Phase-field-model-based study method of using laser to control silicon substrate surface morphology

Abstract

The invention discloses a phase-field-model-based study method of using laser to control silicon substrate surface morphology. The method comprises the first step of adopting a silicon clamp to clamp a silicon substrate with a micro-nano structure under an atomic force microscope; the second step of using the laser to irradiate a suspending end of the silicon substrate for seconds, and observing the silicon substrate surface morphology of the silicon substrate and measuring the corresponding dimension; the third step of simulating a silicon atom diffusion behavior based on irradiation of the laser and the evolution process of the silicon substrate surface morphology of a nano structure under a phase-field model.

Description

technical field [0001] The invention belongs to the technical field of nano-manufacturing, and in particular relates to a research method for controlling the surface morphology of a silicon base by using a laser based on a phase field model. Background technique [0002] In recent years, various disciplines have been persistently trying various new science and technology to design and manufacture nanostructured silicon-based surface morphology, and apply it to various micro-mechanical devices, such as sensors and resonators. So far, the research on how to control the surface morphology of nanostructured silicon substrates is still blank. Researches at home and abroad simply describe the thermal diffusion movement of silicon atoms under the action of heat treatment, thus forming the surface morphology of silicon base. [0003] In recent years, scholars at home and abroad have devoted themselves to using mathematical models to analyze and design the surface morphology of nano...

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Problems solved by technology

[0003] In recent years, scholars at home and abroad have devoted themselves to using mathematical models to analyze and design the surface morphology of nanostructured silicon substrates. However, the early studies were based on one-dimensional and two-dimensional mathematical models, which have limitations in understanding the surface morphology of silicon substrates.

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