Method for obtaining coplane-type thin film transistor contact resistance

Abstract

The invention discloses a method for obtaining coplane-type thin film transistor contact resistance. The method comprises the steps that a transmission line resistance network model is built between a channel region, a source electrode or a drain electrode of a coplane-type thin film transistor; in the transmission line resistance network model, the transmission line resistance network is divided into two segments, the upper portion of the source electrode or the upper portion of the drain electrode is used as the first segment, and the side edge of the source electrode or the side edge of the drain electrode is used as the second segment; the equivalent resistance of the first segment of the transmission line resistance network is calculated and used as the boundary condition of the second segment of the transmission line resistance network, and then the total equivalent resistance of the two segments of the transmission line resistance network is calculated and used as the contact resistance between the source electrode or the drain electrode and the channel region of the coplane-type thin film transistor. By utilizing the method, the contact resistance of the coplane-type thin film transistor can be obtained through precise fitting calculation, and the method is suitable for modeling research of the thin film transistor. The method is reasonable in theory, accurate in result, easy to implement and beneficial to building the complete thin film transistor model.

Description

Technical field [0001] The invention belongs to the technical field of modeling and simulation of semiconductor electronic devices, and in particular relates to a method for obtaining contact resistance between source and drain electrodes of a coplanar thin film transistor and a channel region. Background technique [0002] Organic and oxide semiconductor devices have the advantages of flexibility, transparency, low cost, and large-area manufacturing, and have broad application prospects. After recent years of development, the theory of organic and oxide semiconductor devices has gradually matured, and device performance has been continuously improved. Low-end application products such as flexible, transparent, and printable radio frequency electronic tags have begun to appear abroad. Thin film transistors based on organic and oxide semiconductors are the core components in flexible and transparent electronic circuits. The performance of their devices is continuously improved, a...

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Problems solved by technology

Device experimenters have completed many measurements of the contact resistance of thin film transistors, but there is no complete device model to describe the contact resistance and its relationship with the device structure

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