Flash memory and a reading method thereof

Abstract

The invention relates to a semiconductor device, and discloses a flash memory and a reading method thereof. In the invention, each flash memory unit in the flash memory includes a selection grid PMOS transistor, a control grid PMOS transistor and a reading selection grid PMOS transistor. The selection grid PMOS transistor, the control grid PMOS transistor and the reading selection grid PMOS transistor are in series connection through a first electrode and a second electrode; the absolute values of electrical thickness, channel length and threshold voltage of a grid oxide layer of the reading selection grid PMOS transistor are less than the corresponding values of the selection grid PMOS transistor. The 3T PMOS flash memory provided by the invention is dedicated to the reading select grid PMOS transistor, can improve the reading efficiency overall, effectively reduce the read power, and overcome the defects of long charge and discharge time, high dynamic current and high reading power consumption of the existing 2T PMOS flash memory in reading operations.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a flash memory and a reading method thereof. Background technique [0002] The existing embedded 2T pMOS flash memory array is composed of repeatedly arranged 2T pMOS flash memory cells. The basic structure of the flash memory cells is as follows: figure 1 shown. A 2T PMOS flash memory cell is formed by a select gate PMOS transistor (the gate potential of which is controlled by gate line SG-1) and a control gate PMOS transistor (whose gate potential is controlled by word line WL-1) connected in series. The main process parameters of the select gate PMOS transistor are as follows: "The electrical thickness of the gate oxide layer is 8nm-11nm, and the channel length is 100nm-300nm". The main process parameters of the control gate PMOS transistor are as follows: the electrical thickness of the gate oxide layer is 8nm~11nm (formed synchronously with the gate oxide layer of the selection ga...

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Problems solved by technology

[0017] The object of the present invention is to provide a kind of flash memory and reading method thereof, 3T PMOS flash memory of the present invention can improve the read efficiency of flash memory as a whole, effectively reduce reading power consumption, overcome existing 2T PMOS flash memory tube in the read operation Disadvantages of long charging and discharging time, excessive dynamic current, and high reading power consumption

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