The invention relates to a method for simulating the influence of a heating technology on premelting and melting of crystal boundaries by the aid of a crystal phase-field process, and belongs to the field of technologies for simulating crystals. The method includes steps of (1), building a crystal phase-field model, in other words, building the crystal phase-field model on the basis of an idea of the traditional phase-field process, introducing a periodic function form into the model, and setting periodic partial-time average atomic densities as order parameters to obtain a free energy function expression of crystals; (2), determining a numerical process and calculation parameters. The method has the advantages that premelting and melting microstructure morphology at different heating rates is researched by the aid of a simulated calculation process and the crystal phase-field process, the widths of liquid-phase films at the crystal boundaries are quantitatively calculated by an excess mass process when the crystal boundaries are premelted and melted at the different heating rates, accordingly, the widths of the liquid-phase films at the crystal boundaries are quantified when the crystal boundaries are premelted and melted, structural relations among numerical values of the widths of the liquid-phase films and the atomic crystal boundary structures are illustrated, and an effect is perfect.