensional (3D) structure to increase integration density by three-dimensionally arranging memory cells on a substrate. [0003] Specifically, a multilayer stack structure (for example, a plurality of ONO structures alternating with oxides an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L29/10
Inventor 霍宗亮
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap