87 results about "Transistor model" patented technology

A method is provided for manufacturing, the method comprising processing a workpiece, measuring a parameter characteristic of the processing, and forming an output signal corresponding to the characteristic parameter measured by using the characteristic parameter measured as an input to a transistor model. The method also comprises predicting a wafer electrical test (WET) resulting value based on the output signal, detecting faulty processing based on the predicted WET resulting value, and correcting the faulty processing.

From the data of diffusion-length-dependent parameters extracted from the parameters of the transistor model of MOS transistors and from the parameters of transistors having various diffusion lengths, a diffusion-length-dependent parameter correcting unit creates approximate expressions of the diffusion length dependence of these parameters, and calculates parameter correction values to be used instead of original parameter values by using the created approximate expressions. Hence, the correction values can be used easily instead of the original parameter values, whereby a transistor model of MOS transistors having a different diffusion length DL can be created easily. Circuit simulation in consideration of the diffusion length dependence of the drain currents of MOS transistors can thus be carried out, whereby highly accurate simulation can be attained.

The invention discloses a simulated measurement method of current characteristics of an insulated gate bipolar transistor. The simulated measurement method of the current characteristics of the insulated gate bipolar transistor includes the following steps of: step 10, obtaining test conduction characteristic and output characteristic of the insulated gate bipolar transistor, step 20, establishing a simulated circuit of an internal integrated model of an simulated program, step 30, establishing a corresponding relationship between an actual collector voltage and a corrected collector voltage, step 40, obtaining correction factors of the actual collector voltage and the corrected collector voltage, step 50, stimulatingly establishing a first-time corrected actual conduction characteristic, step 60, establishing a corresponding relationship between an actual grid voltage and a corrected grid voltage, step 70, obtaining correction factors of the actual grid voltage and the corrected grid voltage, and step 80, stimulatingly establishing a second-time corrected actual output characteristic. The simulated measurement method of the current characteristics of the insulated gate bipolar transistor solves the problem that current characteristics of insulated gate bipolar transistor integrated inside of a simulation program with intergraded circuit emphasis (PSPICE) are low in degree of accuracy.

The invention discloses a modeling method of a SPICE model of a bipolar junction transistor, which comprises the steps that: firstly, the model parameter of a BJT transistor with emitter dimensioning is extracted and determined as initial model parameter, then based on the extracted model parameter, the parameter which has greater dependency on the emitter geometric dimensioning is adjusted according to the proportional relation of the emitter geometric dimensioning, and the adjusted new model parameter value is directly taken as the initial value of a transistor model to be molded with corresponding size, while the parameter which is unrelated with the emitter geometric dimensioning is directly taken as the initial value of the transistor model to be molded. According to the method provided by the invention, the SPICE model of the BJT transistor which has better fitness of the result of emulation and test and various sizes can be obtained in a short time.

A circuit simulation method includes: generating graphical data indicating dimensions of a subject MOS transistor; calculating a parameter correction amount based on said graphical data; correcting a given transistor model parameter in response to said parameter correction amount; and performing circuit simulation of a circuit that includes said subject MOS transistor by using said corrected transistor model parameter. The parameter correction amount is calculated based on said graphical data by using arithmetic equations. The arithmetic equations include at least one stress model equation expressing a stress exerted on a channel region of a model MOS transistor. The stress model equation is suitably defined to simulate the stress exerted on the channel region.

A transistor model for a simulator simulates a resistance between a source region and a drain region with a model equation which has terms representing resistance values corresponding respectively to areas of mutually different impurity concentrations below a gate section in simulating characteristics of a transistor. At least two of the terms each having a threshold parameter indicating a voltage at which a semiconductor element composed of the associated region and regions adjacent to that region changes from an ON state to an OFF state. The threshold parameters of the terms being specified independently from each other. Thus, the characteristics of a transistor having a set of areas of mutually different impurity concentrations below a gate section, inclusive of subthreshold regions which are difficult to evaluate through actual measurement, can be simulated to high accuracy while preserving a good fit with a capacitance model.

The invention belongs to the field of modeling of microwave circuits and devices, and provides a neural network space mapping modeling method for a power transistor. According to the method, a direct current signal and an alternating current signal in an input/output signal of a power transistor model are separately processed, an output mapping network is used to adjust the direct current characteristic of the power transistor model, and an input mapping network is used to adjust the alternating current characteristic of the power transistor model. The method inherits the advantages of the conventional neural network space mapping method, the mutual interference of the parameters on the model performance is reduced, the repeated adjustment and optimization of the parameters is avoided, and the modelling period is shortened.

