LDMOS device and fabrication method thereof

Abstract

The invention discloses a laterally diffused metal oxide semiconductor (LDMOS) device; the LDMOS device comprises a source region, a gate region, a drain region, a body region, and a drifting region with doped type opposite to the body region; the body region is arranged on a substrate region, and the drifting region is arranged between the drain region and the body region. The LDMOS device also comprises an insulated dielectric layer, and the insulated dielectric layer is positioned on the drifting region and below the gate region. By using the structure of the LDMOS device provided by the invention, the puncture voltage of the device can be enhanced, so that the on-resistance is lowered and the power consumption of the device is reduced; and in the adjusting and fabricating process, junction depth for adjusting the insulated dielectric layer and the drifting region has smaller effect on the other devices.

Description

【Technical field】 [0001] The invention relates to an LDMOS device and a manufacturing method thereof. 【Background technique】 [0002] The lateral double diffused MOS transistor (LDMOS) is a lightly doped drain MOS device. Since LDMOS generally works in the linear region, its current remains basically unchanged, so the power consumption of LDMOS mainly depends on the size of the on-resistance. To increase the breakdown voltage, there is a drift region between the active and drain regions. The drift region in LDMOS is the key to the design of this type of device. The impurity concentration in the drift region is relatively low. Therefore, when the LDMOS is connected to a high voltage, the drift region can withstand a higher voltage due to its high resistance. [0003] At present, the traditional device structure uses a drift region made of a deep well to withstand the device withstand voltage. Due to the deep well depth, it is difficult to deplete the drift region, so the do...

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Problems solved by technology

[0004] In view of this, it is necessary to provide an LDMOS device with a higher breakdown voltage and a lower on-resistance in view of the problem that the LDMOS device withstands the withstand voltage by reducing the doping concentration of the drift region, resulting in a larger on-resistance.

[0005] In addition, it is also necessary to provide an LDMOS device with a higher breakdown voltage and a lower on-resistance in view of the problem that the LDMOS device withstands a withstand voltage by reducing the doping concentration of the drift region, resulting in a larger on-resistance. Manufacturing method

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