Polymorphic coexistence-based phase field analysis method for hafnium oxide-based ferroelectric film

A ferroelectric thin film, hafnium oxide technology, applied in design optimization/simulation, CAD numerical modeling, etc., can solve the problem of no longer applicable distribution and evolution, unable to obtain the relationship between spontaneous polarization and temperature of the base ferroelectric thin film, difficult to prepare Single crystal, etc.

Active Publication Date: 2020-03-06
XIANGTAN UNIV
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Problems solved by technology

[0005] Therefore, the phase field model established based on traditional ferroelectric thin films is no longer suitable for analyzing the distribution and evolution of ferroelectric domains in hafnium oxide-based ferroelectric thin films where ferroelectric phases and various non-ferroelectric phases coexist, so traditional phase field theory cannot be used. Model Analysis of the Microscopic Mechanism of Fatigue Failure of Hafnium Oxide-Based Ferroelectric Thin Films
[0006] In addition, in the current phase field method, the coefficient of the bulk energy is obtained by fitting the relationship between the spontaneous polarizatio

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  • Polymorphic coexistence-based phase field analysis method for hafnium oxide-based ferroelectric film
  • Polymorphic coexistence-based phase field analysis method for hafnium oxide-based ferroelectric film
  • Polymorphic coexistence-based phase field analysis method for hafnium oxide-based ferroelectric film

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[0077] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0078] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0079] figure 1 It is a flow chart of the steps of the phase field analysis method based on the multi-state coexistence of the hafnium oxide-based ferroelectric thin film provided by the present invention, figure 2 It is a flow chart of step S4 provided by the present invention.

[0080] In o...

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Abstract

The invention discloses a polymorphic coexistence-based phase field analysis method for a hafnium oxide-based ferroelectric film. The method comprises the following steps: determining the number of sequence parameters according to the number of states of the polymorphic coexisting hafnium oxide-based ferroelectric film; determining an energy equation expression and a coefficient of the ferroelectric film based on the sequence parameter, the Ginzburg-Landau theory and the block energy, the elastic energy, the gradient energy and the electrostatic energy of the ferroelectric film; in combinationwith a mechanical equilibrium equation, a Maxwell equation and a Ginzburg-Landau phase field kinetic equation, deducing weak forms of a force field, an electric field and a polarization field, and establishing a hafnium oxide-based ferroelectric film polymorphic coexistence phase field model under force-electricity coupling; and simulating a domain structure and an evolution rule of the polymorphic coexisting hafnium oxide-based ferroelectric film according to the phase field model. The formation and growth process of the domain structure of the HfO2-based ferroelectric film is dynamically simulated, the redistribution of the domain structure under the action of different external fields is researched, guidance is provided for experimenters, and the experiment cost is reduced.

Description

technical field [0001] The invention relates to the technical field of simulation analysis of ferroelectric thin films, in particular to a phase field analysis method based on multi-state coexistence of hafnium oxide-based ferroelectric thin films. Background technique [0002] In the 1T-1C type ferroelectric memory of the traditional perovskite ferroelectric film, the thickness of the ferroelectric film is relatively large, the area of ​​the memory unit is large, and the storage capacity is low, which is difficult to meet the application requirements. While hafnium oxide (Hf0 2 )-based ferroelectric thin film material is a new type of ferroelectric material with high dielectric constant, large coercive field and remanent polarization, which can be combined with advanced CMOS technology (Complementary Metal Oxide Semiconductor, that is, complementary metal oxide Compatible with material semiconductors; at the same time, when the film thickness is less than 10nm, it still ha...

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Application Information

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IPC IPC(8): G06F30/20G06F111/10
Inventor 蒋丽梅冯鑫陈强赖彬王渊曜邵宴萍周益春廖敏
Owner XIANGTAN UNIV
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