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189results about How to "Long storage" patented technology
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System and method for computer vision driven applications within an environment
ActiveUS20170323376A1Easy maintenanceConfidenceCharacter and pattern recognitionClosed circuit television systemsSystem integrationState dependent
A system and method for computer vision driven applications in an environment that can include collecting image data across an environment; maintaining an environmental object graph from the image data whereby maintaining the environmental object graph is an iterative process that includes: classifying objects, tracking object locations, detecting interaction events, instantiating object associations in the environmental object graph, and updating the environmental object graph by propagating change in at least one object instance across object associations; and inspecting object state for at least one object instance in the environmental object graph and executing an action associated with the object state. The system and method can be applied to automatic checkout, inventory management, and / or other system integrations.
Owner:GRABANGO CO
Biosensor and method for producing the same
InactiveUSRE36991E1The way is simple and fastImprove accuracyImmobilised enzymesBioreactor/fermenter combinationsReaction layerEnzyme
A biosensor for rapid quantification of a specific component contained in various biological samples with high accuracy has an electrically insulating base, an electrode system including a working electrode and a counter electrode formed on one face of the insulating base, and a reaction layer formed on the insulating base in close contact with the electrode system. The reaction layer contains at least a hydrophilic polymer, a buffer and an enzyme which is separated from the buffer.
Owner:PANASONIC HEALTHCARE HLDG CO LTD
Semiconductor device
ActiveUS20110156027A1Long storageReduce power consumptionTransistorSolid-state devicesSemiconductor materialsEngineering
An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS20110122670A1Limitation number of operationEasily multivalued informationTransistorSemiconductor/solid-state device detailsHemt circuitsSemiconductor
An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving / reading methods are explained in details in the description.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS20110157961A1Reduce power consumptionFrequency of refresh can be lowTransistorSolid-state devicesPower semiconductor deviceDriver circuit
The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.
Owner:SEMICON ENERGY LAB CO LTD
Oxide-based thin-film transistor (TFT) semiconductor memory device having source/drain electrode of one transistor connected to gate electrode of the other
InactiveUS8860108B2Reduce power consumptionReduce frequencyTransistorSolid-state devicesMemory effectPower flow
It is an object to provide a semiconductor having a novel structure. In the semiconductor device, a plurality of memory elements are connected in series and each of the plurality of memory elements includes first to third transistors thus forming a memory circuit. A source or a drain of a first transistor which includes an oxide semiconductor layer is in electrical contact with a gate of one of a second and a third transistor. The extremely low off current of a first transistor containing the oxide semiconductor layer allows storing, for long periods of time, electrical charges in the gate electrode of one of the second and the third transistor, whereby a substantially permanent memory effect can be obtained. The second and the third transistors which do not contain an oxide semiconductor layer allow high-speed operations when using the memory circuit.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS8455868B2Small currentLong storageTransistorSolid-state devicesElectricityPower semiconductor device
An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
InactiveUS20110156028A1Small currentLong storageTransistorSolid-state devicesPower semiconductor deviceDriver circuit
The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS8339828B2Limitation number of operationEasily multivalued informationTransistorSemiconductor/solid-state device detailsPower semiconductor deviceSemiconductor
An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving / reading methods are explained in details in the description.
Owner:SEMICON ENERGY LAB CO LTD
Optical recording medium
InactiveUS20040157158A1High sensitivityReduce reproductionMechanical record carriersPhotomechanical apparatusRecording layerOptical recording
An optical recording medium includes a substrate and a recording layer in which data can be recorded by projecting a laser beam thereonto, the recording layer including a first recording film containing an element selected from the group consisting of Si, Ge, Sn, Mg, In, Zn, Bi and Al as a primary component and a second recording film containing Cu as a primary component and 10 to 30 atomic % of Al as an additive. The thus constituted optical recording medium has an excellent initial recording characteristic and can store recorded data in a good condition over the long term.
