The invention discloses a manufacturing method for an N-shaped GaAs substrate laser diode. The manufacturing method comprises the steps that a GaAs substrate is formed, and an n-shaped coating layer, an n-shaped light guide layer, an active layer, a p-shaped barrier layer, a p-shaped light guide layer and a p-shaped coating layer are sequentially deposited. The forming method of the GaAs substrate comprises the steps that a GaAs wafer is placed in a high-temperature high-pressure device, the GaAs wafer is heated and pressurized, the heating temperature ranges from 860 DEG C to 890 DEG C, pressure ranging from 5.0 GPa to 5.5 GPa is exerted, and the GaAs wafer is heated and pressurized for 10 minutes to 15 minutes; heating and pressing are stopped, and the GaAs wafer returns to a normal temperature and pressure state; annealing is conducted for 20 minutes-30 minutes in the high-temperature high-pressure device, and the GaAs wafer is taken out. According to the method, crystal defect density of the substrate of the laser diode can be obviously reduced, performance of the laser diode is enhanced, and service life of the laser diode is prolonged.