Super-junction reverse conducting IGBT (Insulated Gate Bipolar Translator) with heterojunction

Abstract

The invention belongs to the technical field of power semiconductors, and particularly relates to a super-junction reverse conducting IGBT (Insulated Gate Bipolar Translator) with a heterojunction. The cell structure of the heterojunction super-junction reverse conducting IGBT comprises a collector electrode structure, a voltage-withstanding layer structure, a grid electrode structure and an emitting electrode structure, compared with a traditional structure, the collector electrode structure is firstly improved, an insulating medium is arranged in the middle of collector electrode metal, a collector electrode region is completely arranged below an N drift region, and the voltage-withstanding layer structure is arranged in the middle of the N drift region; meanwhile, a P drift region on the other side and a P well and a P contact region on the drift region are all made of silicon carbide, so that the snapback phenomenon of a traditional super-junction reverse conducting IGBT during forward conduction is eliminated, and reverse recovery charges can be effectively reduced.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, in particular to a superjunction reverse conduction IGBT (insulated gate bipolar transistor, Insulated Gate Bipolar Transistor, IGBT for short) with a heterojunction. Background technique [0002] Introducing a superjunction structure into the IGBT structure can improve its turn-off loss, and the trade-off relationship between the breakdown voltage and the specific on-resistance is also better than that of the traditional IGBT. The super-junction reverse conduction IGBT solves the problem that the traditional super-junction IGBT cannot conduct reverse conduction, so that freewheeling can be performed without external integrated freewheeling diodes in the system. The superjunction inverse conduction IGBT has a conversion from unipolar conduction to bipolar conduction during forward conduction, so there is a voltage rebound phenomenon, which is manifested as a snapback phenomenon of th...

AI Technical Summary

Problems solved by technology

The snapback phenomenon will bring about some reliability problems of reverse conduction IGBT devices, especially in the parallel application of reverse conduction IGBT devices, this phenomenon may cause some devices to fail to turn on normally, and some devices have too much current If the temperature is too high, it will be burned, which will lead to the failure of the whole system

Images