Building method and system for ferroelectric field effect transistor model
An electric field effect and transistor technology, applied in the field of ferroelectric field effect transistor model establishment, can solve the problems of ignoring polarization and maintaining spatial inhomogeneity of polarization, inability to give, and the microscopic nature of failure
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.
[0038] The invention is an effective way to reveal the action mechanism of the mesoscopic domain structure on the macro performance of the ferroelectric memory by establishing the phase field finite element model of the ferroelectric field effect transistor. With the reduction of the size of FeFET, the size effect becomes more and more significant. The strain in the ferroelectric thin film and the uneven spatial distribut...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com