Snapback transient voltage suppressor

Abstract

The invention discloses a snapback transient voltage suppressor, and belongs to the field of semiconductor protection devices. The suppressor comprises: an epitaxial layer formed on a substrate; a plurality of preset regions formed in the epitaxial layer and isolated by an isolation structures, wherein the first preset region and the fifth preset region comprise a first P+ region, a first N+ region and a second P+ region, the second preset region and the fourth preset region comprise a second N+ region, a third P+ region and a third N+ region, and the third preset region comprises a first P-type well region, a second P-type well region, a fourth N+ region formed in the second P-type well region, and two fourth P+ regions and two fifth N+ regions formed in the first P-type well region; a dielectric layer formed on the upper surface of the epitaxial layer, wherein the dielectric layer comprises metal holes corresponding to the P+ regions and the N+ regions; and a plurality of metal layers formed in each of the metal holes. The suppressor has the beneficial effects that the breakdown voltage and the trigger voltage are lower, the protection response is faster, the on resistance and the clamping voltage are smaller, and the protection capability for a post-stage integrated circuit is stronger.

Description

technical field [0001] The invention relates to the field of semiconductor protection devices, in particular to the field of design and manufacture of protection devices for high-speed signal ports, and in particular to a low-capacitance small snapback transient voltage suppressor. Background technique [0002] Transient Voltage Suppressor (TVS) is a high-efficiency clamp overvoltage protection device in the form of a diode. When the two poles of the TVS diode are impacted by reverse transient high energy, it can change the high impedance between its two poles to low impedance at a speed of 10 minus 12 seconds, absorbing surge power up to several thousand watts , so that the voltage between the two poles is clamped at a predetermined value, and the predetermined value is at a relatively low voltage level, so that the post-stage integrated circuit is protected from the impact of electrostatic discharge or surge voltage, and effectively protects the precision components in the...

AI Technical Summary

Problems solved by technology

[0004] At present, integrated circuits continue to develop in the direction of low voltage, low power consumption, and high-speed transmission, and higher performance requirements are put forward for corresponding TVS protection devices. It is required that the clamping voltage of TVS protection devices should be as low as possible, and that The capacitance should be as small as possible. It is usually used in high-speed ports such as HDMI3.0 / 3.1 and USB3.1. The capacitance requirement is less than 0.5pF. Larger capacitance will cause abnormalities such as packet loss during transmission of high-frequency signals.

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