The invention belongs to the technical field of power semiconductors, and relates to an LIGBT device with an integrated NMOS transistor. The device is mainly characterized in that an N+ collector region is introduced near a P+ collector region, an NMOS transistor is integrated above the collector region, the MOS transistor is isolated from the collector region below through a layer of an insulating medium, one end of the MOS transistor is in P+ short connection with a collector electrode, and the other end of the MOS transistor is in N+ short connection with the collector electrode through a conductive material. When the new device is in reverse conduction, the integrated NMOS transistor provides a path for current, so the new device has better reverse recovery characteristics. During forward conduction, threshold voltage is increased by increasing the concentration of a P-type channel region in the integrated NMOS transistor, and the punch-through of the MOS transistor is prevented, so the snapback effect can be effectively inhibited. When the device is turned off, the integrated NMOS transistor provides a path for electron extraction, so the new device has shorter turn-off time and lower turn-off loss. The LIGBT device provided by the invention has the advantages that a reverse conduction function can be achieved and the turn-off loss is lower compared with a traditional LIGBT device.