Nanocrystal nonvolatile memory based on strained silicon and manufacturing method of memory

Abstract

The invention relates to a nanocrystal nonvolatile memory based on strained silicon in the technical fields of nano electronic components and nano processing. The nanocrystal nonvolatile memory based on strained silicon comprises a silicon substrate, a GeSi gradually-doped buffer layer, a Gel-xSix relieving layer, a strained silicon layer, lightly-doped drain electrodes, a source conduction region, a drain conduction region, a tunneling dielectric layer, a nanocrystal charge storage layer, a control grid dielectric layer and a grid electrode material layer, wherein the GeSi gradually-doped buffer layer, the Gel-xSix relieving layer and the strained silicon layer are deposited on the silicon substrate; the lightly-doped drain electrodes, the source conduction region and the drain conduction region are arranged at two sides in the silicon substrate; the tunneling dielectric layer covers a current carrier channel arranged between the source conduction region and the drain conduction region; the nanocrystal charge storage layer covers the tunneling dielectric layer; the control grid dielectric layer covers the tunneling dielectric layer; and the grid electrode material layer covers the control grid dielectric layer. According to the invention, the mobility is increased by utilizing the strained silicon, thereby increasing the reading current, and simplifying a peripheral circuit; the nanocrystal nonvolatile memory based on strained silicon adopts the nanocrystal as a floating grid material, so that the performance of a storage device is improved, and particularly, the storage performance, such as storage windows, programming/erasing speed, data retention characteristic and the like, is improved comprehensively.

Description

technical field [0001] The invention relates to the technical field of nanoelectronic devices and nanoprocessing, in particular to a strained silicon-based nanocrystalline non-volatile memory and a manufacturing method thereof. Background technique [0002] In recent years, the growth rate of memory in integrated circuits has exceeded that of logic circuits. The proportion of memory to chip area has increased from 20% in 1999 to 111% in 2005, while logic circuits have decreased from 66% in 1999 to 2005. 16%. Among memory products, the fastest growing market demand is non-volatile memory. As a typical device of non-volatile memory, flash memory (Flash Memory) has been widely used in various handheld mobile storage electronic products such as U disk, MP3 player and mobile phone. However, the flash memory device structure widely adopted by the industry is facing serious challenges in terms of storage time and power consumption while developing to nanometer feature size. [0...

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