Silicon based single electron transistor of wrap gate control construction and manufacturing method thereof

Abstract

The invention discloses a silicon single-electron transistor with an all-round gate control structure, comprising a silicon source electrode conduction step, a silicon drain electrode conduction step, a silicon nanometer conduction line and a quantum point contact structure, which are made on a SOI substrate from silicon on the top layer. The silicon source electrode conduction step and the silicon drain electrode conduction step are symmetrically arranged at the left and the right of the surface of an insulating layer and are connected through the silicon nanometer conduction line. The quantum point contact structure is arranged on the silicon nanometer conduction line, at the middle between the silicon source electrode conduction step and the silicon drain electrode conduction step. The invention further comprises a source ohmic metal electrode arranged on the silicon source electrode conduction step, a silicon drain ohmic metal electrode arranged on the silicon drain electrode conduction step, and an all-around-gate metal electrode which is arranged on the silicon nanometer conduction line, close to the quantum point contact structure and at one side of the silicon source electrode conduction step. The invention also discloses a method for fabricating such a silicon single-electron transistor with an all-round control structure. The silicon single-electron transistor is capable of steadily controlling single electron transport in batches.

Description

Technical field [0001] The invention relates to the technical field of single electron transport in nanoelectronics, in particular to a silicon-based single electron transistor with a gate control structure and a manufacturing method thereof. Background technique [0002] Nanoelectronics is one of the important fields of nanotechnology, and it is the continued development and extension of microelectronics to the microscopic field. At present, the feature size of very large scale integrated circuits has entered the nanoscale (<100nm) range. In the process of scaling down CMOS devices, the influence of quantum effects has become more and more prominent. The nano-solid structures produced by monoatomic layer thin film epitaxial growth technology, tunnel probe technology, and advanced lithography technology exhibit peculiar quantum effects. On the basis of these effects, people invented resonant tunneling devices and single-electron devices. , Quantum dot devices and other new qua...

AI Technical Summary

Problems solved by technology

The current planar nanofabrication technology is almost difficult to uniformly control the size and even the number of quantum dots of each silicon-based single-electron transistor with this precision, so the performance of the current silicon-based single-electron transistor is almost difficult to obtain good consistency and stability

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