The invention relates to a method for modeling a field effect transistor and a circuit simulation method. The method for modeling the field effect transistor comprises the following steps: calling gate voltage recorded by the selected field effect transistor and the corresponding drain current thereof to obtain relation for change of the drain current of the field effect transistor with the gate voltage; acquiring the relation for the change of first equivalent drain current of the transistor structure with the gate voltage and the relation for change of second equivalent drain current of a shallow trench isolating structure with the gate voltage based on the relation for the change of the drain current of the field effect transistor with the gate voltage; establishing a field effect transistor model according to the relation for the change of the first equivalent drain current of the transistor structure with the gate voltage and the relation for the change of the second equivalent drain current of the shallow trench isolating structure with the gate voltage. The accurate field effect transistor model can be established to improve the precision of circuit simulation.

The present invention discloses a method for building an MOS transistor model enclosing statistical variation of noise, including: measuring noise in MOS transistors from different dies; creating a noise distribution diagram in accordance with the obtained noise data of the MOS transistors; adding a variation of noise parameter in at least one noise model file into a library file of MOS transistor to simulate noise in MOS transistors; if a simulation result does not cover the noise data in the noise distribution diagram, changing the variation of the noise parameter until the simulation result covers the noise data in the noise distribution diagram; if the simulation result covers the noise data in the noise distribution diagram, adding corresponding variation of the noise parameter into the library file of MOS transistor as the MOS transistor model enclosing statistical variation of noise. The model obtained by the present invention is more precise.

The invention discloses a method for obtaining coplane-type thin film transistor contact resistance. The method comprises the steps that a transmission line resistance network model is built between a channel region, a source electrode or a drain electrode of a coplane-type thin film transistor; in the transmission line resistance network model, the transmission line resistance network is divided into two segments, the upper portion of the source electrode or the upper portion of the drain electrode is used as the first segment, and the side edge of the source electrode or the side edge of the drain electrode is used as the second segment; the equivalent resistance of the first segment of the transmission line resistance network is calculated and used as the boundary condition of the second segment of the transmission line resistance network, and then the total equivalent resistance of the two segments of the transmission line resistance network is calculated and used as the contact resistance between the source electrode or the drain electrode and the channel region of the coplane-type thin film transistor. By utilizing the method, the contact resistance of the coplane-type thin film transistor can be obtained through precise fitting calculation, and the method is suitable for modeling research of the thin film transistor. The method is reasonable in theory, accurate in result, easy to implement and beneficial to building the complete thin film transistor model.

A system and method for determining transistor model parameters that account for layout-dependent features in the transistor being modeled, and also in neighboring devices in the same integrated circuit. A computer-readable expression of the integrated circuit layout is retrieved, and active and gate layers in that expression extracted. For a transistor being modeled, its active regions are analyzed to determine whether these regions have a complex shape. Model parameters are derived based on volume effects of the complex shaped active regions. Neighboring active regions that affect parameters of the transistor being modeled are also identified and their effective depth determined. Strain effects due to complex shaped active regions and neighboring elements are thus included in the transistor model.

The invention discloses a transistor model capable of describing high temperature and low temperature mismatching characteristics and a simulation method. The changing trends, along with temperature, of the transistor mismatching characteristics are analyzed on a plurality of temperature conditions respectively, a threshold voltage parameter and a migration rate parameter are selected, extra temperature correction formulas and extra temperature correction coefficients are added respectively on the basis of original correction formulas in a mismatching macro-model, fitting is conducted on the correction coefficients by the utilization of the mismatching trends, along with high and low temperature changes, of the transistor so as to enable the mismatching model to be capable of well reflecting the electrical characteristic mismatching characteristics, and high-quality reference is provided for a circuit designer.

The invention discloses a grid resistor test structure for a metal-oxide-semiconductor (MOS) transistor. The test structure includes m groups of MOS transistors; each group of the MOS transistors comprises n MOS transistors with various channel widths, wherein the MOS transistors in the same group have the identical channel length and different groups of MOS transistors have different channel lengths; and all the MOS transistors have the same type. According to the grid resistor test structure of MOS transistors, all coefficients in a resistance element Rg functional expression in an MOS transistor model can be visually obtained with consideration of the influence of a grid resistor on MOS transistor characteristics.

