Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Building method and system for ferroelectric field effect transistor model

An electric field effect and transistor technology, applied in the field of ferroelectric field effect transistor model establishment, can solve the problems of ignoring polarization and maintaining spatial inhomogeneity of polarization, inability to give, and the microscopic nature of failure

Active Publication Date: 2017-12-01
XIANGTAN UNIV
View PDF8 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This model links the polarization properties of the ferroelectric thin film with the macroscopic electrical properties of the transistor, realizing the connection from the mesoscopic properties to the macroscopic properties, but it reflects the evolution of the average macroscopic polarization over time, ignoring the polarization and maintain spatial inhomogeneity
Therefore the microscopic nature of the failure cannot be given

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Building method and system for ferroelectric field effect transistor model
  • Building method and system for ferroelectric field effect transistor model
  • Building method and system for ferroelectric field effect transistor model

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0038] The invention is an effective way to reveal the action mechanism of the mesoscopic domain structure on the macro performance of the ferroelectric memory by establishing the phase field finite element model of the ferroelectric field effect transistor. With the reduction of the size of FeFET, the size effect becomes more and more significant. The strain in the ferroelectric thin film and the uneven spatial distribut...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a building method and system for a ferroelectric field effect transistor model, and belongs to the technical field of finite element modeling. The method comprises the steps of building a solid domain calculation model of a field effect transistor with a visible dielectric layer; building a phase field model of an electric domain of a ferroelectric film; and based on the phase field model, performing correction on the solid domain calculation model to obtain the ferroelectric field effect transistor model. Therefore, the electric domain evolution process of the dielectric layer under the action of an electric field can be accurately simulated and the domain structure and the domain switching condition of the dielectric layer can be observed; and moreover, the reflection of the macro-performance of the transistor and the potential distribution and carrier concentration distribution conditions under different domain structures can be simulated.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of ferroelectric memory, and in particular to a method and system for establishing a model of a ferroelectric field effect transistor. Background technique [0002] The integrated circuit industry is the core of the information technology industry, and it is a strategic, basic and leading industry that supports my country's economic and social development and guarantees national security. According to the statistics of the World Semiconductor Trade Statistics Organization (WSTS), memory occupies the first place in the composition of integrated circuit products. As the size of semiconductor devices becomes smaller and smaller, the storage technology based on charge storage is getting closer and closer to the physical limit of size reduction, and the semiconductor process will also be getting closer and closer to the limit. The new storage technology beyond Moore's Law will be the develop...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/367
Inventor 蒋丽梅周芊骞徐肖飞明浩廖敏杨琼彭强祥周益春
Owner XIANGTAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products