Owner:TDK CORPARATION
Semiconductor device and manufacturing method thereof
ActiveUS20120161132A1Sufficient reduction in off-state currentHigh dielectric constantTransistorSolid-state devicesEngineeringData storing
An object is to provide a novel semiconductor device which can store data even when power is not supplied in a data storing time and which does not have a limitation on the number of writing operations. The semiconductor device includes a transistor and a capacitor. The transistor includes a first oxide semiconductor layer, a source electrode and a drain electrode which are in contact with the first oxide semiconductor layer, a gate electrode overlapping with the first oxide semiconductor layer, and a gate insulating layer between the first oxide semiconductor layer and the gate electrode. The capacitor includes the source electrode or the drain electrode, a second oxide semiconductor layer in contact with the source electrode or the drain electrode, and a capacitor electrode in contact with the second oxide semiconductor layer.
Owner:SEMICON ENERGY LAB CO LTD
Optical information recording medium
ActiveUS7166347B2Reduce noise levelImprove carrier-to-noise ratioLayered productsRecord information storageNoise levelRecording layer
An optical information recording medium which makes it possible to reduce the noise level, improve the C / N ratio and store record data for a long time period. An optical information recording medium has a recording layer formed on a substrate, for having a laser beam irradiated thereto for recording and reproduction of record data. The recording layer includes a first sub-recording film and a second sub-recording film. The first sub-recording film is formed of a first material containing Si as the main component. The second sub-recording film is formed of a second material containing Al as the main component and having Cu added thereto, and disposed in the vicinity of the first recording film. The laser beam is irradiated to the recording layer via a light transmitting layer formed in a manner covering the recording layer side.
Owner:TDK CORPARATION
Optical information recording medium
InactiveUS20050047302A1Reduce noise levelImprove carrier-to-noise ratioCombination recordingMechanical record carriersNoise levelRecording layer
An optical information recording medium which makes it possible to reduce the noise level, improve the C / N ratio and store record data for a long time period. An optical information recording medium has a recording layer formed on a substrate, for having a laser beam irradiated thereto for recording and reproduction of record data. The recording layer includes a first sub-recording film and a second sub-recording film. The first sub-recording film is formed of a first material containing Si as the main component. The second sub-recording film is formed of a second material containing Al as the main component and having Au added thereto, and disposed in the vicinity of the first recording film. The laser beam is irradiated to the recording layer via a light transmitting layer formed in a manner covering the recording layer side.
Owner:TDK CORPARATION
Cassette for storage of medical instruments
InactiveUS20100065456A1Avoid adhesionSimplify cleaning procedureSurgical furnitureDispensing apparatusEngineeringWelding
Cassette (10a) for a medical instrument (28) having at least one tray (14a) and a cover (12a) where the tray (14a) includes a rigid basic structure (23a, 23b, 23c) and fixed thereon a holding means (24a) for holding the medical instrument (28). The holding means (24a) has a cutout (26a) for retaining the medical instrument (28) and is attached to the rigid basic structure (23a) in a gap-free manner by molding, welding or gluing.
Owner:STRAUMANN HLDG AG
Optical information recording medium
ActiveUS20050018592A1Reduce noise levelImprove carrier-to-noise ratioCombination recordingMechanical record carriersNoise levelRecording layer
An optical information recording medium which makes it possible to reduce the noise level and improve the C / N ratio and store record data for a long time period. An optical information recording medium has a recording layer formed on a substrate, for having a laser beam irradiated thereto for recording and reproduction of record data. The recording layer includes a first sub-recording film and a second sub-recording film. The first sub-recording film is formed of a first material containing Si as a main component. The second sub-recording film is formed of a second material containing Al as a main component and having Mg added thereto, and disposed in the vicinity of the first recording film. The laser beam is irradiated to the recording layer via a light transmitting layer formed in a manner covering the recording layer.
Owner:TDK CORPARATION
Semiconductor device
InactiveUS20110121286A1Reduce power consumptionImprove reliabilityTransistorSolid-state devicesOxide semiconductorSignal lines
It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes memory cells connected to each other in series and a capacitor. One of the memory cells includes a first transistor connected to a bit line and a source line, a second transistor connected to a signal line and a word line, and a capacitor connected to the word line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor, one of a source electrode and a drain electrode of the second transistor, and one electrode of the capacitor are connected to one another.
