OTP embedded memory and programming method and reading method thereof

A technology of embedded memory and programming method, applied in the field of memory, can solve the problems of shrinking, difficult memory cell size, etc., and achieve the effect of reducing the area, reducing the channel width, and reducing the channel length.

Active Publication Date: 2019-11-15
ZHUHAI CHUANGFEIXIN TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the present invention provides an OTP memory and its programming method and reading method to solve the problem that t

Method used

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  • OTP embedded memory and programming method and reading method thereof
  • OTP embedded memory and programming method and reading method thereof
  • OTP embedded memory and programming method and reading method thereof

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Embodiment Construction

[0059]As mentioned in the background technology section, the size of the traditional one-time programmable embedded memory cell (2TOTP cell) is difficult to shrink with the technology It continues to shrink as the platform advances.

[0060] The main reason that the inventor finds that the above-mentioned problem occurs is:

[0061] See figure 1 , figure 1 It is a structural schematic diagram of a double-tube shared word line one-time programmable embedded memory unit in the prior art; the double-tube shared word line OTP embedded memory unit includes a P well, a plurality of N+ regions located on one surface of the P well, Such as figure 1 As shown in , the left N+ region and the middle N+ region and the gate above the P well between the two N+ regions form a gate; the length between the left N+ region and the middle N+ region is the selection The channel length of the through pipe; the middle N+ region, the N+ region on the right and the gate above the P well between the...

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Abstract

The invention provides an OTP memory and a programming method and a reading method thereof. The OTP embedded memory comprises a plurality of word lines, a plurality of bit lines, and a plurality of programming lines; the programming lines are connected with the control end of the anti-fuse in each storage unit to provide a control voltage for the anti-fuse; a control voltage is provided for the control end of the gating tube by the word lines; therefore, the control voltage of the control end of the anti-fuse is separated from the control voltage of the control end of the gating tube, the control voltage of the gating tube is not limited by the control voltage of the anti-fuse, the control voltage of the gating tube can be further reduced, the channel length of the gating tube can be further reduced, and the area of a storage unit of the OTP embedded memory is reduced. Or, on the basis of not changing the channel length of the gating tube, the control voltage of the antifuse is independently controlled, the channel width of the gating tube can be relatively reduced, and the area of the storage unit of the OTP embedded memory can also be reduced.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to an OTP embedded memory, a programming method and a reading method thereof. Background technique [0002] The programming and reading methods of the one-time programmable (OTP, One Time Programmable) embedded memory will have a great impact on the performance of the one-time programmable embedded memory, and different setting methods will affect the performance of the one-time programmable embedded memory. Size, yield and reliability have different effects. [0003] System-on-Chip (SOC) designs have a huge demand for one-time programmable embedded memories. With the continuous improvement of the technology platform, the size of the traditional dual-transistor shared word line one-time programmable embedded memory cell (2T OTP cell) should continue to shrink with the advancement of the technology platform. [0004] However, in practice, the size of OTP embedded memory cells is dif...

Claims

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Application Information

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IPC IPC(8): G11C17/18G11C17/16
CPCG11C17/16G11C17/18
Inventor 李弦贾宬王志刚
Owner ZHUHAI CHUANGFEIXIN TECH CO LTD
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