The invention discloses a simulated measurement method of current characteristics of an
insulated gate bipolar transistor. The simulated measurement method of the current characteristics of the
insulated gate bipolar transistor includes the following steps of: step 10, obtaining test conduction characteristic and output characteristic of the
insulated gate bipolar transistor, step 20, establishing a simulated circuit of an internal integrated model of an simulated program, step 30, establishing a corresponding relationship between an actual collector
voltage and a corrected collector
voltage, step 40, obtaining correction factors of the actual collector
voltage and the corrected collector voltage, step 50, stimulatingly establishing a first-time corrected actual conduction characteristic, step 60, establishing a corresponding relationship between an actual
grid voltage and a corrected
grid voltage, step 70, obtaining correction factors of the actual
grid voltage and the corrected grid voltage, and step 80, stimulatingly establishing a second-time corrected actual output characteristic. The simulated measurement method of the current characteristics of the insulated gate bipolar
transistor solves the problem that current characteristics of insulated gate bipolar
transistor integrated inside of a
simulation program with intergraded circuit emphasis (PSPICE) are low
in degree of accuracy.