Memory array and electronic equipment

Abstract

The invention discloses a memory array and electronic equipment. The memory array comprises a plurality of memory units arranged in an array way, wherein each memory unit comprises a plurality of parallel bit lines and word lines which are arranged in parallel on the bit lines and vertical to the bit lines, each bit line is connected with the source electrode or the drain electrode of each memory unit in a column direction, each word line is connected with the grid electrode of each memory unit in a row direction, the grid electrode of each memory unit comprises double grid structures and a selection grid arranged between the double grid structures, and the double grid structures are arranged in parallel on a substrate. The electronic equipment is equipped with the memory array. The memory array and the electronic equipment are designed for an electric erasable programmable read-only memory, so that crosstalk can be prevented from generating on other memory units when operation is carried out on a selected memory unit.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a memory array designed for electrically erasable programmable read-only memory and electronic equipment configured with the memory array. Background technique [0002] With the continuous development of storage technology, many types of memory have been developed, such as RAM (random access memory), DRAM (dynamic random access memory), ROM (read-only memory), EPROM (erasable programmable read-only memory), FLASH (flash memory), EEPROM (electrically erasable programmable read-only memory), etc. [0003] Electrically Erasable Programmable Read-Only Memory (EEPROM) is a memory chip that does not lose data after power failure. It can erase existing information on a computer or a special device and reprogram it, that is, Plug and play. [0004] The erasing of EEPROM does not require the help of other devices. It uses electronic signals to modify its content, getting rid o...

AI Technical Summary

Problems solved by technology

As the layout becomes smaller and smaller, it also brings disadvantages. For example, when operating on a selected memory cell, it is easy to cause misoperation to the surrounding memory cells.

In particular, when the memory cells share a word line WL and part of the bit line BL, it is easy to cause crosstalk to other memory cells that share a part with the selected memory cell.

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