Method for modeling SPICE model of bipolar junction transistor

Abstract

The invention discloses a modeling method of a SPICE model of a bipolar junction transistor, which comprises the steps that: firstly, the model parameter of a BJT transistor with emitter dimensioning is extracted and determined as initial model parameter, then based on the extracted model parameter, the parameter which has greater dependency on the emitter geometric dimensioning is adjusted according to the proportional relation of the emitter geometric dimensioning, and the adjusted new model parameter value is directly taken as the initial value of a transistor model to be molded with corresponding size, while the parameter which is unrelated with the emitter geometric dimensioning is directly taken as the initial value of the transistor model to be molded. According to the method provided by the invention, the SPICE model of the BJT transistor which has better fitness of the result of emulation and test and various sizes can be obtained in a short time.

Description

technical field [0001] The invention relates to a device modeling method, in particular to a method for establishing a bipolar junction transistor model. Background technique [0002] A bipolar junction transistor (Bipolar Junction Transistor, referred to as a BJT transistor) is an important semiconductor device in a semiconductor integrated circuit. SPICE (Simulation Program with Integrated Circuit Emphasis) is the most commonly used circuit-level simulation program in the device design industry. Various software manufacturers provide different versions of SPICE software such as Vspice, Hspice, and Pspice. The simulation cores of these software are similar, and they are all adopted. SPICE simulation algorithm developed by the University of California, Berkeley. In the process of extracting the BJT transistor SPICE model, it is generally necessary to model multiple BJT transistors with different emitter sizes. At present, the BJT transistor SPICE model generally recognized...

AI Technical Summary

Problems solved by technology

At present, modeling engineers generally extract model parameters independently for multiple BJT transistors with different emitter sizes. Although this method can eventually obtain a better fit between model simulation and test results, it destroys the The physical and geometric size dependence of parameters between BJT transistor models of different sizes, at the same time, the modeling efficiency of BJT transistors is also greatly affected