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Method and system for analyzing influence mechanism of dislocation on ferroelectric materialdomain structure

A ferroelectric material and domain structure technology, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve the problem of difficult to directly measure the influence mechanism of dislocation, and achieve the effect of simple simulation method

Active Publication Date: 2017-08-08
XIANGTAN UNIV
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Problems solved by technology

[0008] The purpose of the present invention is to provide a method and system for analyzing the mechanism of the influence of dislocations on the domain structure of ferroelectric materials. The present invention aims at the problems existing in the existing dislocation phase field model, and provides a simple and accurate simulation method. By analyzing The effect of dislocations in different Burgers vector directions on the domain structure changes of ferroelectric materials reveals the mechanism of dislocation effects that are difficult to directly measure in the prior art

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  • Method and system for analyzing influence mechanism of dislocation on ferroelectric materialdomain structure
  • Method and system for analyzing influence mechanism of dislocation on ferroelectric materialdomain structure
  • Method and system for analyzing influence mechanism of dislocation on ferroelectric materialdomain structure

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Embodiment 1

[0065] figure 1 It is a schematic flow chart of the analysis method for the mechanism of the influence of dislocations on the domain structure of ferroelectric materials provided by Embodiment 1 of the present invention.

[0066] Such as figure 1 As shown, the method for analyzing the influence mechanism of dislocations on the domain structure of ferroelectric materials provided by Embodiment 1 of the present invention includes:

[0067] Step S1, establishing a first piezoelectric effect calculation model including the piezoelectric effect. In this step, firstly, calculate the first free energy density of the geometric model of the phase field, calculate the partial derivatives of the displacement field, electric field and polarization field according to the first free energy density, and obtain the constitutive equations of the displacement field, electric field and polarization field , further, multiply the equilibrium equations of the displacement field, electric field an...

Embodiment 2

[0077] figure 2 It is a schematic flowchart of establishing a phase field geometric model including ferroelectric materials according to Embodiment 2 of the present invention.

[0078] Such as figure 2 As shown, on the basis of Embodiment 1 of the present invention, before step S1, it also includes: establishing a phase field geometric model including ferroelectric materials, which includes:

[0079] Step S01, obtaining the first coordinate position and Burgers vector direction of the dislocation in the ferroelectric material.

[0080] In this step, the first coordinate position of a certain dislocation (there may be multiple dislocations in the ferroelectric material) in the ferroelectric material and the Burgers vector direction of the dislocation are obtained. The first coordinate position is the coordinate position of the dislocation in the ferroelectric material, the Burgers vector is the direction of the dislocation in the ferroelectric material, and the determinatio...

Embodiment 3

[0097] image 3 is a schematic flowchart of step S1 provided according to Embodiment 3 of the present invention.

[0098] Such as image 3 As shown, on the basis of the first embodiment of the present invention, the step S1 provided in the third embodiment of the present invention further includes:

[0099] Step S11, summing the bulk free energy density, elastic strain energy density, coupling energy density of polarization and strain, gradient energy density and electrostatic energy density of the ferroelectric material to obtain the first free energy density h of the phase field geometric model.

[0100] Specifically, the first free energy density h is calculated according to the following formula:

[0101] h=f landau +f strain +f coup +f grad +f elec (1.1)

[0102] Among them, f landau Indicates the bulk free energy density, f strain Indicates the elastic strain energy density, f coup Indicates the coupling energy density of polarization and strain, f grad Indic...

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Abstract

An embodiment of the invention discloses a method and a system for analyzing an influence mechanism of dislocation on a ferroelectric materialdomain structure. The method comprises steps as follows: S1, establishing a first piezoelectric effectcalculation model with a piezoelectric effect; S2, establishing a second piezoelectric effectcalculation model with the dislocation on the basis of a stress-strain field caused by the dislocation in a ferroelectric material as well as the first piezoelectric effectcalculation model; S3, establishing a flexoelectric effect calculation model on the basis of the second piezoelectric effectcalculation model with the dislocation and a flexoelectric effectenergy densityequation; S4, generating a polarization vector diagram and / or a polarizationcloud chart on the basis of the second piezoelectric effectcalculation model with the dislocation and the flexoelectric effect calculation model. Compared with a traditional dislocation phase field model only taking the piezoelectric effect into consideration, the embodiment of the invention takes the flexoelectric effect into consideration, and a simulated result more matched with an experimental result is obtained.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric material simulation, and in particular relates to an analysis method and system for the mechanism of the influence of dislocations on the domain structure of ferroelectric materials. Background technique [0002] There are two main systems of traditional semiconductor memory: volatile memory and non-volatile ferroelectric memory. [0003] Non-volatile ferroelectric memory (FRAM) is a non-volatile ferroelectric read-write memory produced by Ramtron Corporation of the United States. Its core is ferroelectric crystal material, which makes ferroelectric storage products have the characteristics of random access memory (RAM) and non-volatile memory at the same time. Nonvolatile ferroelectric memory has wide application potential because of its many excellent characteristics, and is known as the most potential memory. However, nonvolatile ferroelectric memory has a series of failure problems to ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 蒋丽梅徐肖飞明浩廖敏杨琼彭强祥周益春
Owner XIANGTAN UNIV
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