Owner:SEMICON ENERGY LAB CO LTD
Optical information recording medium
ActiveUS20050048249A1Reduce noise levelImprove carrier-to-noise ratioLayered productsRecord information storageNoise levelRecording layer
An optical information recording medium which makes it possible to reduce the noise level, improve the C / N ratio and store record data for a long time period. An optical information recording medium has a recording layer formed on a substrate, for having a laser beam irradiated thereto for recording and reproduction of record data. The recording layer includes a first sub-recording film and a second sub-recording film. The first sub-recording film is formed of a first material containing Si as the main component. The second sub-recording film is formed of a second material containing Al as the main component and having Cu added thereto, and disposed in the vicinity of the first recording film. The laser beam is irradiated to the recording layer via a light transmitting layer formed in a manner covering the recording layer side.
Owner:TDK CORPARATION
Method for producing reagent for antibody detection and use thereof
ActiveUS20150064801A1Efficiently solubilizeEffective recoveryTumor rejection antigen precursorsCell receptors/surface-antigens/surface-determinantsProtein moleculesAntigenic protein
The present invention provides the following: a method for efficiently producing a reagent for detecting an antibody that specifically binds with an insoluble antigen protein present in a liquid sample; a reagent for antibody detection produced by the production method; and a use of the antibody. In a step for solubilizing an antigen protein, it is possible to efficiently solubilize and recover the antigen protein by using a cationizing agent; therefore, when compared to conventional methods, it is possible to efficiently produce a reagent for detecting an antibody that has bound to multiple antigen protein molecules in a carrier.
Owner:FUTAMI JUNICHIRO +1
Method of making plate-like frozen raw hamburger-like matter packaged by film
InactiveUS6254911B1Avoid quality changesGive durabilityWrappersConfectioneryMeat burgerMechanical engineering
A method of making a plate-like frozen raw hamburger-like matter includes: a filling step for filling a constitutional material of the raw hamburger-like matter between a first thermal seal a second thermal seal, provided in a direction perpendicular to the conveying direction; a deaerating step of pressing the film so that the filled constitutional material is extended until the second thermal seal is provided; a forming step for forming the plate-like raw hamburger-like matter by equalizing the constitutional matter, therein; and a freezing step for maintaining its shape by rapidly freezing the package bag enclosing the raw hamburger-like matter.
Owner:TERU
Semiconductor device
InactiveUS20130292671A1Reduce power consumptionReduce frequencyTransistorSolid-state devicesMemory effectEngineering
It is an object to provide a semiconductor having a novel structure. In the semiconductor device, a plurality of memory elements are connected in series and each of the plurality of memory elements includes first to third transistors thus forming a memory circuit. A source or a drain of a first transistor which includes an oxide semiconductor layer is in electrical contact with a gate of one of a second and a third transistor. The extremely low off current of a first transistor containing the oxide semiconductor layer allows storing, for long periods of time, electrical charges in the gate electrode of one of the second and the third transistor, whereby a substantially permanent memory effect can be obtained. The second and the third transistors which do not contain an oxide semiconductor layer allow high-speed operations when using the memory circuit.
Owner:YAMAZAKI SHUNPEI +2
Hairstyling gels with light protective action for skin and hair
InactiveUS20060013785A1Improve stabilityLong storageCosmetic preparationsHair cosmeticsHair ColorsPhotochemistry
Owner:WELLA AG
Optical information recording medium
ActiveUS7160597B2Reduce noise levelImprove carrier-to-noise ratioCombination recordingLayered productsNoise levelRecording layer
An optical information recording medium which makes it possible to reduce the noise level and improve the C / N ratio and store record data for a long time period. An optical information recording medium has a recording layer formed on a substrate, for having a laser beam irradiated thereto for recording and reproduction of record data. The recording layer includes a first sub-recording film and a second sub-recording film. The first sub-recording film is formed of a first material containing Si as a main component. The second sub-recording film is formed of a second material containing Al as a main component and having Mg added thereto, and disposed in the vicinity of the first recording film. The laser beam is irradiated to the recording layer via a light transmitting layer formed in a manner covering the recording layer.