According to one exemplary embodiment, a method for adjusting a transistor model for increased circuit simulation accuracy includes determining a first gate CD offset by matching a C-V test structure having a normalized channel current to an I-V test structure having the normalized channel current. The method further includes utilizing the first gate CD offset to adjust the transistor model for increased circuit simulation. The method also includes determining a second gate CD offset by varying I-V and C-V gate length parameters in the transistor model to cause simulated data from a test circuit to be approximately equal to measured data from the test circuit. The method further includes utilizing the second gate CD offset to adjust the transistor model.

A simulation method includes determining a relationship between stress time and a degradation rate of drain current on a basis of a table in which data of a lifetime of a transistor, or the degradation rate of the transistor, is written, and calculating an amount of change in drain current accordance with the degradation rate, using a table in which information indicating a change in the drain current, being dependent on voltage, is written, based on actually measured data of drain current of the transistor after degradation, drain current in an initial state of a particular transistor model, and the relationship between stress time and the degradation rate of drain current.

A method for evaluating the electric performances of an FDSOI transistor, including the steps of:

• • measuring the capacitance and/or the conductance of the FDSOI transistor, by applying a rear voltage V_BG>0 or V_BG<0 on the substrate of the transistor, depending on a front voltage V_FG applied on the gate of the transistor,
  • calculating the theoretical values of the capacitance and/or the conductance of a transistor modeled by an electric circuit equivalent to the FDSOI transistor, for different selected theoretical values of defect densities D_it1, D_it2 at the dielectric-semiconductor interfaces of the modeled transistor,
  • determining the real values of D_it1, D_it2 at the corresponding interfaces of the FDSOI transistor by a comparison between the measured values of the capacitance and/or the conductance of the FDSOI transistor and the calculated theoretical values of the capacitance and/or the conductance of the modeled transistor.

The invention relates to a field effect transistor model parameter correction method taking shallow trench isolation into account and belongs to the technical field of integrated circuit design. The method comprises the steps that a parasitic parameter extraction tool is adopted to extract STI (shallow trench isolation) structural parameters from an input layout; the stress in the trench of an MOSFET (metal-oxide-semiconductor field effect transistor), along the length direction and the width direction of the trench is calculated according to the STI structural parameters; and the MOSFET model parameter corrections are obtained through the stress calculation, including electron mobility correction, hole mobility correction, N-MOSFET threshold voltage correction and P-MOSFET threshold voltage correction, electron saturation speed correction and hole saturation speed correction. The field effect transistor model parameter correction method taking shallow trench isolation into account can improve the reliability of circuit simulation and increase the success rate of integrated circuit design.

The invention provides a neural network space mapping modeling method for packaged transistors. Building of accurate packaged transistor models is of vital importance on improving the precision of wireless communication system circuits. The neural network space mapping modeling method aims to overcome the shortcomings of requirements on internal structure information and high computational complexity of existing modeling methods for packaged transistors. The neural network space mapping modeling method for the packaged transistors includes dividing each packaged transistor model into an input packaged circuit module, a nonlinear circuit module and an output packaged circuit module; respectively constructing structures of the input packaged circuit modules, the nonlinear circuit modules and the output packaged circuit modules. The neural network space mapping modeling method has the advantages that characteristics of the packaged transistors can be accurately reflected by trained models, the neural network space mapping modeling method is high in simulation speed, the design cycle can be greatly shortened, and large-scale circuits can be possibly further designed.

A circuit simulation apparatus is provided with a parameter calculating tool and a circuit simulator. The parameter calculating tool is configured to extract gate spacings between gates of a target MOS transistor and adjacent MOS transistors integrated in an integrated circuit from layout data of the integrated circuit, and to calculate a transistor model parameter corresponding to a threshold voltage of the target MOS transistor based on the extracted gate spacings. The circuit simulator is configured to perform circuit simulation of the integrated circuit by using the calculated transistor model parameter.

A system and method for modeling a semiconductor transistor device structure having a conductive line feature of a designed length connected to a gate of a transistor device in a circuit to be modeled, the transistor including an active device (RX) area over which the gate is formed and over which the conductive line feature extends. The method includes providing an analytical model representation including a function for modeling a lithographic flare effect impacting the active device area width; and, from the modeling function, relating an effective change in active device area width (deltaW adder) as a function of a distance from a defined edge of the RX area. Then, transistor model parameter values in a transistor compact model for the device are updated to include deltaW adder values to be added to a built-in deltaW value. A netlist used in a simulation includes the deltaW adder values to more accurately describe the characteristics of the transistor device being modeled including modeling of lithographic corner rounding effect on transistor device parametrics.