Owner:TDK CORPARATION
Systems and methods for online garden design
InactiveUS20090216661A1Simple and fast discoveryHigh nutritional valueSeed and root treatmentPlant phenotype modificationFlower gardenComputer science
A method and system for improving the way fruit, vegetable and flower gardens are planned, designed, and implemented. The present application discloses systems and methods to simplify gardening, as well as improve the overall yield while mitigating such problems as over-planting, over / under irrigating, and poor maintenance. Systems and methods are described for an application utilizing a database to provide an interactive garden design, planning and implementation process.
Owner:WARNER SCOTT J
Semiconductor device
InactiveUS8559220B2Reduce power consumptionReduce frequencySolid-state devicesRead-only memoriesSemiconductor materialsEngineering
The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is formed on or in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
Owner:SEMICON ENERGY LAB CO LTD
Animal feeder
InactiveUS20070028844A1Efficient feedingControl eating intervalAnimal feeding devicesPisciculture and aquariaEngineeringFodder
An animal feeder for supplying a feed to an animal of choice for feeding the animal of choice in an unprotected environment such as the outdoors. The feeder comprising a base for support the feeder on a ground surface, a support frame extending upwardly from the base and a hopper supported by the frame. The hopper having a storage reservoir for storing a supply of feed with a feed entry opening that is closeable to prevent exposure to the outdoors. The hopper further including a feed chute below the reservoir having an upper region sealingly joined to the reservoir and a lower region below the upper region that is sealingly joined to a feeding chamber. The feeding chamber having a bottom surface wherein the feed supply can move from the reservoir into the feeding chamber and rest on the bottom surface based on gravity alone. The hopper further including a horizontally extending elongated channel extending from the feeding chamber with an outer end having a feeding opening open to the outdoors wherein the feeding chamber is spaced from the opening and the feed substantially remains within the hopper and spaced from the outdoors until it is consumed by the animal of choice.
Owner:FREY HENRY H
Optical information recording medium
ActiveUS7167440B2Reduce noise levelImprove carrier-to-noise ratioCombination recordingLayered productsNoise levelRecording layer
An optical information recording medium which makes it possible to reduce the noise level, improve the C / N ratio and store record data for a long time period. An optical information recording medium has a recording layer formed on a substrate, for having a laser beam irradiated thereto for recording and reproduction of record data. The recording layer includes a first sub-recording film and a second sub-recording film. The first sub-recording film is formed of a first material containing Si as the main component. The second sub-recording film is formed of a second material containing Al as the main component and having Ti added thereto, and disposed in the vicinity of the first recording film. The laser beam is irradiated to the recording layer via a light transmitting layer formed in a manner covering the recording layer side.
Owner:TDK CORPARATION
Stable no-delivering compounds
Disclosed are novel NO-releasing compounds which comprise a stabilized S-nitrosyl group and a free alcohol or a free thiol group. Also disclosed is a method of preparing the NO-releasing compounds. The method comprises reacting a polythiol or a thioalcohol with a nitrosylating agent. Also disclosed are medical devices coated with the disclosed compounds, methods of delivering NO to treatments sites in a subject by utilizing the medical devices and methods of sterilizing surfaces.
Owner:DUKE UNIV
System and method for producing par-baked pizza crusts
InactiveUS6843167B1Reduces final cooking timeFast deliveryFood preservationMeat processingBiomedical engineering
A system for producing par-baked pizza crusts from dough portions includes a pan adapted to support the dough portions. A lid assembly is positioned to contact each dough portion. The dough portions are par-baked in an oven, while the lid assembly contacts the dough portions, in order to produce par-baked pizza crusts.
Owner:PIZZA HUT LLC
Semiconductor device
ActiveUS8482001B2Small currentLong storageTransistorSolid-state devicesPower semiconductor deviceElectricity
An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.
Owner:SEMICON ENERGY LAB CO LTD
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